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Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.


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Journal ArticleDOI
TL;DR: In this article, the synthesis and characterization of ferroelectric lead zirconate titanate PbsZr0.53Ti0.47dO3 (PZT) nanowires were reported.
Abstract: We report the synthesis and characterization of ferroelectric lead zirconate titanate PbsZr0.53Ti0.47dO3 (PZT) nanowires. The PZT nanowires, with diameters of about 45 nm and lengths of about 6 mm, were fabricated by means of a sol-gel method utilizing nanochannel alumina templates. After postannealing at 700 ° C, the PZT nanowires exhibit a polycrystalline microstructure, and x-ray diffraction and transmission electron microscopy study revealed their perovskite crystal structure. The piezoelectric characteristics of individual PZT nanowires were demonstrated by piezoresponse force microscopy. © 2004 American Institute of Physics .

146 citations

Journal ArticleDOI
TL;DR: In this article, the porosity of lead zirconate titanate (PZT) and lanthanum-doped PZT ferroelectric ceramics was found to cause electric fatigue.
Abstract: Electric fatigue, namely the decay of the polarization and the consequent elastic strain with increased number of switching cycles under high a.c. field, severely limits the applications of ferroelectric and piezoelectric materials in high-strain electro-mechanical actuators and in thin films used in non-volatile memory devices. Electric fatigue tests have been conducted on lead zirconate titanate (PZT) and lanthanum-doped lead zirconate titanate (PLZT) ferroelectric ceramics. It was found that electric fatigue can be initiated by various factors, the porosity being one of them. Electric fatigue occurred in low-density(93%–97%) PLZT 7/65/35 ceramics after 104 switching cycles, while the high-density (>99%) PLZT specimens of the same composition did not fatigue after 109 switching cycles. It was also observed that for PZT ceramics, fatigue proceeded much more slowly in the samples with higher density (∼98%) than those with lower densities (92%–96%). A tentative explanation for the origin of the fatigue mechanism associated with porosity is proposed.

145 citations

Journal ArticleDOI
TL;DR: In this article, the effect of misfit strain on the microstructure and properties of ferroelectric lead zirconate titanate thin films was studied by varying the film thickness and the thickness effect on domain formation of epitaxial PbZr02Ti08O3 (PZT) films.
Abstract: We have studied the effect of misfit strain on the microstructure and properties of ferroelectric lead zirconate titanate thin films We have changed the misfit strain by varying the film thickness and studied the thickness effect on the domain formation of epitaxial PbZr02Ti08O3 (PZT) films grown by pulsed laser deposition on (001) LaAlO3 substrates with La05Sr05CoO3 (LSCO) electrodes The nominal thickness of the PZT films was varied from 60 to 400 nm with the LSCO electrode thickness kept constant at 50 nm X-ray diffraction experiments show that the films relax via the formation of a domains, the fraction of which increase with the ferroelectric film thickness The c-axis lattice constant of PZT films calculated from the 002 reflection decreases with increasing film thickness and approaches the bulk value of ∼0413 nm in the films thicker than 300 nm Cross-sectional transmission electron microscopy images reveal that the a-domain fraction and period increase with increasing film thickness The relaxation of misfit strain in the film is accompanied by systematic changes in the polarization properties, as well as the switching fields, quantified by the coercive field and the activation field

145 citations

Journal ArticleDOI
TL;DR: In this article, a rapid thermal annealing (RTA) technique has been employed to process lead zirconate titanate (PZT) films prepared by reactive magnetron sputtering.
Abstract: A rapid thermal annealing (RTA) technique has been employed to process lead zirconate titanate (PZT) films prepared by reactive magnetron sputtering. The films were fabricated by dc sputtering a multielement metal target in an oxygen ambient at a substrate temperature of 200 °C. A subsequent postdeposition RTA at 600 °C for 5 s crystallizes the films into a perovskite‐type structure through various intermediate phases. Due to the short postdeposition processing times inherent in the RTA method, the initial nature of the as‐grown films has a critical influence on the crystallization kinetics. The reaction sequence in the formation of perovskite PZT from the films deposited at low substrate temperatures by the sputtering technique has been evaluated, and various key factors influencing the crystallization of PZT have been identified. As‐grown films are constituted of polycrystalline orthorhombic lead oxide in an amorphous matrix of titania and zirconia. During annealing lead oxide transforms into a cubic ph...

145 citations

Journal ArticleDOI
TL;DR: In this article, the phase diagram of lead-free piezoelectric KxNa1−xNbO3 has been studied, with particular focus on the proposed morphotropic phase boundaries, by powder and single crystal x-ray diffraction.
Abstract: The phase diagram of lead-free piezoelectric KxNa1−xNbO3 has been studied, with particular focus on the proposed morphotropic phase boundaries, by powder and single crystal x-ray diffraction. The tilt system and cation displacement has been mapped out as a function of temperature and composition, highlighting changes in the oxygen octahedra at x=0.2 and x=0.4 at room temperature. The orthorhombic to monoclinic boundary at x=0.5 has been investigated, with a subtle change in the structure observed. The conclusion is that KxNa1−xNbO3 does not display a morphotropic phase boundary comparable with that in lead zirconate titanate, and that the most significant structural change as a function of composition occurs at x=0.2 because of the change of the tilt system.

143 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023116
2022267
2021168
2020180
2019189
2018206