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Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.


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TL;DR: In this paper, a two-step seeding process was developed to lower the transformation temperature and modify the grain structure of ferroelectric lead zirconate titanate (PZT) thin films with high Zr/Ti ratio.
Abstract: A two-step seeding process has been developed to lower the transformation temperature and modify the grain structure of ferroelectric lead zirconate titanate (PZT) thin films with high Zr/Ti ratio. Previous study has shown that nucleation is the rate-limiting step for the perovskite formation. Therefore, any process that enhances the kinetics of nucleation is likely to decrease the transformation temperature. In this process, a very thin (45 nm) seeding layer of PbTiO3, which has a low effective activation energy for perovskite formation, was used to provide nucleation sites needed for the low temperature perovskite formation. In this study, we have shown that the pyrochlore-to-perovskite phase transformation temperature of PbZrxTi1−xO3 films of high Zr/Ti ratio (e.g., x = 53/47) can be lowered by as much as 100 °C. The grain size of these films can also be substantially modified by this two-step approach.

257 citations

Journal ArticleDOI
TL;DR: The degradation of dielectric properties of ferroelectric Pb(ZrxTi1−x)O3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated in this paper.
Abstract: The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1−x)O3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low‐field dielectric permittivity (er) measurements. It was observed that a low er layer existed at the Pt/PZT interface but not at the RuO2/PZT and Pt/SrBi2Ta2O9 interfaces. In the case of Pt/PZT, the capacitance of this interfacial layer decreases with increasing fatigue while the er of the bulk PZT film remains constant. This indicates that fatigue increases the interfacial layer thickness and/or decreases interfacial layer permittivity, but does not change the bulk properties. For the capacitors with RuO2/PZT/RuO2 and Pt/S...

256 citations

Journal ArticleDOI
TL;DR: In this article, a statistical approach is used to determine the effect of porosity in ceramic materials on their dielectric breakdown strength, which is in good agreement with the experimental data for lead zirconate titanate ceramics.
Abstract: A statistical approach is used to determine the effect of porosity in ceramic materials on their dielectric breakdown strength. The calculated drop in dielectric strength is in good agreement with the experimental data for lead zirconate titanate ceramics. The theory shows that the measured dielectric strength in porous materials is a function of the porosity, the void size, and of the dimensions of the test sample.

255 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the effect of strain gradient on flexoelectricity in unpoled soft lead zirconate titanate (PZT) ceramic.
Abstract: Strain-gradient-induced polarization or flexoelectricity was investigated in unpoled soft lead zirconate titanate (PZT) ceramic where the texture symmetry ∞∞m forbids macropiezoelectricity. Even under high strain gradient (1 m−1) the induced polarization is small (1.6 μC/m2) at 20 °C. Higher strain gradients induce ferroelastic poling and an additional extrinsic contribution to the flexoelectric coefficient μ12 raising the value from 0.5 to 2.0 μC/m. Cooling through the Curie point (TC) under maximum stress (80 MPa) where the peak permittivity (∼20 000) could raise μ12 to 20 μC/m, the equivalent electric field is still only ∼1 kV/m, inadequate to achieve significant ferroelectric poling. The situation may be different in thin PZT films where much larger strain gradients can occur.

255 citations

Journal ArticleDOI
TL;DR: Magnetoelectric laminate composites were constructed by stacking and bonding together a PZT disk and two layers of Terfenol-D disks with different directions of magnetostriction as mentioned in this paper.
Abstract: Magnetoelectric laminate composites of piezoelectric/magnetostrictive materials were prepared by stacking and bonding together a PZT disk and two layers of Terfenol-D disks with different directions of magnetostriction. These composites were studied to investigate (i) dependence on the magnetostriction direction of the Terfenol-D disk and (ii) dependence on the direction of the applied ac magnetic field. Three different types of assemblies were prepared by using two types of disks: one with magnetostriction along the radial direction, the other with magnetostriction along the thickness direction. The maximum magnetoelectric voltage coefficient (dE/dH) of 5.90 V/cm·Oe was obtained for a design where the composite was made by two Terfenol-D layers with a radial magnetostriction direction.

253 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023116
2022267
2021168
2020180
2019189
2018206