Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.

Synthesis of Lead Zirconate Titanate Stannate Antiferroelectric Thick Films by Sol‐Gel Processing

Abstract: The effects of different sintering procedures on the preparation of antiferroelectric thick films and the structure–property relations in these films were studied. An acetic acid-based sol–gel processing with multistep annealing and suitable lead oxide overcoat layers was developed to fabricate both niobium-doped and lanthanum-doped lead zirconate titanate stannate antiferroelectric thick films. The 5-μm-thick Pb0.99Nb0.02(Zr0.85Sn0.13Ti0.02)0.98O3 films demonstrate typical square hysteresis loops with a maximum polarization of 40 μC/cm2, zero remanent polarization, an antiferroelectric-to-ferroelectric phase transition field of 153 kV/cm, and a ferroelectric-to-antiferroelectric phase transition field of 97 kV/cm. The dielectric constant and dielectric loss are 283 and 1.7%, respectively. The 5-μm-thick Pb0.97La0.02(Zr0.65Sn0.31Ti0.04)O3 films display typical slanted hysteresis loops with very small hysteresis, a maximum polarization of 35.0 μC/cm2, and zero remanent polarization. The dielectric constant and dielectric loss are 434 and 2.0%, respectively.

Bi(Ni1/2Zr1/2)O3-PbTiO3 relaxor-ferroelectric films for piezoelectric energy harvesting and electrostatic storage

Abstract: In this Letter, we demonstrated that both a high energy-storage density and a large piezoelectric response can be attained simultaneously in relaxor-ferroelectric 0.4Bi(Ni1/2Zr1/2)O3-0.6PbTiO3 films prepared by chemical solution deposition. The as-prepared films had a pure-phase perovskite structure with an excellent crystalline morphology, featuring a moderate relative permittivity ( er ∼ 800–1100), a low dissipation factor ( tan δ < 5%) and strong relaxor-like behavior ( γ = 1.81). An ultra-high energy-storage density of 39.8 J/cm3 at 2167 kV/cm was achieved at room temperature. Moreover, the 0.4Bi(Ni1/2Zr1/2)O3-0.6PbTiO3 films exhibited a considerably large effective piezoelectric coefficient of 83.1 pm/V under substrate clamping, which is comparable to the values obtained for lead zirconate titanate films. Good thermal stabilities in both the energy-storage performance and the piezoelectric properties were obtained over a wide range of temperatures, which makes 0.4Bi(Ni1/2Zr1/2)O3-0.6PbTiO3 films a...

Properties of Sr- and Sb-doped PZT–Portland cement composites

Abstract: Lead zirconate titanate (PZT) ceramic-cement-based composites have increasingly been recognized as an attractive new composite material for use as a sensor in structural applications. In this work, PZT was doped with Sr and Sb (PSZT) to give it greater dielectric constant (er) and higher piezoelectric coefficient (d33) values than normal PZT and is the first time that it is mixed with normal Portland cement to produce a 0–3 connectivity PSZT–Portland cement composite using PSZT contents of 50% and 70% by volume. Scanning electron micrographs show PSZT ceramic particles closely surrounded by the hydrated cement matrix where a dense microstructure can be observed in the interfacial zone. Both the er and d33 values were found to increase with PSZT content and the values are amongst the highest so far for these types of composites, where the er and d33 values reached 590 and 48 pC/N, respectively.

Microstereolithography of lead zirconate titanate thick film on silicon substrate

Abstract: The microstereolithography mSL of lead zirconate titanate PZT thick films on platinum-buffered silicon substrates is reported for . the first time in this paper. Crack-free PZT thick films 80-130 mm thick have been fabricated by laser direct-write UV polymerization from the HDDA-based UV curable PZT suspensions. The characterization of the fired films shows dielectric permittivities of 120-200, 2 . tangent loss of 0.92-2.5% and remnant polarization of 0.9-1.7 mCrcm . The field-induced longitudinal piezoelectric coefficient d of 33 . y3 an 84-mm thick film is 100 pCrN and the piezoelectric voltage coefficient g is about 59.5 = 10 V mrN. These results 33 demonstrated the potential for mSL of advanced piezoelectric microsensors and microactuators. q 2000 Elsevier Science B.V. All rights reserved.

Structural, electrical and mechanical properties of magnetron sputtered NiTi/PZT/TiOx thin film heterostructures

Abstract: Shape memory alloy (NiTi) thin films coupled to ferroelectric lead zirconate titanate (PZT) produce an intelligent material capable of performing both sensing and actuating functions. In the present study, we report on the in-situ growth of NiTi/PZT/TiOx heterostructure on Pt/Ti/SiO2/Si substrates using magnetron sputtering technique. Deposition processing, microstructure, surface morphology, electrical properties and mechanical properties of these heterostructures were systematically investigated. The top NiTi films exhibit austenitic B2 structure with preferred (110) orientation. The varying thickness of NiTi films had a significant influence on properties of NiTi/PZT/TiOx heterostructure. The bottom TiOx layer was observed to favor the growth of perovskite PZT films with (100) orientation. Nanoindentation tests of these heterostructures were performed at room temperature. The mechanical hardness of the top NiTi layer of lower thickness was found to be highly influenced by underneath PZT layer. The heterostructure exhibited an interesting martensite to austenite phase transformation and polarization-electric field hysteresis behavior with remanent polarization (Pr) and the coercive field (Er) of 17.1 μC/cm2 and 69.6 kV/cm, respectively. These heterostructures having a layer of SMA material coupled to a ferroelectric material with underneath TiOx layer are of immense technological importance for MEMS devices.