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Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.


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Proceedings ArticleDOI
30 Sep 2008
TL;DR: In this article, the characteristics of temperature sensitive parameters for selected types of devices were determined by measurements within the range 25 - 150 degrees C. The measurement was done using short pulses, which are not able to change measured temperatures.
Abstract: In this paper, results of laboratory investigation of representative samples of semiconductor silicon and silicon carbide power devices, such as PiN diode, Shottky diode, IGBT and JFET, are presented. With use of a thermal chamber the characteristics of temperature sensitive parameters for selected types of devices were determined by measurements within the range 25 - 150degC. The measurement was done using short pulses, which are not able to change measured temperatures. The results have to enable identification of junction temperature in the case of other tests, especially those oriented on energy losses, efficiency, and thermal management.

20 citations

Journal ArticleDOI
TL;DR: In this article, the lifetime τ of non-equilibrium carriers steadily increases with temperature across the entire temperature interval and the rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd is virtually temperature independent.
Abstract: Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range T = 300–773 K Analysis of the forward current–voltage characteristics and reverse current recovery waveforms shows that the lifetime τ of non-equilibrium carriers steadily increases with temperature across the entire temperature interval The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd As a result, Rd is virtually temperature independent The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 162 eV The surface leakage current of packaged structures does not exceed 2 × 10−6 A at T = 773 K and a reverse bias of 300 V

20 citations

Proceedings ArticleDOI
01 Dec 2008
TL;DR: In this article, a forward-voltage based method was used to measure the junction temperature of high power LEDs and the experiment time was reduced from 3~4 hours to 10 minutes for one sample.
Abstract: In this paper the accurate and fast measurement equipment was developed and applied to study the thermal characteristics of high power LEDs. The forward-voltage based method was conducted to measure the junction temperature of high power LEDs. Conduction type method is adopted to measure the temperature sensitivity parameter (TSP) with small magnitude of error compared with the traditional method. The experiment time was reduced from 3~4 hours to 10 minutes for one sample. It was demonstrated that the repeatability of the measurement system was well after the repeatability test. LEDs used here were 5 W single chip LED and 50 W multi-chip LED with 36 chips inside the LED. Thermal resistance of junction-to-case as function of input power and case temperature was discussed. It was shown that the 5 W LED revealed an increasing trend of thermal resistance with the input power at each case temperature but the contrary trend of 5OW LED. The results also exhibited the dependency of thermal resistance and case temperature. With the increasing case temperature, the value of thermal resistance became higher under each input power. Three factors affected the thermal performance including: the first, the relation between light output efficiency and junction temperature; the second, the effect of internal series electrical resistance Rin and external electrical resistance Rex; and the third, the materials degeneration of each part inside the LEDs package as the junction temperature increased. To combine the three factors could explain the thermal characteristics of high power LEDs.

20 citations

Journal ArticleDOI
TL;DR: In this article, thermal analysis of high-power light-emitting diodes (LEDs) with various chip sizes, in the same chip-on-board (COB) package and with the same total chip size and input power.
Abstract: This paper demonstrates the thermal analysis of high-power light-emitting diodes (LEDs) with various chip sizes, in the same chip-on-board (COB) package and with the same total chip size and input power. The 4-, 9-, 25-, and 100-chip multichip COB LEDs with chip-side lengths of 1500, 1000, 600, and 300 $\mu $ m were used. The simulation results indicate that the maximal junction temperature of the multichip COB LEDs increased as the number of chips in the multichip COB LED decreased. In addition, with the same input power, the difference between the maximal and minimal junction temperatures of the multichip COB LED increased as the number of chips in multichip COB LEDs increased. That is, if the multichip COB LED contains a few number of large chips, the output power of each chip will drop but uniform owing to the high junction temperature and low temperature difference. Oppositely, if the multichip COB LED contains a lot of small chips, the output power of the chips at the corners will be higher than other chips, but the output power of each chip will be nonuniform owing to the nonuniform junction temperature distribution.

20 citations

Proceedings ArticleDOI
01 Oct 2017
TL;DR: In this paper, the reverse recovery behavior of a SiC MOSFET intrinsic/body diode and compares the diode's performance with similarly rated SiC Schottky diodes at different temperatures.
Abstract: This paper investigates the reverse recovery behaviour of a SiC MOSFET intrinsic/body diode and compares the diode's performance with similarly rated SiC Schottky diodes at different temperatures. A circuit level analytical modelling approach is proposed for rapid and accurate predictions of switching transients and losses. The analytical models were solved numerically using MATLAB and the results showed a very good match with the experiments and LTSpice simulations. The proposed models were more accurate than LTSpice models in predicting the switching losses and required one third of the computation time. It was found that using the SiC MOSFET's body diode could increase the MOSFET turn on losses by 35% to 79% as its junction temperature increases from 25°C to 125°C (600V 20A switching operation). This is due to the reverse recovery charge and higher junction capacitance of the body diode. This is in contrast with a Schottky diode which exhibits switching characteristics which have little variation with temperature. A detailed breakdown of MOSFET switching losses is also presented to quantify the losses due to reverse recovery and device and circuit parasitic capacitances, which shows that the reverse recovery of the body diode is responsible for 3% and 23% of the total switching losses at 25°C and 125°C, respectively. A SiC Schottky diode is connected across the body diode to suppress the reverse recovery effect and the experimental results showed the performance benefit of this configuration over a wide range of temperatures and load currents.

20 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022277
2021233
2020287
2019334
2018303