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Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, an electric-heat-optical system dynamics model of LED luminaire was proposed which is the basic system dynamic model for LED luminance control, based on the principle of solid-state lighting.

58 citations

Journal ArticleDOI
01 Aug 2012-Energy
TL;DR: In this paper, the junction temperature of the photovoltaic (PV) modules is directly determined based on the p-n junction semiconductor theory, and the proposed method is a new and simple approach with a low calculation burden.

58 citations

Journal ArticleDOI
TL;DR: In this article, a dc/dc boost converter based on a 10kV 10-A MOSFET and a 10-kV 5-A JBS diode was designed and tested under continuous operation for frequencies up to 25 kHz.
Abstract: 10-kV silicon carbide (SiC) MOSFETs are currently being developed by a number of organizations in the U.S. with prospective applications in high-voltage and high-frequency power-electronic systems. The aim of this paper is to demonstrate the high-frequency and high-temperature capability of 10-kV SiC MOSFETs in the application of a dc/dc boost converter. In this study, 10-kV SiC MOSFET and junction barrier Schottky (JBS) diode were characterized and modeled in SPICE. Following this, a dc/dc boost converter based on a 10-kV 10-A MOSFET and a 10-kV 5-A JBS diode was designed and tested under continuous operation for frequencies up to 25 kHz. The boost converter had an output voltage of 4 kV, an output power of 4 kW, and operated with a junction temperature of 174degC for the SiC MOSFET. The fast-switching speed, low losses, and high-temperature operation capability of 10-kV SiC MOSFETs demonstrated in the dc/dc boost converter make them attractive for high-frequency and high-voltage power-conversion applications.

58 citations

Journal ArticleDOI
TL;DR: A detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online Tj sensing methods of switching power semiconductor online junction temperature.
Abstract: Switching power semiconductor online junction temperature $T_{j}$ sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of the implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online $T_{j}$ sensing methods. This paper includes $T_{j}$ sensing methods based on device power dissipation, $T_{j}$ sensing methods based on the “sensor-on-die technology,” $T_{j}$ sensing methods based on device on-state analysis, and $T_{j}$ sensing methods based on device switching transients. Advantages and limits of these methods are also provided.

58 citations

Journal ArticleDOI
TL;DR: In this paper, the authors proposed and simulated GaN-based HEMT technologies that can remove power densities exceeding 30 kW/cm2 at relatively low mass flow rate and pressure drop.
Abstract: Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) dissipate high power densities which generate hotspots and cause thermomechanical problems. Here, we propose and simulate GaN-based HEMT technologies that can remove power densities exceeding 30 kW/cm2 at relatively low mass flow rate and pressure drop. Thermal performance of the microcooler module is investigated by modeling both single- and two-phase flow conditions. A reduced-order modeling approach, based on an extensive literature review, is used to predict the appropriate range of heat transfer coefficients associated with the flow regimes for the flow conditions. Finite element simulations are performed to investigate the temperature distribution from GaN to parallel microchannels of the microcooler. Single- and two-phase conjugate computational fluid dynamics (CFD) simulations provide a lower bound of the total flow resistance in the microcooler as well as overall thermal resistance from GaN HEMT to working fluid. A parametric study is performed to optimize the thermal performance of the microcooler. The modeling results provide detailed flow conditions for the microcooler in order to investigate the required range of heat transfer coefficients for removal of heat fluxes up to 30 kW/cm2 and a junction temperature maintained below 250 °C. The detailed modeling results include local temperature and velocity fields in the microcooler module, which can help in identifying the approximate locations of the maximum velocity and recirculation regions that are susceptible to dryout conditions.

58 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022277
2021233
2020287
2019334
2018303