Showing papers on "Ka band published in 1982"
TL;DR: In this article, a balanced biphase-shift-keying (BPSK) and quadri-phase-shiftkeying modulator for the 27 GHz band is presented.
Abstract: Microwave integrated circuit (MIC) balanced biphase-shift-keying (BPSK) and quadri-phase-shift-keying (QPSK) modulators have been achieved in the 27-GHz band. The modulators are fabricated using a combination of microstrip lines and slot lines, viz., tow-sided MIC. The diodes used are beam-lean Schottky-barrier diodes. Balanced BPSK modulation is performed by path-switching and mode transformation from the slot line to microstrip lines. The insertion loss is 2.2 dB at a carrier frequency of 27 GHz. The phase error and the amplitude deviation are less than 1° and 0.5 dB, respectively. The QPSK modulator consists of two BPSK modulators, a power divider, and a branch-line hybrid coupler. The configuration of the modulator is the parallel-connected type. The insertion loss is 6.3 dB at a carrier frequency of 27 GHz. The phase error is less than 2°, and the rise time and fall time of the modulated earner are less than 300 ps. The isolation between the carrier input port and the QPSK modulated earner output port is greater than 25 dB. These modulators can be extended to the millimeter-wave band.
44 citations
TL;DR: In this article, a two-stage (4 diode) microstrip InP Gunn amplifier and a four-section suspended substrate multiplexer were fabricated in the Ka band.
Abstract: Multiple stage hybrid coupled reflection amplifiers and frequency multipliers are modeled using two-port analysis, A two-stage (4 diode) microstrip InP Gunn amplifier and a four-section suspended substrate multiplexer were fabricated in Ka band. Analysis shows that the performance of the hybrid coupled amplifier, both for packaged diodes and pure negative resistance (ideal monolithic) devices, is extremely sensitive to input and output VSWR's.
10 citations
15 Jun 1982
TL;DR: In this paper, the design and fabrication of broad-band millimeter-wave mixers using GaAs beam lead diodes and planar circuit techniques is described and a conversion loss of less than 9 dB with instantaneous bandwidths of 26 to 40 GHz (RF) and 2 to 16 GHz (IF) has been measured.
Abstract: This paper describes the design and fabrication of broad-band millimeter-wave mixers using GaAs beam lead diodes and planar circuit techniques. At Ka band, a conversion loss of less than 9 dB with instantaneous bandwidths of 26 to 40 GHz (RF) and 2 to 16 GHz (IF) has been measured. At W band, the conversion loss was less than 11 dB for an instantaneous RF of 78 to 94 GHz and an IF of 26 to 42 GHz.
9 citations
15 Jun 1982
TL;DR: In this paper, a deep-recess channel structure has been applied to high power FETs in order to improve performances above to K-band, achieving 2W power output with 16% power-added efficiency at 18 GHz, and 165 mW with 3dB associated gain at 29.5 GHz.
Abstract: A deep-recess channel structure has been applied to high power FETs in order to improve performances above to K-band. Internally matched devices have exhibited 2W power output with 16% power-added efficiency at 18 GHz, and 165 mW with 3dB associated gain at 29.5 GHz.
7 citations
15 Jun 1982
TL;DR: In this paper, the authors describe a Ka-band mixer which utilizes a printed-circuit board mounted in an orthogonal hybrid tee and provides a small (< 1 cubic inch) low-cost mixer with typical conversion loss of 6 dB.
Abstract: This paper describes a novel Ka-band mixer which utilizes a printed-circuit board. This device is mounted in an orthogonal hybrid tee. The design is scalable to higher millimeter-wave frequencies and provides a small (< 1 cubic inch) low-cost mixer with typical conversion loss of 6 dB.