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Lasing threshold

About: Lasing threshold is a(n) research topic. Over the lifetime, 24528 publication(s) have been published within this topic receiving 488194 citation(s).

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Journal ArticleDOI
Michael H. Huang1, Samuel S. Mao, Henning Feick1, Haoquan Yan2  +6 moreInstitutions (2)
08 Jun 2001-Science
TL;DR: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated and self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process.

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Abstract: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 03 nanometer The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis

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8,414 citations


Journal ArticleDOI
Abstract: A new type of semiconductor laser is studied, in which injected carriers in the active region are quantum mechanically confined in two or three dimensions (2D or 3D). Effects of such confinements on the lasing characteristics are analyzed. Most important, the threshold current of such laser is predicted to be far less temperature sensitive than that of conventional lasers, reflecting the reduced dimensionality of electronic state. In the case of 3D‐QW laser, the temperature dependence is virtually eliminated. An experiment on 2D quantum well lasers is performed by placing a conventional laser in a strong magnetic field (30 T) and has demonstrated the predicted increase of T0 value from 144 to 313 °C.

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3,005 citations


Journal ArticleDOI
David C. Look1Institutions (1)
Abstract: Wurtzitic ZnO is a wide-bandgap (3.437 eV at 2 K) semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films. Most of these applications require only polycrystalline material; however, recent successes in producing large-area single crystals have opened up the possibility of producing blue and UV light emitters, and high-temperature, high-power transistors. The main advantages of ZnO as a light emitter are its large exciton binding energy (60 meV), and the existence of well-developed bulk and epitaxial growth processes; for electronic applications, its attractiveness lies in having high breakdown strength and high saturation velocity. Optical UV lasing, at both low and high temperatures, has already been demonstrated, although efficient electrical lasing must await the further development of good, p-type material. ZnO is also much more resistant to radiation damage than are other common semiconductor materials, such as Si, GaAs, CdS, and even GaN; thus, it should be useful for space applications.

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2,485 citations


Journal ArticleDOI
Victor I. Klimov1, Alexander Mikhailovsky1, S. Xu1, Anton V. Malko1  +4 moreInstitutions (2)
13 Oct 2000-Science
Abstract: The development of optical gain in chemically synthesized semiconductor nanoparticles (nanocrystal quantum dots) has been intensely studied as the first step toward nanocrystal quantum dot lasers. We examined the competing dynamical processes involved in optical amplification and lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots. Narrowband stimulated emission with a pronounced gain threshold at wavelengths tunable with the size of the nanocrystal was observed, as expected from quantum confinement effects. These results unambiguously demonstrate the feasibility of nanocrystal quantum dot lasers.

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2,403 citations


Journal ArticleDOI
Paul Emma1, R. Akre1, J. Arthur1, Richard M. Bionta2  +35 moreInstitutions (3)
01 Sep 2010-Nature Photonics
Abstract: The Linac Coherent Light Source free-electron laser has now achieved coherent X-ray generation down to a wavelength of 1.2 A and at a brightness that is nearly ten orders of magnitude higher than conventional synchrotrons. Researchers detail the first operation and beam characteristics of the system, which give hope for imaging at atomic spatial and temporal scales.

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2,373 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202220
2021725
2020920
2019963
2018943
2017924

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Topic's top 5 most impactful authors

Hui Cao

116 papers, 7.9K citations

Mikhail V. Maximov

103 papers, 1.5K citations

Dieter Bimberg

67 papers, 1.4K citations

Siu Fung Yu

50 papers, 1.5K citations

V. M. Ustinov

44 papers, 619 citations