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Showing papers on "Ka band published in 1977"


Journal ArticleDOI
TL;DR: In this article, a displaced Maxwellian approach was used to simulate small and large-signal InP transferred-electron amplifiers operating in the Ka-band, and the performance of amplifiers having the usual n+cathode contacts, and p-type notch-cathodes contacts designed to produce a uniform electric field.
Abstract: A displaced Maxwellian approach which includes relaxation effects is used to simulate small- and large-signal InP transferred-electron amplifiers operating in Ka -band. The devices considered are short-circuit stable; that is, they have a subcritical doping-length product. The performance of amplifiers having the usual n+-cathode contacts, and p-type notch-cathode contacts designed to produce a uniform electric field, are compared. It is found that the notch contacts have a moderate influence on small-signal characteristics, and a profound influence on large-signal performance. Small-signal bandwidths of 65 percent are predicted for both types of contacts. The saturation efficiency of amplifiers, biased at three times threshold, is much higher for the notch-contact device with values near 5 percent being predicted. The nonlinearity of the large-signal gain characteristic is shown to vary greatly as the frequency deviates from the optimum value.

3 citations