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Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.


Papers
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Journal ArticleDOI
M.G. Adlerstein1, S.L.G. Chu1
TL;DR: In this paper, high performance double-drift Read IMPATT diodes have been demonstrated at 60 GHz with 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency with a junction temperature rise of 225°C.
Abstract: High-performance GaAs double-drift Read IMPATT diodes have been demonstrated at 60 GHz. 1.24-W CW output power at 11.4-percent dc to RF conversion efficiency was obtained with a junction temperature rise of 225°C. The doping profiles and test circuits have not yet been optimized and we expect that still higher power and efficiency should be achievable.

35 citations

Journal ArticleDOI
Jing Wang1, Yixi Cai1, Xiaohua Li1, Zhao Xudong1, Jun Wang1, Shi Yunfei1, Yunxi Shi1 
TL;DR: In this paper, the working performance of the ionic wind using wire-to-net and needle-tonet electrodes was investigated experimentally to find an effective way to solve the problem of thermal management in high-power light-emitting diodes (HPLED).

35 citations

Journal ArticleDOI
TL;DR: In this article, a three-dimensional thermal simulation for analysis of heat dissipation of AlGaN/GaN HEMT with diamond substrates is presented by the finite element method.

35 citations

Journal ArticleDOI
TL;DR: In this paper, the authors proposed a virtual junction temperature estimation method based on the real-time measurement of semiconductor's quasi-threshold voltage using dedicated modified gate driver circuit.
Abstract: Temperature management and control are among the most critical functions in power electronic devices. Knowledge of power semiconductor’s operating temperature is important for circuit design, as well as for converter control. Virtual junction temperature measurement or estimation is not an easy task, therefore designing the appropriate circuitry for virtual junction temperature in the real operating conditions not affecting regular circuit operation is a demanding task for engineers. The proposed method enables virtual junction temperature estimation based on the real-time measurement of semiconductor’s quasi-threshold voltage using dedicated modified gate driver circuit.

35 citations

Journal ArticleDOI
TL;DR: In this article, the steady state thermal performance of an isolated SO-8 package is experimentally characterized on five thermal test printed circuit boards (PCBs) and the results compared against corresponding numerical predictions.
Abstract: The steady state thermal performance of an isolated SO-8 package is experimentally characterized on five thermal test printed circuit boards (PCBs) and the results compared against corresponding numerical predictions. The study includes the low and high conductivity JEDEC standard, FR4 test PCBs and typical application boards. With each PCB displaying a different internal structure and effective thermal conductivity, this study highlights the sensitivity of component operating temperature to the PCB, provides benchmark data for validating PCB numerical modeling methodologies, and helps one assess the applicability of standard junction-to-ambient thermal resistance (/spl theta//sub JA/) data for design purposes on nonstandard PCBs. Measurements of junction temperature and component-PCB surface temperature distributions were used to identify the most appropriate modeling methodology for both the component and the PCB. Based on these results, a new PCB modeling methodology is proposed that conserves the need for modeling detail without compromising prediction accuracy.

34 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022277
2021233
2020287
2019334
2018303