Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.

Temperature controller and array waveguide lattice type optical wavelength multiplexer/demultiplexer

Abstract: In a temperature control device which maintains an object to be controlled at a preset constant temperature and an arrayed waveguide grating optical wavelength multiplexer/demultiplexer, the adverse effect of the junction temperature of the semiconductor control element is eliminated for the purpose of simplifying the overall structure and improving operation efficiency sufficiently without any trouble. The object 10 to be controlled, which is an arrayed waveguide grating optical wavelength multiplexing/demultiplexing element, is fixed on the soaking plate 2 which is made from a good heat conductive material. The semiconductor control element 3 with a control terminal which functions as a heat generator by using its-junction temperature and a temperature sensor 5 are fixed on the soaking plate 2. A negative feedback control is applied to the conduction condition of the semiconductor control element 3 in accordance with the error signal s3 which indicates the difference between the present temperature signal s2 obtained from the temperature detection signal s4 transmitted from the temperature sensor 5 and the preset target temperature signal s1. Consequently, the junction temperature of the semiconductor control element 3 is effectively used as a heating source not as a loss, thereby reducing the power consumption and stabilizing the performance.

Methods for virtual junction temperature measurement respecting internal semiconductor processes

Abstract: This paper discusses the limitation in measurement accuracy of junction temperature measurements of bipolar devices. A limiting factor the measurement delay, caused by slow removal of charge carriers, was investigated by single pulse measurements and evaluated by simulations. A minimal measurement delay of 650μs was found for a 6,5kV IGBT at high temperature.

A simplified thermal analysis approach for power transistor rating in PWM-controlled DC/AC converters

Abstract: A simplified dynamic thermal analysis approach is proposed for the estimation of the peak junction temperature in power IGBT transistors operating in pulse-width modulation (PWM) controlled DC/AC converters. This approach can be used for the rating of electron devices or heatsink systems in power circuit design, as it provides a direct analytical link, in terms of electrical and thermal device parameters and converter operating conditions between the case and the peak junction temperatures. In this way, by imposing a given upper limit on the junction temperature, indirect constraints on device size or load current or heatsink efficiency can easily be obtained. The approach is based on mild, pessimistic approximations on both the spectrum of dissipated power and on the dynamic thermal behavior of the device. The validity of such approximations has been verified by comparison with the results of accurate numerical simulations carried out by using measurement-based loss models. Possible ways of using this approach in a converter rating context are outlined in the paper, by considering different design scenarios.

Simple analog detection of turn-off delay time for IGBT junction temperature estimation

Abstract: IGBT modules suffer from ageing due to thermal and power cycling. Bond wire lift-off or solder layer degradation are the known failure mechanisms. For condition monitoring, an estimation of the junction temperature during operation is necessary. For this purpose, an analog measurement board consisting of simple components is presented. The turn-off delay time is evaluated for temperature estimation. Moreover, a validation of the temperature estimation with an infrared camera is performed.

Estimating Junction Temperature of SiC MOSFET Using Its Drain Current During Turn-On Transient

Abstract: Silicon carbide metal–oxide–semiconductor field-effect transistor (SiC MOSFET) has become a promising device due to its excellent material properties. Junction temperature is an important parameter and a significant health index. In this article, drain current during turn-on transient is taken as the thermo-sensitive electrical parameter (TSEP) to monitor the junction temperature of SiC MOSFET. Based on the physical properties of wide bandgap semiconductor materials, the switching behaviors of SiC MOSFET and the variation of drain current with temperature were studied. The influence of temperature dependence of threshold voltage and carrier mobility on drain current is analyzed. It is proven that the drain current has a positive temperature coefficient during turn-on transient. Finally, the validity of the proposed method is verified by the theoretical analysis and experiments.