scispace - formally typeset
Search or ask a question
Topic

Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.


Papers
More filters
Journal ArticleDOI
TL;DR: In this article, a ferroelectric field effect transistor with a SrRuxTi1−xO3 solid-solution channel layer and a lead zirconate titanate gate oxide has been fabricated.
Abstract: A ferroelectric field-effect transistor with a SrRuxTi1−xO3 solid-solution channel layer and a lead zirconate titanate gate oxide has been fabricated. The remnant polarization of the ferroelectric yields two states at 0 V, which produce a relative change in channel resistance (ΔR/R) of 75% and a coercivity of 3 V. The channel has sufficient off-state free carrier concentration to provide sufficient balancing charge for ferroelectric stability. The device was subjected to more than 1010 read-write cycles with no degradation. This nonvolatile device offers the possibility of a nondestructive, current sense memory cell with good retention properties.

43 citations

Journal ArticleDOI
TL;DR: In this article, the authors explored the nature of extrinsic point defects in lead zirconate titanate (PZT) ceramics of various compositions prepared by solution chemistry.
Abstract: Ferroelectric Pb(Zr,Ti)O{sub 3} (PZT) thin-film dielectrics are an emerging technology for semiconductor nonvolatile memories. Ferroelectric thin-film capacitors appear to have significant advantages with respect to endurance, write speed, and nonvolatility over polysilicon-nitride-oxide-silicon devices. The nature of extrinsic point defects in lead zirconate titanate (PZT) ceramics of various compositions prepared by solution chemistry has been explored. Using electron paramagnetic resonance (EPR), several impurity sites have been identified in the as-received materials, which include Fe{sup 3+}--oxygen vacancy (V{sub o}) complex and isolated Cu{sup 2+} ions; both of these ions are incorporated into the lattice by replacing the Ti (Zr) ion. A Fe{sup 3+}--V{sub o} complex serves as a sensitive probe of the local crystalline field environment of the ceramic; the symmetry of this defect is roughly correlated with its phase diagram as the composition is varied from PbTiO{sub 3} to PbZrO{sub 3}. The Fe{sup 3+}--V{sub o} complex experiences tetragonal, rhombic, or orthorhombic symmetry as the composition is varied from PbTiO{sub 3} to PbZrO{sub 3}. As the composition of the Cu{sup 2+} ion is varied, it appears as though the addition of Zr, and not necessarily a change in phase, is largely responsible in determining the local environment of this acceptor impurity. Also,more » the Cu{sup 2+} resonance parameters weakly reflect the relative Ti-O (Zr-O) bond covalency in the perovskite lattice.« less

43 citations

Journal ArticleDOI
TL;DR: In this article, the structure properties of lead zirconate titanate have been investigated as a function of the concentration of lower-valent A-site substitution and the dielectric response with increasing K 1+ concentration.
Abstract: Studies of the structure‐property relationships have been performed for lead zirconate titanate as a function of concentration of a lower‐valent A‐site substitution. Investigations focused on the system (Pb1−yKy)(Zr0.65Ti0.35)O3−y/2 for 0

43 citations

Journal ArticleDOI
TL;DR: In this article, a triol-based sol-gel system was developed for the fabrication of thin films of lead zirconate titanate (PZT) for spin coating purposes.
Abstract: A triol-based sol–gel system has been developed for the fabrication of thin films of lead zirconate titanate (PZT). Starting reagents were lead acetate, zirconium and titanium isopropoxides, acetylacetone, and 1,1,1-tris(hydroxymethyl)ethane (THOME), with 2-methoxyethanol (MOE) being used to dilute the sols for spin coating purposes. Preliminary characterization by NMR spectroscopy suggested that the gels consisted of the metal ions and bound THOME, acetylacetonate, and acetate residues, with some possible M–O–M bridges. Uncracked 0.4 μm single-layer PZT films of nominal composition PbZr0.53Ti0.47O3 were prepared on platinized substrates. Dielectric and ferroelectric properties were determined for samples made from sols containing 10 and 15 mol% excess lead acetate. Improved values were obtained for samples made from sols containing the higher excess; these exhibited a remanent polarization of 34 μC·cm−1, a coercive field of 54 kV·cm−1, and a relative permittivity of 1000.

43 citations

Journal ArticleDOI
TL;DR: In this paper, a fast partial unloading method is used to measure the material properties of unpoled soft PZT under pure electric field and of initially pre-poled soft lead zirconate titanate (PZT) under compressive stress loading.
Abstract: Experimental work is aimed at systematically investigating the non-linear ferroelectric and ferroelastic behavior of a commercially available soft lead zirconate titanate (PZT) material. The fast partial unloading method is used to measure the material properties of unpoled soft PZT under pure electric field and of initially pre-poled soft PZT under compressive stress loading. In the first experiment using unpoled PZT, the evolution of piezoelectric constants and dielectric permittivity is determined as a function of electric field. It is found that the piezoelectric constants and dielectric permittivity depend on the electric field history. The results are used to separate the reversible strain and polarization from the irreversible ones caused by domain switching. In the second experiment using initially pre-poled PZT, it is found that the strain response is significantly dependent on the stress loading rate. The elastic moduli and piezoelectric coefficients are evaluated with respect to the compressive stress history. The measured longitudinal and transverse irreversible strains change significantly during both loading and unloading processes. An attempt is made to discuss the use of irreversible strain and irreversible polarization as internal variables for constitutive modeling. This investigation provides valuable information for modeling to predict the performance and for improving the reliability of piezoelectric devices.

43 citations


Network Information
Related Topics (5)
Thin film
275.5K papers, 4.5M citations
91% related
Dielectric
169.7K papers, 2.7M citations
87% related
Amorphous solid
117K papers, 2.2M citations
86% related
Silicon
196K papers, 3M citations
86% related
Carbon nanotube
109K papers, 3.6M citations
85% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023116
2022267
2021168
2020180
2019189
2018206