Showing papers on "Laser linewidth published in 2019"

Individual nanoantennas empowered by bound states in the continuum for nonlinear photonics

Abstract: Bound states in the continuum (BICs) represent localized modes with energies embedded in the continuous spectrum of radiating waves. BICs were discovered initially as a mathematical curiosity in quantum mechanics, and more recently were employed in photonics. Pure mathematical bound states have infinitely-large quality factors (Q factors) and zero resonant linewidth. In optics, BICs are physically limited by a finite size, material absorption, structural disorder, and surface scattering, and they manifest themselves as the resonant states with large Q factors, also known as supercavity modes or quasi-BICs. Optical BIC resonances have been demonstrated only in extended 2D and 1D systems and have been employed for distinct applications including lasing and sensing. Optical quasi-BIC modes in individual nanoresonators have been discovered recently but they were never observed in experiment. Here, we demonstrate experimentally an isolated subwavelength nanoresonator hosting a quasi-BIC resonance. We fabricate the resonator from AlGaAs material on an engineered substrate, and couple to the quasi-BIC mode using structured light. We employ the resonator as a nonlinear nanoantenna and demonstrate record-high efficiency of second-harmonic generation. Our study brings a novel platform to resonant subwavelength photonics.

Sub-hertz fundamental linewidth photonic integrated Brillouin laser

Abstract: Spectrally pure lasers, the heart of precision high-end scientific and commercial applications, are poised to make the leap from the laboratory to integrated circuits. Translating this performance to integrated photonics will dramatically reduce cost and footprint for applications such as ultrahigh capacity fibre and data centre networks, atomic clocks and sensing. Despite the numerous applications, integrated lasers currently suffer from large linewidth. Brillouin lasers, with their unique properties, offer an intriguing solution, yet bringing their performance to integrated platforms has remained elusive. Here, we demonstrate a sub-hertz (~0.7 Hz) fundamental linewidth Brillouin laser in an integrated Si3N4 waveguide platform that translates advantages of non-integrated designs to the chip scale. This silicon-foundry-compatible design supports low loss from 405 to 2,350 nm and can be integrated with other components. Single- and multiple-frequency output operation provides a versatile low phase-noise solution. We highlight this by demonstrating an optical gyroscope and a low-phase-noise photonic oscillator. Brillouin lasing with 0.7 Hz fundamental linewidth is observed by optically exciting a monolithic bus–ring Si3N4 waveguide resonator. The Brillouin laser is applied to an optical gyroscope and a low phase-noise photonic microwave oscillator.

Optical clock intercomparison with $6\times 10^{-19}$ precision in one hour

Abstract: Improvements in atom-light coherence are foundational to progress in quantum information science, quantum optics, and precision metrology. Optical atomic clocks require local oscillators with exceptional optical coherence due to the challenge of performing spectroscopy on their ultra-narrow linewidth clock transitions. Advances in laser stabilization have thus enabled rapid progress in clock precision. A new class of ultrastable lasers based on cryogenic silicon reference cavities has recently demonstrated the longest optical coherence times to date. In this work we utilize such a local oscillator, along with a state-of-the-art frequency comb for coherence transfer, with two Sr optical lattice clocks to achieve an unprecedented level of clock stability. Through an anti-synchronous comparison, the fractional instability of both clocks is assessed to be $4.8\times 10^{-17}/\sqrt{\tau}$ for an averaging time $\tau$ in seconds. Synchronous interrogation reveals a quantum projection noise dominated instability of $3.5(2)\times10^{-17}/\sqrt{\tau}$, resulting in a precision of $5.8(3)\times 10^{-19}$ after a single hour of averaging. The ability to measure sub-$10^{-18}$ level frequency shifts in such short timescales will impact a wide range of applications for clocks in quantum sensing and fundamental physics. For example, this precision allows one to resolve the gravitational red shift from a 1 cm elevation change in only 20 minutes.

Electrically pumped photonic integrated soliton microcomb

Abstract: Microcombs provide a path to broad-bandwidth integrated frequency combs with low power consumption, which are compatible with wafer-scale fabrication. Yet, electrically-driven, photonic chip-based microcombs are inhibited by the required high threshold power and the frequency agility of the laser for soliton initiation. Here we demonstrate an electrically-driven soliton microcomb by coupling a III–V-material-based (indium phosphide) multiple-longitudinal-mode laser diode chip to a high-Q silicon nitride microresonator fabricated using the photonic Damascene process. The laser diode is self-injection locked to the microresonator, which is accompanied by the narrowing of the laser linewidth, and the simultaneous formation of dissipative Kerr solitons. By tuning the laser diode current, we observe transitions from modulation instability, breather solitons, to single-soliton states. The system operating at an electronically-detectable sub-100-GHz mode spacing requires less than 1 Watt of electrical power, can fit in a volume of ca. 1 cm3, and does not require on-chip filters and heaters, thus simplifying the integrated microcomb. Chip-based frequency combs promise many applications, but full integration requires the electrical pump source and the microresonator to be on the same chip. Here, the authors show such integration of a microcomb with < 100 GHz mode spacing without additional filtering cavities or on-chip heaters.

High-power sub-kHz linewidth lasers fully integrated on silicon

Abstract: We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1 kHz linewidth and over 37 mW output power, as well as a ring-assisted DBR laser with less than 500 Hz linewidth. The extended DBR lasers are fabricated by heterogeneously integrating III-V material on Si as a gain section plus a 15 mm long, low-kappa Bragg grating reflector in an ultralow-loss silicon waveguide. The low waveguide loss (0.16 dB/cm) and long Bragg grating with narrow bandwidth (2.9 GHz) are essential to reducing the laser linewidth while maintaining high output power and single-mode operation. The combination of narrow linewidth and high power enable its use in coherent communications, RF photonics, and optical sensing.

Tutorial on narrow linewidth tunable semiconductor lasers using Si/III-V heterogeneous integration

Abstract: Narrow linewidth lasers have many applications, such as higher order coherent communications, optical sensing, and metrology. While semiconductor lasers are typically unsuitable for such applications due to relatively low coherence, recent advances in heterogeneous integration of III-V with silicon have shown that this is no longer true. In this tutorial, we discuss in-depth techniques that are used to drastically reduce the linewidth of a laser. The heterogeneous silicon-III/V platform can fully utilize these techniques, and fully integrated lasers with Lorentzian linewidth on the order of 100 Hz and tuning range of 120 nm are shown.

A Review of High-Performance Quantum Dot Lasers on Silicon

Abstract: Laser gain regions using quantum dots have numerous improvements over quantum wells for photonic integration. Their atom-like density of states gives them unique gain properties that can be finely tuned by changing growth conditions. The gain bandwidth can be engineered to be broad or narrow and to emit at a wide range of wavelengths throughout the near infrared. The large energy level separation of the dot states from the surrounding material results in excellent high-temperature performance and gain recovery at sub-picosecond timescales. The fact that the quantum dots are isolated from each other and act independently at inhomogeneously broadened wavelengths results in ultralow linewidth enhancement factors, highly stable broadband mode-locked lasers, single-section mode locking, and the possibility of reduced crosstalk between amplified signals at low signal injection and enhanced four-wave mixing at high signal injection. The high carrier confinement and areal dot density provide reduced sensitivity to crystalline defects allowing for long device lifetimes even when epitaxially grown on silicon at high dislocation densities.

High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity

Abstract: Low-cost, small-footprint, highly efficient, and mass-producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs), which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time to our knowledge, a low-noise high-channel-count 20 GHz passively mode-locked quantum dot laser grown on a complementary metal-oxide-semiconductor compatible on-axis (001) silicon substrate. The laser demonstrates a wide mode-locking regime in the O band. A record low timing jitter value for passively mode-locked semiconductor lasers of 82.7 fs (4–80 MHz) and a narrow RF 3 dB linewidth of 1.8 kHz are measured. The 3 dB optical bandwidth of the comb is 6.1 nm (containing 58 lines, with 80 lines within the 10 dB bandwidth). The integrated average relative intensity noise values of the whole spectrum and a single wavelength channel are −152 dB/Hz and −133 dB/Hz in the frequency range from 10 MHz to 10 GHz, respectively. Utilizing 64 channels, an aggregate total transmission capacity of 4.1 terabits per second is realized by employing a 32 Gbaud Nyquist four-level pulse amplitude modulation format. The demonstrated performance makes the laser a compelling on-chip WDM source for multi-terabit/s optical interconnects in future large-scale silicon EPICs.

Room temperature nanocavity laser with interlayer excitons in 2D heterostructures.

Abstract: Atomically thin layered two-dimensional (2D) materials have provided a rich library for both fundamental research and device applications. Bandgap engineering and controlled material response can be achieved from artificial heterostructures. Recently, excitonic lasers have been reported using transition metal dichalcogenides; however, the emission is still the intrinsic energy bandgap of the monolayers. Here, we report a room temperature interlayer exciton laser with MoS2/WSe2 heterostructures. The onset of lasing was identified by the distinct kink in the "L-L" curve and the noticeable spectral linewidth collapse. Different from visible emission of intralayer excitons in monolayer components, our laser works in the infrared range, which is fully compatible with the well-established technologies in silicon photonics. Long lifetime of interlayer excitons relaxes the requirement of the cavity quality factor by orders of magnitude. Room temperature interlayer exciton lasers might open new perspectives for developing coherent light sources with tailored optical properties on silicon photonics platforms.

Analyzing the Raman Spectra of Graphenic Carbon Materials from Kerogens to Nanotubes: What Type of Information Can Be Extracted from Defect Bands?

Abstract: Considering typical spectra of a broad range of carbonaceous materials from gas-shale to nanotubes, various ways by which defects show up in Raman spectra are exampled and discussed. The position, resonance behavior, and linewidth of both the D and G bands are compared, even if in some cases obtaining accurate information on the materials from the fitting parameters is a difficult task. As a matter of fact, even if a full picture is unreachable, defining parameter trends is one acceptable option. Two ways to determine the linewidth, either graphically and or by fitting are proposed in order to be able to compare literature data. The relationship between the crystallite size obtained from the linewidth and from X-ray diffraction, which is complementary to the Tuinstra and Koenig law, is examined. We show that a single approach is not possible unless modeling is performed and therefore that analysis of Raman spectra should be adapted to the specificities of each sample series, i.e., a minimum of knowledge about the materials is always required.

Asymmetrically strained quantum dots with non-fluctuating single-dot emission spectra and subthermal room-temperature linewidths.

Abstract: The application of colloidal semiconductor quantum dots as single-dot light sources still requires several challenges to be overcome. Recently, there has been considerable progress in suppressing intensity fluctuations (blinking) by encapsulating an emitting core in a thick protective shell. However, these nanostructures still show considerable fluctuations in both emission energy and linewidth. Here we demonstrate type-I core/shell heterostructures that overcome these deficiencies. They are made by combining wurtzite semiconductors with a large, directionally anisotropic lattice mismatch, which results in strong asymmetric compression of the emitting core. This modifies the structure of band-edge excitonic states and leads to accelerated radiative decay, reduced exciton–phonon interactions, and suppressed coupling to the fluctuating electrostatic environment. As a result, individual asymmetrically strained dots exhibit highly stable emission energy (<1 meV standard deviation) and a subthermal room-temperature linewidth (~20 meV), concurrent with nearly nonblinking behaviour, high emission quantum yields, and a widely tunable emission colour. Asymmetric strain intrinsic to core/shell nanocrystals based on lattice-mismatched wurtzite semiconductors leads to suppression of spectral fluctuation, narrowing of photoluminescence linewidth and reduced blinking in colloidal nanocrystals.

Laser Frequency Combs for Coherent Optical Communications

Abstract: Laser frequency combs with repetition rates on the order of 10 GHz and higher can be used as multi-carrier sources in wavelength-division multiplexing (WDM). They allow replacing tens of tunable continuous-wave lasers by a single laser source. In addition, the comb's line spacing stability and broadband phase coherence enable signal processing beyond what is possible with an array of independent lasers. Modern WDM systems operate with advanced modulation formats and coherent receivers. This introduces stringent requirements in terms of signal-to-noise ratio, power per line, and optical linewidth which can be challenging to attain for frequency comb sources. Here, we set quantitative benchmarks for these characteristics and discuss tradeoffs in terms of transmission reach and achievable data rates. We also highlight recent achievements for comb-based superchannels, including >10 Tb/s transmission with extremely high spectral efficiency, and the possibility to significantly simplify the coherent receiver by realizing joint digital signal processing. We finally discuss advances with microresonator frequency combs and compare their performance in terms of flatness and conversion efficiency against state-of-the-art electro-optic frequency comb generators. This contribution provides guidelines for developing frequency comb sources in coherent fiber-optic communication systems.

Spinning faster: protein NMR at MAS frequencies up to 126 kHz

Abstract: We report linewidth and proton T1, T1ρ and T2′ relaxation data of the model protein ubiquitin acquired at MAS frequencies up to 126 kHz. We find a predominantly linear improvement in linewidths and coherence decay times of protons with increasing spinning frequency in the range from 93 to 126 kHz. We further attempt to gain insight into the different contributions to the linewidth at fast MAS using site-specific analysis of proton relaxation parameters and present bulk relaxation times as a function of the MAS frequency. For microcrystalline fully-protonated ubiquitin, inhomogeneous contributions are only a minor part of the proton linewidth, and at 126 kHz MAS coherent effects are still dominating. We furthermore present site-specific proton relaxation rate constants during a spinlock at 126 kHz MAS, as well as MAS-dependent bulk T1ρ (1HN).

Scalable in operando strain tuning in nanophotonic waveguides enabling three-quantum-dot superradiance

Abstract: The quest for an integrated quantum optics platform has motivated the field of semiconductor quantum dot research for two decades. Demonstrations of quantum light sources, single photon switches, transistors and spin–photon interfaces have become very advanced. Yet the fundamental problem that every quantum dot is different prevents integration and scaling beyond a few quantum dots. Here, we address this challenge by patterning strain via local phase transitions to selectively tune individual quantum dots that are embedded in a photonic architecture. The patterning is implemented with in operando laser crystallization of a thin HfO2 film ‘sheath’ on the surface of a GaAs waveguide. Using this approach, we tune InAs quantum dot emission energies over the full inhomogeneous distribution with a step size down to the homogeneous linewidth and a spatial resolution better than 1 µm. Using these capabilities, we tune multiple quantum dots into resonance within the same waveguide and demonstrate a quantum interaction via superradiant emission from three quantum dots. Local tuning of quantum dots embedded in a photonic waveguide can be achieved through the strain produced by laser heating of a thin layer of HfO2 deposited around the waveguide. The method is exploited to tune three quantum dots in resonance.

Hybrid Integrated Semiconductor Lasers with Silicon Nitride Feedback Circuits

Abstract: Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 μm wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.

Rabi oscillations and resonance fluorescence from a single hexagonal boron nitride quantum emitter

Abstract: Hexagonal boron nitride (hBN), a wide-bandgap 2D material, is rapidly emerging as a promising candidate for quantum optics experiments. In this work, we demonstrate, to the best of our knowledge, the first signature of Rabi oscillations, the time-domain analogue of the Mollow triplet, from a resonantly driven hBN quantum emitter. Resonant photoluminescence excitation measurements reveal that the emitter undergoes strong spectral diffusion with a time scale of 37±25 ms, resulting in a 0.6 GHz spectral diffusion broadened linewidth at the weak excitation limit. We further realize resonance fluorescence from the same emitter using a cross-polarized setup. The results shown here present an important step toward utilizing coherent optical control in 2D materials for the realization of scalable quantum information processing.

Intrinsic lifetime of higher excitonic states in tungsten diselenide monolayers

Abstract: The reduced dielectric screening in atomically thin transition metal dichalcogenides allows to study the hydrogen-like series of higher exciton states in optical spectra even at room temperature. The width of excitonic peaks provides information about the radiative decay and phonon-assisted scattering channels limiting the lifetime of these quasi-particles. While linewidth studies so far have been limited to the exciton ground state, encapsulation with hBN has recently enabled quantitative measurements of the broadening of excited exciton resonances. Here, we present a joint experiment-theory study combining microscopic calculations with spectroscopic measurements on the intrinsic linewidth and lifetime of higher exciton states in hBN-encapsulated WSe2 monolayers. Surprisingly, despite the increased number of scattering channels, we find both in theory and experiment that the linewidth of higher excitonic states is similar or even smaller compared to the ground state. Our microscopic calculations ascribe this behavior to a reduced exciton–phonon scattering efficiency for higher excitons due to spatially extended orbital functions.

High-harmonic generation from an epsilon-near-zero material

Abstract: High-harmonic generation (HHG) is a signature optical phenomenon of strongly driven, nonlinear optical systems. Specifically, the understanding of the HHG process in rare gases has played a key role in the development of attosecond science1. Recently, HHG has also been reported in solids, providing novel opportunities such as controlling strong-field and attosecond processes in dense optical media down to the nanoscale2. Here, we report HHG from a low-loss, indium-doped cadmium oxide thin film by leveraging the epsilon-near-zero (ENZ) effect3–8, whereby the real part of the material’s permittivity in certain spectral ranges vanishes, as well as the associated large resonant enhancement of the driving laser field. We find that ENZ-assisted harmonics exhibit a pronounced spectral redshift as well as linewidth broadening, resulting from the photo induced electron heating and the consequent time-dependent ENZ wavelength of the material. Our results provide a new platform to study strong-field and ultrafast electron dynamics in ENZ materials, reveal new degrees of freedom for spectral and temporal control of HHG, and open up the possibilities of compact solid-state attosecond light sources. High harmonics are generated from a thin film by leveraging the epsilon-near-zero effect. These kinds of harmonic are found to exhibit a pronounced spectral redshift as well as linewidth broadening caused by the time-dependency of this effect.

1.3- $\mu$ m Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

Abstract: This letter reports on a 1.3- $\mu \text{m}$ reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with −7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators.

Tunable hybrid silicon nitride and thin-film lithium niobate electro-optic microresonator.

Abstract: This Letter presents, to the best of our knowledge, the first hybrid Si3N4-LiNbO3-based tunable microring resonator where the waveguide is formed by loading a Si3N4 strip on an electro-optic (EO) material of X-cut thin-film LiNbO3. The developed hybrid Si3N4-LiNbO3 microring exhibits a high intrinsic quality factor of 1.85×105, with a ring propagation loss of 0.32 dB/cm, resulting in a spectral linewidth of 13 pm, and a resonance extinction ratio of ∼27 dB within the optical C-band for the transverse electric mode. Using the EO effect of LiNbO3, a 1.78 pm/V resonance tunability near 1550 nm wavelength is demonstrated.

X-ray pumping of the 229 Th nuclear clock isomer

Abstract: The metastable first excited state of thorium-229, 229mTh, is just a few electronvolts above the nuclear ground state1–4 and is accessible by vacuum ultraviolet lasers. The ability to manipulate the 229Th nuclear states with the precision of atomic laser spectroscopy5 opens up several prospects6, from studies of fundamental interactions in physics7,8 to applications such as a compact and robust nuclear clock5,9,10. However, direct optical excitation of the isomer and its radiative decay to the ground state have not yet been observed, and several key nuclear structure parameters—such as the exact energies and half-lives of the low-lying nuclear levels of 229Th—remain unknown11. Here we present active optical pumping into 229mTh, achieved using narrow-band 29-kiloelectronvolt synchrotron radiation to resonantly excite the second excited state of 229Th, which then decays predominantly into the isomer. We determine the resonance energy with an accuracy of 0.07 electronvolts, measure a half-life of 82.2 picoseconds and an excitation linewidth of 1.70 nanoelectronvolts, and extract the branching ratio of the second excited state into the ground and isomeric state. These measurements allow us to constrain the 229mTh isomer energy by combining them with γ-spectroscopy data collected over the past 40 years. Excitation to the second excited state of 229Th is used to populate the metastable state 229mTh, enabling accurate determination of the isomer’s energy, half-life and excitation linewidth.

Ultra-narrow linewidth laser based on a semiconductor gain chip and extended Si3N4 Bragg grating.

Abstract: We demonstrate ultra-narrow linewidth fixed wavelength hybrid lasers composing a semiconductor gain chip and extended silicon nitride Bragg grating. Fabricated ultra-low κ Bragg gratings provide a narrow bandwidth and high side-lobe suppression ratio. A single-wavelength 1544 nm hybrid extended-distributed Bragg reflector laser with 24 mW output power and a Lorentzian linewidth of 320 Hz is demonstrated, providing a high-performance light source for on- and off-chip applications.

3.7 kW monolithic narrow linewidth single mode fiber laser through simultaneously suppressing nonlinear effects and mode instability

Abstract: In this paper, we report a 3.7 kW all fiber narrow linewidth single mode fiber laser. The full width at half-maximum is about 0.30 nm, and the beam quality is Mx2=1.358, My2=1.202 at maximum output power. The laser is achieved by simultaneously suppressing nonlinear effects and mode instability (MI). Different seeds are injected into the main amplifier to study stimulated Raman scattering (SRS) effect. The results show that the phase modulated single frequency seed is benefit to suppress the SRS effect. For the phase modulated single frequency seed, inserting a filter in preamplifier will suppress amplified spontaneous emission (ASE) and decrease the backward power. By optimizing the coiling of active fiber, the MI effect is suppressed.

Solution-processed nanographene distributed feedback lasers

Abstract: The chemical synthesis of nanographene molecules constitutes the bottom-up approach toward graphene, simultaneously providing rational chemical design, structure-property control and exploitation of their semiconducting and luminescence properties. Here, we report nanographene-based lasers from three zigzag-edged polycyclic aromatics. The devices consist of a passive polymer film hosting the nanographenes and a top-layer polymeric distributed feedback resonator. Both the active material and the laser resonator are processed from solution, key for the purpose of obtaining low-cost devices with mechanical flexibility. The prepared lasers show narrow linewidth ( < 0.13 nm) emission at different spectral regions covering a large segment of the visible spectrum, and up to the vicinity of the near-infrared. They show outstandingly long operational lifetimes (above 105 pump pulses) and very low thresholds. These results represent a significant step forward in the field of graphene and broaden its versatility in low-cost devices implying light emission, such as lasers. Chemically synthesized graphene nanosheets offer device design flexibility and improved optoelectronic performance. Here, the authors report solution-processed distributed feedback lasers with graphene nanosheets as active media having linewidths < 0.13 nm, long operational lifetimes and low thresholds.

Ultra-narrow linewidth Brillouin laser with nanokelvin temperature self-referencing

Abstract: Ultrastable lasers serve as the backbone for some of the most advanced scientific experiments today and enable the ability to perform atomic spectroscopy and laser interferometry at the highest levels of precision possible. With the recent and increasing interest in applying these systems outside of the laboratory, it remains an open question as to how to realize a laser source that can reach the extraordinary levels of narrow linewidth required and still remain sufficiently compact and portable for field use. Critical to the development of this ideal laser source is the necessity for the laser to be insensitive to both short- and long-term fluctuations in temperature, which ultimately broaden the laser linewidth and cause drift in the laser’s center frequency. We show here that the use of a large mode-volume optical resonator with 2 m of optical fiber, which acts to suppress the resonator’s fast thermal fluctuations, together with stimulated Brillouin scattering optical nonlinearity presents a powerful combination that enables lasing with an ultra-narrow linewidth of 20 Hz. To address the laser’s long-term temperature drift, we apply two orthogonal polarizations of the narrow Brillouin line as a metrological tool that precisely senses a minute change in the resonator’s temperature at the level of 85 nK. The precision afforded by this temperature measurement enables new possibilities for the stabilization of resonators against environmental perturbation.

Quantum frequency conversion of a quantum dot single-photon source on a nanophotonic chip

Abstract: Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scalable chip-integrated technologies. Here, we report the first demonstration to our knowledge of quantum frequency conversion of a quantum dot single-photon source on a silicon nanophotonic chip. Single photons from a quantum dot in a micropillar cavity are shifted in wavelength with an on-chip conversion efficiency ≈12%, limited by the linewidth of the quantum dot photons. The intensity autocorrelation function g(2)(τ) for the frequency-converted light is antibunched with g(2)(0)=0.290±0.030, compared to the before-conversion value g(2)(0)=0.080±0.003. We demonstrate the suitability of our frequency-conversion interface as a resource for quantum dot sources by characterizing its effectiveness across a wide span of input wavelengths (840–980 nm) and its ability to achieve tunable wavelength shifts difficult to obtain by other approaches.

STED-Inspired Laser Lithography Based on Photoswitchable Spirothiopyran Moieties

Abstract: We introduce a photoresist based on methacrylate copolymers bearing photochromic spirothiopyran moieties as side groups that can crosslink via supramolecular interaction between the chromophores. Upon two-photon excitation, the resist is capable of generating freestanding three-dimensional structures and offers an inhibition channel, which allows for stimulated-emission depletion-inspired laser lithography. Reversible inhibition, linewidth narrowing, and resolution enhancement are demonstrated.

Coherence and indistinguishability of highly pure single photons from non-resonantly and resonantly excited telecom C-band quantum dots

Abstract: The role of resonant pumping schemes in improving the photon coherence is investigated on InAs/InGaAs/GaAs quantum dots (QDs) emitting in the telecom C-band. The linewidths of transitions of multiple exemplary quantum dots are determined under above-band pumping and resonance fluorescence (RF) via Fourier-transform spectroscopy and resonance scans, respectively. The average linewidth is reduced from (9.74 ± 3.3) GHz in the above-band excitation to (3.50 ± 0.39) GHz under RF underlining its superior coherence properties. Furthermore, the feasibility of coherent state preparation with a fidelity of (49.2 ± 5.8)% is demonstrated, constituting a first step toward on-demand generation of coherent, single, telecom C-band photons directly emitted by QDs. Finally, two-photon excitation of the biexciton is investigated as a resonant pumping scheme. A deconvoluted single-photon purity value of g HBT ( 2 ) ( 0 ) = 0.072 ± 0.104 and a postselected degree of indistinguishability of V HOM = 0.894 ± 0.109 are determined for the biexciton transition. This represents another step in demonstrating the necessary quantum optical properties for prospective applications.

Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Abstract: We demonstrate the first electrically injected nonpolar m-plane GaN-based vertical-cavity surface-emitting lasers (VCSELs) with lattice-matched nanoporous bottom DBRs. Lasing under pulsed operation at room temperature was observed near 409 nm with a linewidth of ~0.6 nm and a maximum output power of ~1.5 mW. The VCSELs were linearly polarized and polarization-locked in the a-direction, with a polarization ratio of 0.94. The high polarization ratio and polarization pinning reveal that the optical scattering from the nanoporous DBRs is negligible. A high characteristic temperature of 357 K resulted from the slightly negative offset between the peak gain and cavity mode wavelengths.

400 mW narrow linewidth single-frequency fiber ring cavity laser in 2 um waveband.

Abstract: We present a single-frequency thulium-doped fiber laser (TDFL) with a narrow linewidth of 20 kHz. Stable single-longitudinal-mode (SLM) lasing operation at 1957 nm is achieved using a segment of un-pumped polarization-maintaining thulium-doped fiber (PM-TDF) as an ultra-narrow bandwidth filter. A high optical signal-to-noise ratio (OSNR) of over 60 dB is obtained and a high power of over 400 mW is achieved with a high slope-efficiency (~45.8%) thulium-doped fiber amplifier (TDFA).