Topic
Laser linewidth
About: Laser linewidth is a research topic. Over the lifetime, 19889 publications have been published within this topic receiving 343799 citations.
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TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.
Abstract: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 03 nanometer The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis
8,592 citations
TL;DR: In this article, a theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers.
Abstract: A theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers. They found the linewidth to be inversely proportional to power and to have a value of 114 MHz at 1 mW per facet. This value is 30 times greater than can be explained by existing theories. The enhanced linewidth is attributed to the variation of the real refractive index n' with carrier density. Spontaneous emission induces phase and intensity changes in the laser field. The restoration of the laser to its steady-state intensity results in changes in the imaginary part of the refractive index \Delta n" . These changes are accompanied by changes in the real part of the refractive index \Delta n' , which cause additional phase fluctuations and line broadening. The linewidth enhancement is shown to be 1 + \alpha^{2} , where \alpha = \Delta n'/\Delta n" . A value of \alpha \approx 5.4 , needed to explain the observed linewidth, is close to the experimental values of a of 4.6 and 6.2.
2,293 citations
TL;DR: A nanoplasmonic analogue of EIT is experimentally demonstrated using a stacked optical metamaterial to achieve a very narrow transparency window with high modulation depth owing to nearly complete suppression of radiative losses.
Abstract: In atomic physics, the coherent coupling of a broad and a narrow resonance leads to quantum interference and provides the general recipe for electromagnetically induced transparency (EIT). A sharp resonance of nearly perfect transmission can arise within a broad absorption profile. These features show remarkable potential for slow light, novel sensors and low-loss metamaterials. In nanophotonics, plasmonic structures enable large field strengths within small mode volumes. Therefore, combining EIT with nanoplasmonics would pave the way towards ultracompact sensors with extremely high sensitivity. Here, we experimentally demonstrate a nanoplasmonic analogue of EIT using a stacked optical metamaterial. A dipole antenna with a large radiatively broadened linewidth is coupled to an underlying quadrupole antenna, of which the narrow linewidth is solely limited by the fundamental non-radiative Drude damping. In accordance with EIT theory, we achieve a very narrow transparency window with high modulation depth owing to nearly complete suppression of radiative losses. Plasmonic nanostructures enable the concentration of large electric fields into small spaces. The classical analogue of electromagnetically induced transparency has now been achieved in such devices, leading to a narrow resonance in their absorption spectrum. This combination of high electric-field concentration and sharp resonance offers a pathway to ultracompact sensors with extremely high sensitivity.
1,652 citations
TL;DR: In this paper, light scattering of the linewidth and frequency shift of the optical phonon in silicon over the temperature range of 5-1400 K are presented. But they do not consider the four-phonon anharmonic processes.
Abstract: Systematic measurements by light scattering of the linewidth and frequency shift of the $\stackrel{\ensuremath{\rightarrow}}{\mathrm{q}}=0$ optical phonon in silicon over the temperature range of 5-1400 K are presented. Both the linewidth and frequency shift exhibit a quadratic dependence on temperature at high temperatures. This indicates the necessity of including terms in the phonon proper self-energy corresponding to four-phonon anharmonic processes.
1,208 citations
TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Abstract: Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.
1,027 citations