Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.

A Method for Junction Temperature Estimation Utilizing Turn-on Saturation Current for SiC MOSFET

Abstract: Keeping the operating junction temperature of a SiC MOSFET within safe and tolerable range is vital. Besides safety reasons, it also extends the device’s life span as thermal transient is identified as one of the major stressor for device aging. Conventional methods use thermal sensors for temperature monitoring but these sensors require extra space and are unable to track transient temperature variation due to relatively slow response time. This paper proposes a new temperature sensor-less method to estimate junction temperature by using the device’s square root of saturation current $(\sqrt {{I_D}} )$ and threshold voltage (V th ) for temperature monitoring. Both parameters can be extracted from device’s saturation current and the experimental results have demonstrated the feasibility of this temperature estimation method. The proposed method looks promising as an alternative for future electronic health monitoring (EHM) system.

Dynamically Optimizing FPGA Applications by Monitoring Temperature and Workloads

Abstract: In the past, field programmable gate array (FPGA) circuits only contained a limited amount of logic and operated at a low frequency. Few applications running on FPGAs consumed excessive power. Today, the temperature of FPGAs are a major concern due to increased logic density and speed. Large applications with highly pipelined datapaths can ultimately generate more heat than the package can dissipate. For FPGAs that operate in controlled environments, heat sinks and fans can be used to effectively dissipate heat from the device. However, FPGA devices operating under harsher thermal conditions in outdoor environments, or in systems with malfunctioning cooling systems need a thermal management control system. To address this issue, we had previously devised a reconfigurable temperature monitoring system that gives feedback to the FPGA circuit using the measured junction temperature of the device. Using this feedback, we designed a novel dual frequency switching system that allows the FPGA circuits to maintain the highest level of throughput performance for a given maximum junction temperature. This paper extends the previous work by additionally making this adaptive frequency mechanism workload aware and evaluating power and latency performance under bursty workload conditions. Our working system has been implemented on the field programmable port extender (FPX) platform developed at Washington University in St. Louis. Experimental results with a scalable image correlation circuit show up to a 30% saving in power for bursty workloads and up to a 2x factor improvement in latency performance as compared to a system without thermal or workload feedback. Our circuit provides power efficient high performance processing of bursty workloads, while ensuring the device always operates within a safe temperature range

Next generation of IGBT-modules applied to high power traction

Abstract: Modern high power traction converters are equipped with IGBT-modules. For a reliable operation the modules have to fulfil the following requirements: High junction temperature limit, large safe operating area, high surge current capability and sufficient thermal cycling capability. In this paper current and next generation of IGBT modules will be characterised regarding the first three aspects.

Infrared detection element and method for fabricating the same and equipment for measuring temperature

Abstract: [Issue] A thermopile type infrared detection element, specifically, a low-cost infrared detection element which can measure temperature with a higher accuracy. [Solution] The infrared detection element (1) which employs a silicon nitride film as a first structure layer (22) becoming the structure at a thin film part (4) is provided. Since the first structure (22) has an inner tensile stress unlike to a silicon oxide film, occurrence of flexure can e prevented. Furthermore, diodes D1 and D2 can be fabricated on a silicon substrate (2) utilizing the first structure layer (22) as an isolation band, and measurement error of a thermopile (12) can be suppressed by preventing variation in the shape thereof incident to variation of environment, thereby providing a high accuracy infrared detection element in which the cold junction temperature can be detected accurately by means of the diodes D1 and D2.