Topic
Junction temperature
About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.
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Patent•
18 Dec 2009
TL;DR: In this article, a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element is presented, wherein respective forward voltages at junctions of the semiconductor elements and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensors.
Abstract: The present invention relates to a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element, wherein respective forward voltages at junctions of the semiconductor element and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensor, and the junction temperature of the semiconductor element is predicted based on the absolute ambient temperature and the measured forward voltages.
47 citations
01 Nov 2013
TL;DR: An overview of literature where the usage of TSEPs has been hypothesised or realised in realistic power electronic converter setups is provided and their potential use in the aforementioned goals in condition monitoring and active thermal control is described.
Abstract: The temperature of a power semiconductor device is important for both its optimal operation and reliability. If the temperature is known during the operation of a converter, it can be used to monitor the health of power modules: a measurement of aging, scheduling of maintenance, or even implementation of active thermal control to reduce losses and increase lifetime can be performed given an accurate knowledge of temperature. Temperature measurements via thermo-sensitive electrical parameters (TSEP) are one way to carry out immediate temperature readings on fully packaged devices. However, successful implementation of these techniques during the actual operation of a device has not yet been achieved. This paper provides an overview of literature where the usage of TSEPs has been hypothesised or realised in realistic power electronic converter setups. Barriers and limitations preventing wider scale implementation of these methods are discussed. Their potential use in the aforementioned goals in condition monitoring and active thermal control is also described.
47 citations
19 Feb 2003
TL;DR: In this paper, the conduction and switching losses of a three-phase very sparse AC-AC matrix converter (VSMC) supplying a permanent magnet synchronous motor are discussed in detail.
Abstract: In this paper based on experimental investigations of the power semiconductor switching behavior and on analytical calculations the conduction and switching losses of it three-phase very sparse AC-AC matrix converter (VSMC) supplying a permanent magnet synchronous motor are discussed in detail. There, 1200 V-Si-IGBTs/1200 V-Si-ultra-fast-recovery diodes and 1300 V-SiC-JFET/Si-MOSFET cascodes are employed for realizing the converter power circuit. The worst case operating conditions are identified and the efficiencies resulting in dependency of the switching frequency and load current amplitude are shown in graphical form. Furthermore, the operating range of the VSMC with respect to the maximum admissible junction temperature of the power semiconductors is determined. Finally, topics to be treated in the continuation of the research are discussed briefly.
47 citations
TL;DR: In this article, the impact of operation current on the degradation behavior of 310nm UV LEDs was investigated over 1000h of stress, and it was shown that lifetime is inversely proportional to the cube of the current density.
Abstract: The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities from 34 to 201 A/cm2. To separate the impact of current from that of temperature, the junction temperature is kept constant by adjusting the heat sink temperature. Higher current was found to strongly accelerate the optical power reduction during operation. A mathematical model for lifetime prediction is introduced. It indicates that lifetime is inversely proportional to the cube of the current density, suggesting the involvement of Auger recombination.
47 citations
Patent•
05 Nov 1991
TL;DR: In this paper, a control system for regulating the temperature of a heat detector disposed on a heat exchanger is presented, which includes a temperature detector (42), non-liquid cooling means (50,52) for cooling the detector when its temperature is above the desired temperature range, and nonliquid heating means (48,53) for heating the detector if its temperature below the temperatures range.
Abstract: A control system for regulating the temperature of a heat detector disposed on a heat exchanger. The control system includes a temperature detector (42) for determining the temperature of the hot spot sensor (32), non-liquid cooling means (50,52) for cooling the detector when its temperature is above the desired temperature range, and non-liquid heating means (48,53) for heating the detector when its temperature is below the temperatures range. The control system includes control means (82) coupling the temperature sensing means to the non-liquid heating and cooling means. By keeping the heat detector at a generally constant temperature, the accuracy of the hot spot sensor on the heat exchanger is improved.
47 citations