Junction temperature

About: Junction temperature is a research topic. Over the lifetime, 5058 publications have been published within this topic receiving 58643 citations.

High efficiency silicon-based high power LED package integrated with micro- thermoelectric device

Abstract: A new thermal management application of silicon-based thermoelectric (TE) cooler integrated with high power light emitting diode (LED) is investigated in present study. The silicon-based TE cooler herein is fabricated by MEMS fabrication technology and flip-chip assembly process that is used for high power LED cooling. An electrical-thermal conversion method is used to estimate the junction temperature of LED. Moreover, the integrating sphere is also used to measure the light efficiency of LED. The thermal images photographed by infrared camera demonstrated the cooling function of the silicon-based TE devices. The results also show that high power LED integrated with silicon-based thermoelectric cooler package can effectively reduce the thermal resistance to zero. In addition, the light efficiency of the LED (1 W) will increase under low TE cooler input power (0.55 W), which is about 1.3 times of that without TE cooler packaging.

A practical method to extract the thermal resistance for heterojunction bipolar transistors

Abstract: Self-heating of bipolar transistors can lead to a significant increase of their junction temperature This must be correctly considered for accurate modeling and also to ensure reliability Because of this, several measurement techniques for thermal resistance extraction were proposed in the literature However, a drawback of most methods is that they require measurements at different ambient temperatures for each device This is very tedious if a large number of different transistors must be investigated Therefore, we present a new technique that allows extraction of the thermal resistance from simple measurements carried out at only one ambient temperature, based on previously determined technology-specific data Moreover, as a byproduct, the emitter resistance is estimated The validity of this method is demonstrated here for SiGe HBTs, but it has also been used successfully for GaAs HBTs

Temperature-dependent turn-on loss analysis for GaN HFETs

Abstract: Enhancement-mode GaN HFETs enable efficient high-frequency converter design, but this technology is relatively new and exhibits different characteristics from Si or SiC MOSFETs. GaN performance at elevated temperature is especially unique. Turn-on time increases significantly with temperature, and turn-on losses increase as a result. This phenomenon can be explained based on the relationships between junction temperature and GaN device transconductance, and between transconductance and turn-on time. An analytical relationship between temperature and turn-on loss has been derived for the 650-V GS66508 from GaN Systems, and verified with experimental results. Based on this relationship, a detailed model is developed, and a simplified scaling factor is proposed for estimating turn-on loss in e-mode GaN HFETs, using room-temperature switching characterization and typically published datasheet parameters.

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Abstract: This paper proposes a novel method for junction temperature measurement of power metal-oxide-semiconductor field-effect transistors ( mosfet s). The measurement method is using the turn- on delay of impulse signal, which is the delay time between the rising edge of impulse signal and the corresponding rising edge of drain–source current. Results show that the turn- on delay has a good linear relationship with temperature, and the method is suitably efficient for accurate junction temperature measurement of power mosfet s. The proposed method is verified using the thermal infrared method. Finally, this method is used to measure the real-time junction temperature of power mosfet device in a dc–dc boost converter.