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Lead zirconate titanate
About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.
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TL;DR: Pb(Zrx,TiOx,Ti1−x)O3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)∕TiOx∕SiO2 ∕Si substrates.
Abstract: Pb(Zrx,Ti1−x)O3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)∕TiOx∕SiO2∕Si substrates The gradient in B-site composition as obtained by standard routes could be lowered, reducing Zr concentration fluctuations form ±12to±25at% The 2μm thick, dense and crack-free films exhibited a {100}-texture index of 984% Grain diameters increased by 50% Dielectric and piezoelectric properties were remarkably improved The relative dielectric constant e33,f was obtained as 1620, and the remanent transverse piezoelectric coefficient e31,f was measured as −177Cm2
148 citations
TL;DR: In this paper, a metastable Pt3Pb intermetallic phase has been identified, and the formation of this metastable phase was found to depend on the drying temperature, the thickness of the as-deposited film, annealing temperature, and anneal time.
Abstract: Pyroelectric lead zirconate titanate (PZT) thin films have been prepared by a sol-gel method and characterized by x-ray diffraction and transmission electron microscopy (TEM). A metastable Pt3Pb intermetallic phase has been identified. The formation of this metastable phase was found to depend on the drying temperature, the thickness of the as-deposited film, annealing temperature, and annealing time. Perovskite PZT was found to nucleate on top of the intermetallic phase, rather than directly on Pt. The improved lattice match between the intermetallic (a0=4.05 A) and perovskite PZT(a0=4.035 A) as compared to between Pt(a0=3.9231 A) and the perovskite is believed to substantially reduce the activation energy for the nucleation of perovskite on Pt. Using this effect, (111) perovskite PZT has been grown at a temperature as low as 440 °C. The formation of the intermetallic phase is believed to facilitate the (111) film orientation. The growth kinetics of the PZT were analyzed using the Avrami model, and from ...
147 citations
Patent•
19 Jan 1995
TL;DR: In this paper, the sub-insulating layer of an electronic device using PZT or PLZT as the main insulating material is formed on a sub-involving layer consisting essentially of lead titanate, lanthanum lead zirconate titanate or barium titanate.
Abstract: In an electronic device using lead zirconate titanate (PZT) or lanthanum lead zirconate titanate (PLZT) as the main insulating material, a PZT film or a PLZT film is formed on a sub-insulating layer consisting essentially of lead titanate, lanthanum lead titanate, barium titanate, strontium titanate, barium strontium titanate, lead zirconate, or lanthanum lead zirconate. In an MIS structure, a semiconductor, the sub-insulating layer, the PZT film and metal are deposited in order. In a capacitor, the sub-insulating layer and the PZT film are sandwiched between a pair of electrodes. The sub-insulating layer improves crystallinity of PZT or PLZT, and the dielectric constant. An oxide of Pb, La, Zr or Ti can be added as the sub-insulating layer in order to further suppress current leakage.
146 citations
TL;DR: In this article, the growth orientation in the Pt film is induced by depositing it on a thin c-axis oriented bismuth titanate template layer which was previously grown on the SiO2/Si substrate.
Abstract: We demonstrate the growth of c‐axis oriented La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O ferroelectric capacitor heterostructures on a highly [001] oriented Pt film which was grown on a thermally oxidized Si (SiO2/Si) substrate. The [001] growth orientation in the Pt film is induced by depositing it on a thin c‐axis oriented bismuth titanate template layer which is previously grown on the SiO2/Si substrate. The test capacitors show saturation and remnant polarization values comparable with that obtained on single‐crystal LaAlO3 substrates. The use of a Pt layer reduces the sheet resistance of the bottom electrode stack by at least 3–5 times. Since the Pt layer is strongly [001] oriented, it favors the growth of [001] La‐Sr‐Co‐O (LSCO) and lead zirconate titanate layers. The use of the LSCO top and bottom electrodes in contact with the ferroelectric thin film provides the resistance to bipolar fatigue, consistent with our earlier results.
146 citations
TL;DR: The microstructure and preferred orientations of rapid thermally annealed Pb(Zr0.53, Ti0.47)O3 films, deposited on Pt/Ti/SiO2/Si electrode/substrates by solution-gel spinning, have been investigated using analytical and high-resolution electron microscopy and X-ray diffraction as mentioned in this paper.
Abstract: The microstructure and preferred orientations of rapid thermally annealed Pb(Zr0.53, Ti0.47)O3 films, deposited on Pt/Ti/SiO2/Si electrode/substrates by solution-gel spinning, have been investigated using analytical and high-resolution electron microscopy and X-ray diffraction. The temperature of pyrolysis of the PZT filMS was found to influence the preferred orientation of the film: lower temperatures (350-degrees-C) favored a (111) orientation, whereas higher temperatures (420-degrees-C) favored a (100) orientation. Excess Pb was used to control the A-site stoichiometry of the film particularly at the film surface where Pb-deficient crystals could often be observed. The absence of these crystals was shown to be correlated with an improvement in the dielectric response.
146 citations