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Laser linewidth

About: Laser linewidth is a research topic. Over the lifetime, 19889 publications have been published within this topic receiving 343799 citations.


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Journal ArticleDOI
TL;DR: In this paper, a self-assembling method was used to grow InAs quantum dots with size fluctuations of less than 4% on GaAs using the self-assembly method and the photoluminescence linewidth was reduced to 21 meV at room temperature.
Abstract: InAs quantum dots with size fluctuations of less than 4% were grown on GaAs using the self-assembling method. By covering the quantum dots with In0.2Ga0.8As or In0.2Al0.8As, strain in InAs dots can be partly reduced due to relaxation of lattice constraint in the growth direction. This results in low-energy emission (about 1.3 μm) from the quantum dots. The photoluminescence linewidth can be reduced to 21 meV at room temperature. This width is completely comparable to the theoretical limit of a band-to-band emission from a quantum well at room temperature. Because the dots can be uniformly covered by the strain reducing layers, factors that degrade size uniformity during coverage, such as compositional mixing or segregation, will be suppressed, allowing for an almost ideal buried quantum dot structure.

551 citations

Journal ArticleDOI
TL;DR: In this article, the authors show that encapsulation of monolayer MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as they measure in photoluminescence and reflectivity a FWHM down to 2 meV at T=4
Abstract: The strong light-matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics applications. But, so far, optical transition linewidths even at low temperature are typically as large as a few tens of meV and contain homogeneous and inhomogeneous contributions. This prevented in-depth studies, in contrast to the better-characterized ML materials MoSe2 and WSe2. In this work, we show that encapsulation of ML MoS2 in hexagonal boron nitride can efficiently suppress the inhomogeneous contribution to the exciton linewidth, as we measure in photoluminescence and reflectivity a FWHM down to 2 meV at T=4 K. Narrow optical transition linewidths are also observed in encapsulated WS2, WSe2, and MoSe2 MLs. This indicates that surface protection and substrate flatness are key ingredients for obtaining stable, high-quality samples. Among the new possibilities offered by the well-defined optical transitions, we measure the homogeneous broadening induced by the interaction with phonons in temperature-dependent experiments. We uncover new information on spin and valley physics and present the rotation of valley coherence in applied magnetic fields perpendicular to the ML.

540 citations

Journal ArticleDOI
TL;DR: A simple approach to this relation with an approximate formula for evaluation of the laser linewidth that can be applied to arbitrary noise spectral densities is presented.
Abstract: Frequency fluctuations of lasers cause a broadening of their line shapes. Although the relation between the frequency noise spectrum and the laser line shape has been studied extensively, no simple expression exists to evaluate the laser linewidth for frequency noise spectra that does not follow a power law. We present a simple approach to this relation with an approximate formula for evaluation of the laser linewidth that can be applied to arbitrary noise spectral densities.

520 citations

Journal ArticleDOI
TL;DR: In this paper, the authors describe a compact, economic and versatile diode laser system based on commercial laser diodes, optically stabilized by means of feedback from a diffraction grating, which offers singlemode operation with a linewidth of a few 100 kHz, continuous scans over 25 GHz, high chirp rates (up to 9 GHz/ms) and FM-modulation up to the GHz range.

519 citations

Journal ArticleDOI
TL;DR: In this paper, a closed-form solution for the pulses of a homogeneously broadened laser mode locked by a saturable absorber of relaxation time much longer than the pulsewidth is presented.
Abstract: A closed-form solution is presented for the pulses of a homogeneously broadened laser mode locked by a saturable absorber of relaxation time much longer than the pulsewidth. With suitable approximations, the pulse shape is a secant hyperbolic. The system is described in terms of the linewidth omega C of the system, the saturation energies of the saturable absorber and the laser medium, the ratio of saturable-absorber loss to resonator loss, and the ratio of cavity round-trip time and laser-medium relaxation time. The energy and width of the pulse are obtained as functions of these parameters. Graphs are presented for the operating regimes as bounded by the choice of the preceding parameters. The theoretical predictions are compared with second-harmonic-generation (SHG) autocorrelation traces of mode-locked dye-laser pulses.

518 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023482
20221,066
2021575
2020759
2019723
2018733