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Lead zirconate titanate
About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.
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TL;DR: In this paper, an acoustic emission (AE) sensor was fabricated using polarized polyvinylidene fluoride/trifluoroethylene (P(VDF-TrFE)) piezoelectric copolymer films.
Abstract: Acoustic emission (AE) sensors have been fabricated using polarized polyvinylidene fluoride/trifluoroethylene (P(VDF-TrFE)) piezoelectric copolymer films. The acoustic and electromechanical properties of the copolymers have been determined using the ultrasonic immersion technique and the resonance technique, respectively. The P(VDF-TrFE) AE sensors have been calibrated according to the ASTM standard and evaluated for potential application in the detection of AE in glass fiber reinforced polypropylene (GFPP). A ceramic AE sensor also has been fabricated using lead zirconate titanate (PZT) 7A piezoelectric ceramic and its sensitivity and performance are reported as well. The copolymer sensors do not show resonance peaks of the ceramic sensor and have adequate sensitivity. They can reproduce AE signals accurately without giving artifacts and have potential use in commercial AE systems.
42 citations
TL;DR: In this paper, the electrical resistivity of the lead zirconate titanate (PZT) layer was determined to be 5×108 Ω cm, with a transition width of 1 K.
Abstract: Ferroelectric/superconductor PbZr0.52Ti0.48O3/Y1Ba2 Cu3O7−x heterostructures have been grown on single‐crystal LaAlO3 in a Nd:YAG pulsed laser deposition system. The cuprate superconductor is used as the metallic electrode for polarizing the lead zirconate titanate (PZT) layer. X‐ray diffraction and rocking curve data evidence almost epitaxial growth of both the PZT (≊4500 A) and the (YBCO) (≊2500 A) layers on LaAlO3 substrates. Ferroelectric measurements yield remnant polarization values (at 177 kV/cm) of 29 μC/cm2, and coercive fields in the range of 70–85 kV/cm. The electrical resistivity of the PZT layer is determined to be 5×108 Ω cm. The electrical resistivity data for the YBCO underlayer even in the presence of the PZT overlayer yields Tc=89.5 K with a transition width of δT=1 K. In summary, excellent characteristics of coexisting superconducting and ferroelectric properties have been achieved in laser deposited PZT/YBCO/LaAlO3 heterostructures. As far as we know this is the first time such a resul...
42 citations
TL;DR: In this article, the electrical impedance and modulus properties of polycrystalline materials were studied in a wide range of temperatures at different frequencies and the impedance analysis indicates the presence of bulk resistive contributions in the materials which is found to decrease on increasing temperature.
Abstract: The polycrystalline samples of Pb1−xSmx(Zr0.60Ti0.40)1−x/4O3 (PSZT) where x=0.00, 0.03, 0.06 and 0.09 were prepared by a high-temperature solid-state reaction technique. The preliminary structural analysis using X-ray diffraction (XRD) data collected at room temperature has confirmed the formation of single-phase compounds in tetragonal crystal system. The morphological study of each sample using scanning electron microscope (SEM) has revealed that the grains are uniformly distributed through out the surfaces of the samples. Using complex impedance spectroscopy (CIS) technique, the electrical impedance and modulus properties of the materials were studied in a wide range of temperatures at different frequencies. The impedance analysis indicates the presence of bulk resistive contributions in the materials which is found to decrease on increasing temperature. The nature of variation of resistances with temperature suggests a typical negative temperature coefficient of resistance (NTCR) type behavior of the materials. The complex modulus plots clearly exhibits the presence of grain boundaries along with the bulk contributions in the PSZT materials. The presence of non-Debye type of relaxation has been confirmed by the complex impedance analysis. The variation of dc conductivity (bulk) with temperature demonstrates that the compounds exhibit Arrhenius type of electrical conductivity.
42 citations
TL;DR: In this article, a sensor based on magnetoelectric effect is presented, which is an alternative to semiconductor sensor and sensor on hermetic contacts, which represents the disk or plate from the magneto-lectric material with two electrodes for connecting to the voltage meter.
Abstract: As an alternative to semiconductor sensor and sensor on hermetic contacts we present sensor based on magnetoelectric effect. In researches there are used the magnetoelectric bulk composites containing 95% of yttrium-iron garnet and 5% of lead zirconate titanate (PZT) and multilayer composite material consisting of PZT and Ni 0.5 Zn 0.5 Fe 2 O 4 . The magnetoelectric sensor represents the disk or plate from the magnetoelectric material with two electrodes for connecting to the voltage meter. The action of the sensor is based on magnetoelectric interaction. The experimental model was made for determining the basic parameters of the magnetoelectric sensor and optimization of its design.
42 citations
TL;DR: In this paper, dense lead zirconate titanate (PZT) films in the thickness range of 2-100 µm were fabricated by the aerosol deposition method (ADM) to study the thickness dependence of the ferroelectric characteristics.
Abstract: Dense lead zirconate titanate (PZT) films in the thickness range of 2–100 µm were fabricated by the aerosol deposition method (ADM) to study the thickness dependence of the ferroelectric characteristics. The recovery of ferroelectricity by annealing is uniform inside a thick PZT film. Breakdown electrical field increased with decreasing thickness of the film and was over 1 MV/cm for a 4-µm-thick PZT film. Increase of the internal stress for thinner PZT films led to the increase of the coercive field and breakdown electrical strength.
42 citations