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Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.


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Proceedings ArticleDOI
11 Mar 2003
TL;DR: The objectives of this paper are: 1) to present the air-cooling extension for a range of "reasonable" boundary conditions; and 2) to introduce some novel technologies, which may substantially extend the air -cooling applications.
Abstract: The last two decades have seen a steady increase in microprocessor performance as silicon technology continues to scale in accordance with Moore's law. This increasing performance of the microprocessors is also associated with an increase in thermal design power and an increase in both average power density and local power density, commonly referred to as "hot spots". The thermal solutions must ensure that the junction temperature of the processor (die temperature) does not exceed temperatures in the 90-110/spl deg/C range, typically at the hot spots, to ensure device performance and reliability. The majority of OEMs (original equipment manufacturers) within the microelectronics industry would like to achieve this by extending the application of air-cooling technologies. The objectives of this paper are: 1) to present the air-cooling extension for a range of "reasonable" boundary conditions; and 2) to introduce some novel technologies, which may substantially extend the air-cooling applications.

60 citations

Journal ArticleDOI
Cong Li1, Da Jiao1, Jizhou Jia1, Feng Guo1, Jin Wang1 
TL;DR: In this paper, a temperature-dependent thermoelectric model which includes both power electronics circuits and TEC device is presented, and both steady-state and small signal analyses can be carried out, and this paper is more focused on the steadystate part.
Abstract: This paper discusses the modeling and application of thermoelectric cooling (TEC) in power electronics circuits. To investigate the benefits and challenges of using TEC, a temperature-dependent thermoelectric model which includes both power electronics circuits and TEC device is presented. With this model, both steady-state and small signal analyses can be carried out, and this paper is more focused on the steady-state part. For the steady-state analysis, the results have identified the allowed operation range which could be used as guidelines for system design. Also, with TEC device, the case temperature and junction temperature of power electronics switches can be dynamically controlled. Therefore, the switches' thermal cycling problem could be alleviated, and the switch lifetime and overall system reliability will be improved. Both simulation and experimental results are presented in this paper to verify the analysis.

59 citations

Journal ArticleDOI
TL;DR: In this article, an electrical model for quantum-well light-emitting diodes (LEDs) with a current-spreading layer was presented, and an empirical diode current equation was sought by matching the extracted I-V curve.
Abstract: We present an electrical model for quantum-well light-emitting diodes (LEDs) with a current-spreading layer. The LEDs studied have a multiquantum well (MQW) between p-GaN and the n-GaN grown on sapphire. The model consists of a diode connected with a series resistor resulting from the combined resistance of the p-n junction, contacts, and current spreader. Based upon this model, the I-V curve of the diode itself without the series resistance is extracted from the measured LED I-V curve. The model also includes an empirical diode current equation which was sought by matching the extracted I-V curve. In the seeking process, junction temperature (T/sub j/) rather than case temperature (T/sub c/) was used in the equation. The diode model allows one to calculate the reduction on conversion efficiency caused by the series resistor. Results show that the current-spreading layer causes 20% of the efficiency reduction at T/sub j/=107/spl deg/C.

59 citations

Proceedings ArticleDOI
01 Sep 2007
TL;DR: In this paper, the authors quantified the heat dissipation potential of three inverter package configurations over a range of control factors including coolant temperature, number of sides available for cooling, effective heat transfer coefficient, maximum semiconductor junction temperature, and interface material thermal resistance.
Abstract: This study quantifies the heat dissipation potential of three inverter package configurations over a range of control factors. These factors include coolant temperature, number of sides available for cooling, effective heat transfer coefficient, maximum semiconductor junction temperature, and interface material thermal resistance. Heat dissipation potentials are examined in contrast to a research goal to use 105degC coolant and dissipate 200 W/cm2 heat across the insulated gate bipolar transistor and diode silicon area. Advanced double-sided cooling configurations with aggressive heat transfer coefficients show the possibility of meeting these targets for a 125degC maximum junction temperature, but further investigation is needed. Even with maximum tolerable junction temperatures of 200degC, effective heat transfer coefficients of 5,000 to 10,000 W/m2-K will be needed for coolant temperatures of 105degC or higher.

59 citations

Journal ArticleDOI
TL;DR: It was found that the thermal improvement of the LED module led to the enhancement of the light output power and radiant intensity and the temperature calibrating factor, 0.046 nm/°C, was calculated from the peak wavelengths of the LEDs modules.

59 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022277
2021233
2020287
2019334
2018303