Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Abstract: This paper proposes the adoption of the inherent emitter stray inductance $L_{{\rm{eE}}}$ in high-power insulated gate bipolar transistor modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

Applications of Wide Bandgap (WBG) devices in AC electric drives: A technology status review

Abstract: This paper is an effort to put together all the potential applications of Wide Bandgap (WBG) devices in AC electric drives. Low inductance motors, high speed motors, and electric drives operating in a high temperature environment are the main application areas of WBG devices. Low voltage permanent magnet motors and slotless motors have a low inductance and require a stringent high-bandwidth current regulation strategy to obtain an acceptable current ripple. Silicon (Si) devices cannot be used in this case due to their limited switching frequency. MW-level high speed motors have devices operating at high voltage and current levels and a high fundamental frequency (600–1200 Hz) that cause very high switching losses in Si IGBT devices. SiC devices have enabled the use of power electronic converters for MW-level high speed motors. Integrated motor drives (IMDs) are also benefitted by WBG devices as they reduce the size of the power converter and allow operation at a high junction temperature. Therefore, the inverter can be mounted on the motor itself which can be a significant heat source due to motor losses. Cooling requirements in high temperature environment applications such as hybrid Electric Vehicle (EV), ground vehicles in combat zones, and power converters used in space technology like land rovers etc., are greatly reduced due to low losses and high junction temperatures. Operation at high frequencies and high temperatures reduces the size of electric drive significantly.

Terminal box for solar cell module

Abstract: A condition of not permitting an increased temperature value of a diode 13 to exceed the junction temperature is satisfied by a simple structure at a low cost. A plurality of countercurrent prevention diodes 13 between terminal board 12 to which electrodes a of solar cell modules M are connected are connected in parallel. When an output current I from the solar cell module M flows in a circuit of the plurality of diodes 13 connected in parallel, a current i flowing in each diode 13 is reduced by a factor of the number of diodes connected in parallel, for instance, when the three diodes are connected in parallel, the current becomes one third. When the value of the flowing current is reduced, a heating value is also reduced. A heat radiating piece 20 is provided on the terminal board 12. In this way, the heat resistance reliability of the diode 13 can be maintained without using an expensive heat resistant diode, by sharing the load of the output current by the plurality of diodes 13 and efficiently radiating heat from the terminal board 12.

Thermal Stress Analysis and MPPT Optimization of Photovoltaic Systems

Abstract: In the last years, the optimization of the energy harvesting of photovoltaic systems during fast variable irradiance conditions has been an active area of research and of competition among the companies. The proposed fast maximum power point tracking (MPPT) algorithms can produce extremely variable loading of the power semiconductors resulting in a decrease of the system lifetime, which in consequence can nullify the economic advantage of higher energy harvesting. This work analyzes the problem with a deep theoretical and laboratory work. Then, a multiobjective MPPT, which limits the positive temperature gradient and the maximum junction temperature of the power semiconductors, is introduced and fully validated in the laboratory with a mission profile emulating variable irradiance conditions.

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Abstract: Short circuit capability of commercial SiC MOSFETs is analyzed, which is compared with that of commercial Si IGBTs. Junction temperatures during short circuit tests are analyzed in this work. A test bench is designed for short circuit tests of discrete MOSFETs and IGBTs. Commercially available 1200V SiC MOSFETs from Wolfspeed (C2M0080120D) and 1200V Si IGBTs from Infineon (IKW25N120H3) with similar current rating are tested. The short circuit withstand time (t cr ) of the 1200V SiC MOSFET is much shorter than that of the 1200V Si IGBT. A 1-D transient finite element thermal model based on structure parameters is constructed to investigate the junction temperature curves during short circuit. According to the analysis of heat generation, short circuit capability of the SiC MOSFET is mainly restricted by high electric field at the P-N junction and high short circuit current density.