Laser power scaling

About: Laser power scaling is a research topic. Over the lifetime, 38339 publications have been published within this topic receiving 512058 citations.

Laser phase and frequency stabilization using an optical resonator

Abstract: We describe a new and highly effective optical frequency discriminator and laser stabilization system based on signals reflected from a stable Fabry-Perot reference interferometer. High sensitivity for detection of resonance information is achieved by optical heterodyne detection with sidebands produced by rf phase modulation. Physical, optical, and electronic aspects of this discriminator/laser frequency stabilization system are considered in detail. We show that a high-speed domain exists in which the system responds to the phase (rather than frequency) change of the laser; thus with suitable design the servo loop bandwidth is not limited by the cavity response time. We report diagnostic experiments in which a dye laser and gas laser were independently locked to one stable cavity. Because of the precautions employed, the observed sub-100 Hz beat line width shows that the lasers were this stable. Applications of this system of laser stabilization include precision laser spectroscopy and interferometric gravity-wave detectors.

Multidimensional quantum well laser and temperature dependence of its threshold current

Abstract: A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D‐QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C.

External optical feedback effects on semiconductor injection laser properties

Abstract: Influences on the semiconductor laser properties of external optical feedback, i.e., return of a portion of the laser output from a reflector external to the laser cavity, have been examined. Experimental observations with a single mode laser is presented with analysis based on a compound cavity laser model, which has been found to explain essential features of the experimental results. In particular, it has been demonstrated that a laser with external feedback can be multistable and show hysteresis phenomena, analogous to those of non-linear Fabry-Perot resonator. It has also been shown that the dynamic properties of injection lasers are significantly affected by external feedback, depending on interference conditions between returned light and the field inside the laser diode.

Theory of the linewidth of semiconductor lasers

Abstract: A theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers. They found the linewidth to be inversely proportional to power and to have a value of 114 MHz at 1 mW per facet. This value is 30 times greater than can be explained by existing theories. The enhanced linewidth is attributed to the variation of the real refractive index n' with carrier density. Spontaneous emission induces phase and intensity changes in the laser field. The restoration of the laser to its steady-state intensity results in changes in the imaginary part of the refractive index \Delta n" . These changes are accompanied by changes in the real part of the refractive index \Delta n' , which cause additional phase fluctuations and line broadening. The linewidth enhancement is shown to be 1 + \alpha^{2} , where \alpha = \Delta n'/\Delta n" . A value of \alpha \approx 5.4 , needed to explain the observed linewidth, is close to the experimental values of a of 4.6 and 6.2.

Two-photon polymerization initiators for three-dimensional optical data storage and microfabrication

Abstract: Two-photon excitation provides a means of activating chemical or physical processes with high spatial resolution in three dimensions and has made possible the development of three-dimensional fluorescence imaging1, optical data storage2,3 and lithographic microfabrication4,5,6. These applications take advantage of the fact that the two-photon absorption probability depends quadratically on intensity, so under tight-focusing conditions, the absorption is confined at the focus to a volume of order λ3 (where λ is the laser wavelength). Any subsequent process, such as fluorescence or a photoinduced chemical reaction, is also localized in this small volume. Although three-dimensional data storage and microfabrication have been illustrated using two-photon-initiated polymerization of resins incorporating conventional ultraviolet-absorbing initiators, such photopolymer systems exhibit low photosensitivity as the initiators have small two-photon absorption cross-sections (δ). Consequently, this approach requires high laser power, and its widespread use remains impractical. Here we report on a class of π;-conjugated compounds that exhibit large δ (as high as 1, 250 × 10−50 cm4 s per photon) and enhanced two-photon sensitivity relative to ultraviolet initiators. Two-photon excitable resins based on these new initiators have been developed and used to demonstrate a scheme for three-dimensional data storage which permits fluorescent and refractive read-out, and the fabrication of three-dimensional micro-optical and micromechanical structures, including photonic-bandgap-type structures7.