Topic
Junction temperature
About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.
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01 Aug 2014
TL;DR: In this article, a measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity than alternative TSEPs.
Abstract: A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other TSEP based measurement methods, primarily being: an absence of any dependence on operating conditions such as load current, and the potential to achieve higher sensitivity (20mV/C or more) than alternative TSEPs.
47 citations
TL;DR: In this paper, the failure mechanism of Al wires lifting-off was investigated and the major factors were discussed based on both experiments and finite element (FE) simulations, and a new lifetime model was proposed and verified through power cycling tests.
Abstract: Lifting-off of Al bonding wires is one common failure mode of insulated-gate bipolar transistor (IGBT) modules during long-time operation. In the present work, the failure mechanism of Al wires lifting-off was investigated and the major factors were discussed based on both experiments and finite element (FE) simulations. It indicates that lifting-off of Al-wires is mainly determined by the interfacial thermal stress at the bonding interface. Thermal expansion of Al-wires and thermal mismatch of Al–Si interfaces contribute to the interfacial thermal stress which is affected by the resistance heat of Al-wires and power loss of Si-chips. Accordingly, a new lifetime model for the Al wires lifting-off failure mode of IGBT modules is proposed and verified through power cycling tests. The conduction current $I_{c}$ , the heating time $t_{\mathrm{\scriptscriptstyle ON}}$ , and the junction temperature swing $\Delta T_{j}$ are three major factors for the fatigue life model of IGBTs under Al wires lifting-off failure mode.
47 citations
Patent•
24 Sep 2009
TL;DR: In this paper, the junction temperature of an infrared transmitter LED is measured and compensated by adjusting the driver current of a voltage-to-current converter driving the LED, which is measured by comparing the difference in the forward diode voltage at different current densities.
Abstract: Systems and methods to achieve a circuit for driving one or more infrared transmitter LEDs with temperature compensation have been disclosed. In a preferred embodiment of the invention the circuit has been applied for a rain sensing system. The junction temperature of the LED is measured and compensated by adjusting the driver current of a voltage-to-current converter driving the LED. The LED junction temperature is measured by comparing the difference in the forward diode voltage at different current densities. This voltage difference is extracted when switching the drive currents between different constant values. The measurement results are converted to digital values, which are used by a buffered dual ladder resistive DAC structure to adjust the drive current to temperature variations.
47 citations
TL;DR: In this paper, a composite coating composed of cupric oxide (CuO) and silicon-based resin was applied to an aluminum-alloy heat sink for a light emitting diode (LED) module.
46 citations
01 Oct 2017
TL;DR: This paper attempts to summarize the past developments and recent advances in measuring junction temperature of power semiconductor device, and the promising methods are recommended for future work.
Abstract: Recent growth of power semiconductor device market has been driven largely by the growing demand for an efficient way to convert and distribute energy in the field of renewable energy, electrical vehicles, aerospace, marine and applications. For safety, critical applications, temperature management and control are the most important functions. Therefore, estimating or measuring the junction temperature of the power semiconductor device is useful to perform thermal management and converter control. Several methods have been published to measure the junction temperature of the insulated gate bipolar transistor (IGBT). This paper attempts to summarize the past developments and recent advances in measuring junction temperature of power semiconductor device is presented. Finally, the promising methods are recommended for future work.
46 citations