Showing papers on "Ka band published in 1973"
TL;DR: In this paper, the authors describe silicon double-drift IMPATT diodes designed for operation at microwave and millimetre-wave frequencies, achieving a power output of 16 W with 12.3% efficiency in the X band, 11 W with 14% efficiency for the KU band, and 6.4 W with 5.3 percent efficiency for a Ka band.
Abstract: The letter describes silicon double-drift IMPATT diodes designed for operation at microwave and millimetre-wave frequencies. These devices have delivered pulsed-power outputs of 16 W with 12.3% efficiency in the X band, 11 W with 14% efficiency in the KU band, and 6.4 W with 5.3% efficiency in the Ka band. These results, when combined with the demonstrated high reliability of silicon IMPATTS, should lead to the wide application of double-drift devices in pulsed-radar systems.
7 citations
01 Jan 1973
3 citations