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Lead zirconate titanate
About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.
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TL;DR: It is shown that highly sensitive, in situ, Salmonella typhimurium detection can be achieved at 90% relative humidity using a lead zirconate titanate (PZT) thin-film-based microcantilever using a gold-coated glass cantilever.
53 citations
TL;DR: An atomic force microscope cantilever with PZT thin film with pyramidal stylus was used for actuation of feedback motion as discussed by the authors, and the maximum stroke was more than 1 μm within a frequency range from direct current up to natural resonant frequency, e.g., 28.48 kHz.
Abstract: An atomic force microscope cantilever with PZT thin film with pyramidal stylus was used for actuation of feedback motion. The maximum stroke of the cantilever was more than 1 μm within a frequency range from direct current up to natural resonant frequency, e.g., 28.48 kHz. An image of a pit of a compact disk with a depth of 100 nm was successfully obtained using only cantilever actuation in a vertical direction.
53 citations
TL;DR: In this article, the giant magnetoelectric effect of laminated composites of rare-earth-iron alloys (Terfenol-D) and lead-zirconate-titanate (PZT) is calculated by using the finite element method.
Abstract: The giant magnetoelectric effect of laminated composites of rare-earth-iron alloys (Terfenol-D) and lead–zirconate–titanate (PZT) is calculated by using the finite element method. Our simulations show that the magnetoelectric response of the laminated Terfenol-D/PZT composites is strongly dependent on interfacial bonding between Terfenol-D and PZT layers. The giant magnetoelectric effect and its dependence on the interfacial bonding predicted by the finite element method for the composites are in good agreement with predictions by a recent analytical method and recent experimental observations available.
53 citations
TL;DR: In this paper, an electrical measurement scheme that minimizes the effect of charge traps and reveals the polarization-dependent hysteresis of electronic transport in graphene-Pb(Zr,Ti)O3 FeFETs is demonstrated.
Abstract: Ferroelectric field-effect transistors (FeFETs) employing graphene on inorganic perovskite substrates receive considerable attention due to their interesting electronic and memory properties. They are known to exhibit an unusual hysteresis of electronic transport that is not consistent with the ferroelectric polarization hysteresis and is previously shown to be associated with charge trapping at graphene–ferroelectric interface. Here, an electrical measurement scheme that minimizes the effect of charge traps and reveals the polarization-dependent hysteresis of electronic transport in graphene–Pb(Zr,Ti)O3 FeFETs is demonstrated. Observation of the polarization-dependent conductivity hysteresis is important for the fundamental understanding of the interplay between the ferroelectric polarization and charge carriers in graphene. It is also important for practical memory applications because this hysteresis emulates the operation of nonvolatile memories and reveals the range of ON and OFF currents that can be achieved in long term data storage. It is demonstrated that this measurement scheme can be used to optimize the memory performance of graphene–PZT FeFETs that can exhibit nonvolatile time-independent ON/OFF ratios of over 5. The described measurement technique can potentially be used in the studies of kinetics of charge trap dissipation, polarization-dependent properties, and memory performance of FeFET devices comprising other 2D materials and various ferroelectric substrates.
53 citations
TL;DR: In this paper, lead zirconate titanate (PZT) thin films were deposited on stainless steel (SS) substrates by a sol-gel spin-on technique, and crystallized by a low-temperature annealing process.
Abstract: Lead zirconate titanate (PZT) thin films were deposited on stainless steel (SS) substrates by a sol-gel spin-on technique, and crystallized by a low-temperature annealing process. A lead titanate thin coating was deposited between the PZT film and SS substrate in order to decrease the annealing temperature. X-ray diffraction revealed that amorphous PZT thin layers crystallized into a perovskite phase on annealed at 550 °C for 0.5 h. No second phase formation, due to chemical reactions with the substrate, was observed. For films with a thickness of 1.68 μm, the dielectric constant, tan δ, remnant polarization and coercive field were determined to be 280, 0.07, 35 μC/cm2, and 99 kV/cm, respectively. The transverse piezoelectric constant d31 was measured using a wafer flexural technique.
53 citations