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Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.


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Journal ArticleDOI
23 Mar 2011-ACS Nano
TL;DR: A strategy for integrating nanoribbons of one of the most widely used ferroelectric ceramics, lead zirconate titanate, in "wavy" geometries, on soft, elastomeric supports to achieve reversible, linear elastic responses to large strain deformations, without any loss in ferro electric or piezoelectric properties is reported.
Abstract: Applications of ferroelectric ceramics, ranging from components for sensors, memory devices, microelectromechanical systems, and energy convertors, all involve planar and rigid layouts. The brittle nature of such materials and their high-temperature processing requirements limit applications to devices that involve only very small mechanical deformations and narrow classes of substrates. Here, we report a strategy for integrating nanoribbons of one of the most widely used ferroelectric ceramics, lead zirconate titanate, in “wavy” geometries, on soft, elastomeric supports to achieve reversible, linear elastic responses to large strain deformations (i.e., stretchable properties), without any loss in ferroelectric or piezoelectric properties. Theoretical and computational analysis of the mechanics account for these characteristics and also show that the amplitudes of the waves can be continuously tuned with an applied electric field, to achieve a vertical (normal) displacement range that is near 1000 times l...

194 citations

Journal ArticleDOI
TL;DR: In this article, two materials were used as memory cells: potassium nitrate (KNO3) and lead zirconate titanate (PbZr0.54Ti0.46O3).
Abstract: Ferroelectric thin‐film (200–350 nm) memories were fabricated and tested. Two materials were used as memory cells: potassium nitrate (KNO3) and lead zirconate titanate (PbZr0.54Ti0.46O3, usually abbreviated as PZT). These devices were tested as arrays deposited either by thermal evaporation (in the case of KNO3) or sputtered films (PZT). Fully packaged devices were tested to determine switching speed and polarization (switched charge) as functions of temperature and applied voltage. Radiation hardness was also tested for both dose rate and total dose. The switching kinetics were investigated in considerable detail and found to confirm the theory of Ishibashi. The dimensionality of domain growth for the switching process in KNO3 lowers from 2.3 before irradiation to 1.6 after 0.5 Mrad. For PZT rad hardness exceeds 5 Mrad total dose and 2×1011 rad/s. A surprising result was that the hysteresis curves for all of the PZT samples became more symmetric after 5 Mrad irradiation; this is interpreted as a destruct...

193 citations

Journal ArticleDOI
TL;DR: In this article, the authors used scanning force microscopy (SFM) for the determination of friction, phase transformation, and piezoelectric behavior of lead zirconate titanate (PZT) films.
Abstract: Scanning force microscopy (SFM) has been used for the determination of friction, phase transformation, piezoelectric behavior (in the contact mode), polarization state, and dielectric constant (in the noncontact mode) of nanometer regions of lead zirconate titanate (PZT) films. The use of the SFM tip in the contact mode, to polarize different nanoregions of the PZT film and to apply an oscillating field thereon, led to effective piezoelectric coefficients and piezoelectric loops. The measured effective piezoelectric coefficient was shown to depend appreciably on both the tip contact force and the quality of the tip-to-film electrical contact. In the noncontact mode, application of an ac signal (with a frequency ω) across the tip—PZT film—electrode system produced an oscillation of the tip at frequencies ω (fundamental or first harmonic) and 2ω (second harmonic). The signals at ω and 2ω were related to the state of polarization and the dielectric constant of the PZT film, respectively. Analysis of the comb...

191 citations

Journal ArticleDOI
TL;DR: In this paper, a simple and inexpensive method for evaluating the transverse piezoelectric coefficient (d 31 ) of PZT thin films is described. The technique is based upon the flexure of a coated substrate, which imparts an ac two-dimensional stress to the PZE. The surface charge generated via the mechanical loading is converted to a voltage by an active integrator.
Abstract: This paper describes a simple and inexpensive method for evaluating the transverse piezoelectric coefficient ( d 31 ) of piezoelectric thin films. The technique is based upon the flexure of a coated substrate which imparts an ac two-dimensional stress to the piezoelectric film. The surface charge generated via the mechanical loading is converted to a voltage by an active integrator. Plate theory and elastic stress analyses are used to calculate the principal stresses applied to the film. The d 31 coefficient can then be determined from knowledge of the electric charge produced and the calculated mechanical stress. For 52/48 sol-gel lead zirconate titanate (PZT) thin films, the d 31 coefficient was found to range from − 5 to − 59 pC/N and is dependent on poling field.

191 citations

Journal ArticleDOI
TL;DR: In this paper, a dc planar magnetron sputtering was used to grow lead zirconate titanate [Pb(Zr,Ti)O3 or PZT] thin films.
Abstract: Lead zirconate titanate [Pb(Zr,Ti)O3 or PZT] thin films have been grown by sputtering a multi‐element metal target in oxygen using dc planar magnetron sputtering. Growth parameters and annealing conditions have been optimized. The kinetics of reactive sputtering and the implications of sputtering parameters on film composition have been studied. The studies reveal the requirement for operation at low substrate temperatures (200 °C), high sputtering pressures (4–5 Pa), and a large substrate‐to‐target distance (10 cm) for obtaining good control over composition. The structural and electrical properties of films were found to depend on the compositional ratio of Zr/Ti, similar to that observed in bulk PZT ceramics. Films having a resistivity of 1010 Ω cm and a dielectric constant e’∼820 at room temperature (300 K) have been achieved. Ferroelectric hysteresis loop measurements indicated a remanent polarization of 30.0 μC/cm2 and coercive field of 25 kV/cm for the rhombohedral phase composition (Zr/Ti=58/42). ...

190 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023116
2022267
2021168
2020180
2019189
2018206