Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.

Single‐Step Deposition of Gel‐Derived Lead Zirconate Titanate Films: Critical Thickness and Gel Film to Ceramic Film Conversion

Abstract: PZT thin films were prepared on silica-glass substrates from Pb(CH3COO)2·3H2O–Zr(n-OC3H7)4–Ti(i-OC3H7)4–H2O–CH3COOH–CH3OC2H4OH–n-C3H7OH solutions containing polyvinylpyrrolidone (PVP) via nonrepetitive dip-coating or spin-coating. The thickness of the gel films was varied by changing the substrate withdrawal and rotation speeds, and the crack formation was examined after firing the gel films at 700°C. The critical thickness, i.e., the maximum thickness achievable without crack formation, was maximized at a PZT/alkoxide mole ratio of ∼1, where crack-free PZT films as thick as 2 μm could be obtained via single-step deposition. Thermal analysis was conducted on gel films deposited on a glass substrate at ∼25°C and then peeled off the substrate. Infrared absorption spectroscopy and X-ray diffractometry measurements were conducted on films deposited on silicon wafers. These analyses revealed that PVP and CH3COO− were thermally decomposed at 250°–320°C, leaving carbonaceous species, followed by the crystallization of Pb3(CO3)2(OH)2 at ∼350°C. The oxidation of the carbonaceous species occurred at ∼360°–460°C; perovskite PZT then was formed at ∼550°C. The film thickness decreased greatly at 200°–350°C, where thermal decomposition of PVP and CH3COO− occurred. The films fired at 700°C were rather porous and not very transparent. Preheating the gel films at 100° or 200°C resulted in particulate microstructure with gaps between the particles, and, at 350°C, caused crack formation, both of which further decreased the optical transmittance.

Analysis of thin film piezoelectric microaccelerometer using analytical and finite element modeling

Abstract: Microaccelerometers using piezoelectric lead zirconate titanate (PZT) thin films have attracted much interest due to their simple structure and potentially high sensitivity. In this paper, we present a theoretical model for a microaccelerometer with four suspended flexural PZT-on-silicon beams and a central proof mass configuration. The model takes into account the effect of device geometry and elastic properties of the piezoelectric film, and agrees well with the results obtained by the finite element analysis. This study shows that the accelerometer sensitivity decreases with increases in the beam width, in the thickness of the bilayer beams, and in the elastic modulus of the mechanical microstructure. Increases in the beam length increase sensitivity. For a fixed beam thickness, a maximum sensitivity exists for appropriate PZT/Si thickness ratio. In addition, it is found that with appropriate geometrical dimensions, both high sensitivity and broad frequency bandwidth can be achieved. The calculation of the stress distribution in the suspended PZT/Si beam structure when the device is subjected to large vibrational acceleration indicates that the thin film microaccelerometer can stand extremely large g conditions with very good mechanical reliability. In the dynamic analysis, it is found that both analytical model and finite element modeling give very close results of the resonance frequency of the device. The results of this study can be readily applied to on-chip piezoelectric microaccelerometer design and its structural optimization.

Free-Standing Lead Zirconate Titanate Nanoparticles: Low-Temperature Synthesis and Densification

Abstract: Nanocrystalline lead zirconate titanate (PZT) powder with an average particle size between 70 and 110 nm was synthesized using the citrate nitrate (C/N) autocombustion method. Phase-pure perovskite...

Photo-electromotive-force effect in semiconductors

Abstract: Publisher Summary This chapter discusses the main areas of possible applications of adaptive photo-electromotive-force (EMF) detectors—particularly the use of a gallium arsenide (GaAs) photo-EMF detector-based interferometric configuration to measure electro-optic coefficients in thin ferroelectric lead zirconate titanate (PZT) films. High-frequency utilization of GaAs photo-EMF detectors is demonstrated in the chapter where these photodetectors were used to mix two optical beams. The main goal of doing so was to generate output radio frequency (RF) signals in the gigahertz region with the phase manipulated by optical means, which were used to drive the phase array antenna. Various important practical applications of these original photodetectors are also demonstrated in the chapter, and one of them—namely, an adaptive photo-EMF-based detection system for laser ultrasonic applications in real industrial environment—has been commercialized. With regard to 2D light intensity patterns, the photo-EMF detector works like a matched detector of transverse (i.e., in-plane) displacements.

Preparation and Properties of Piezoelectric Lead Zirconate Titanate Thin Films for Microsensors and Microactuators by Sol-Gel Processing

Abstract: PZT thin films for microsensors and microactuators were prepared from lead acetate and zirconium, titanium alkoxide solution by sol-gel processing. High-performance, crack-free, thin (3.1μm) films were acquired by multiple coating, and high-temperture annealing.PbO evaporation occurred on firing. This is caused by the lack of Pb and the structure is divided into a perovskite phase and the amorphous and/or nanocrystal regions. The existence of the amorphous and/or nanocrystal region reduces the dielectric and piezoelectric constants. Excess Pb diminishes the amorphous and/or nanocrystal region and improves the piezoelectric and ferroelectric properties.A 20mol% Pb excess PZT film has good piezoelectric properties. The dielectric constant er, the piezoelectric constant d31 and the spontaneous polarization Ps are 1800, 30.0×10-2C/m2 and 39.2×10-12C/N, respectively. These values are similar to those of bulk PZT ceramics. This PZT film will be used in the fabrication of microactuators and microsensors.