Showing papers on "Ka band published in 1983"
TL;DR: In this article, the design and performance of a GaAs monolithic 1800 one-bit switched line phase shifter test circuit for Ka-band operation is presented, and a self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitic in the switching FET's.
Abstract: The design and performance of a GaAs monolithic 1800 one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitic in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.
25 citations
TL;DR: In this paper, the design and performance of a GaAs monolithic 180° one-bit switched line phase shifter test circuit for Ka-band operation is presented. And a self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's.
Abstract: The design and performance of a GaAs monolithic 180° one-bit switched line phase shifter test circuit for Ka -band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20° of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.
5 citations
01 Jan 1983
TL;DR: In this paper, a bi-phase p.s. modulator for use in 29 GHz Radio equipment has been developed that gives state-of-the-art performance (3 dB insertion loss across 7% bandwidth and 70/100 Mbit/s data rate using beam lead PIN diodes as the switching elements).
Abstract: A bi-phase p.s.k. modulator for use in 29 GHz Radio equipment has been developed that gives state of the art performance (3 dB insertion loss across 7% bandwidth and 70/100 Mbit/s data rate using beam lead PIN diodes as the switching elements). The circuit maintains the full instantaneous bandwidth without requiring any tuning or alignment during or after manufacture.
2 citations
TL;DR: In this article, a simple Ka-band Y-circulator is presented, fabricated according to integrated waveguide technology (INWATE), with 20 dB isolation bandwidth of 20%, and return loss and insertion loss about 20 dB and 0.5 dB, respectively.
Abstract: A simple Ka-band Y-circulator is presented, fabricated according to integrated waveguide technology (INWATE). The performance is as follows: 20 dB isolation bandwidth of 20%, and return loss and insertion loss about 20 dB and 0.5 dB, respectively. This type of circulator seems to be well suited to form part of future INWATE circuits.
2 citations
01 Jan 1983
TL;DR: In this paper, the authors used conventional photolithography to fabricate FETs with submicrometer gate lengths by using the undercut associated with chemical etching, achieving an output power of 91 mW at 3 dB gain and 4.5% efficiency.
Abstract: Ka-band results using submicrometer gate length, air-bridged, soldered flip-chip GaAs power FETs in finline, ridge-waveguide circuits are reported. Conventional photolithography was used to fabricate FETs with submicrometer gate lengths by using the undercut associated with chemical etching. At 35 GHz an output power of 91 mW at 3 dB gain and 4.5% efficiency was measured.
1 citations
01 Jan 1983
TL;DR: In this article, the performance of a Ka-band PIN-diode switch configured in double-ridged WR-28 waveguide and composed of up to six contiguous, self-contained modules is described.
Abstract: The performance of a Ka-Band PIN-diode switch. configured in double-ridged WR-28 waveguide and composed of up to six contiguous, self-contained modules is described. The large isalation, greater than 70 dB in the OFF state, while maintaining 1 dB minimum insertion loss in the ON state, is obtained through the application of the traveling-wave concept. The switch at present exhibits in excess of 10% bandwidth near 35 GHz in both states. Switching times of the silicon mesa diades, measured on several completed assemblies, is 10-15 nanoseconds from OFF to ON state and less than five nanoseconds in the reverse sequence. These results are compared with predictions based on a cascaded circuit model using measured diode, parasitic and transmission line elements. The empirical relationship af peak power and switching times in PIN-diodes are used to predict the performance of a fully developed K/sub a/-Band PIN-diode switch.