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Lead zirconate titanate
About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.
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TL;DR: It is shown that lead zirconate titanate thin films undergo local phase decomposition during fatigue, which is the generic reason for electrical fatigue in ferroelectrics.
Abstract: We show that lead zirconate titanate thin films undergo local phase decomposition during fatigue. The original remanent polarization of the fatigued film is completely restored after furnace annealing in an O2 atmosphere, following a significant regrowth of a perovskite phase from the pyrochlorelike structure. By comparing our data with other researchers' work on annealing of fatigued ferroelectric samples, we conclude that local phase separation is the generic reason for electrical fatigue in ferroelectrics. A fatigue model is proposed in order to interpret our experimental data.
138 citations
TL;DR: In this paper, a polarization-free high-crystallization polyvinylidene fluoride (PVDF) based piezoelectric nanogenerator (PENG) was developed as acceleration sensor with high sensitivity (2.405nA/s2 m−1) and excellent stability (97% remaining after 10000 cycles).
138 citations
TL;DR: In this paper, the integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature, is reported.
Abstract: Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.
137 citations
TL;DR: In this paper, the use of a thin Pt layer (100 A) deposited on the bottom RuO2 electrode to fabricate RuO 2/PZT/Pt/RuO2/(100)MgO capacitors has two important effects.
Abstract: Lead zirconate titanate, Pb(ZrxTi1−x)O3 or PZT, thin films grown on RuO2 electrodes by the sol‐gel process have excellent resistance to polarization fatigue, but they generally have two drawbacks. The films have high leakage currents and large property variation. In this letter we show that the use of a thin Pt layer (100 A) deposited on the bottom RuO2 electrode to fabricate RuO2/PZT/Pt/RuO2/(100)MgO capacitors has two important effects. It reduces capacitor leakage by two to four orders of magnitude and it significantly reduces the large property variation. In addition, these capacitors retain their excellent resistance to polarization fatigue which is characteristic of the RuO2/PZT/RuO2 heterostructure.
136 citations
TL;DR: The material properties of lead zirconate titanate (PZT) ceramics for operation in the thickness mode at frequencies as high as 80 MHz are reported and the minimum insertion loss is in good agreement with theory and is a marked improvement over the performance of polymer devices.
Abstract: The material properties of lead zirconate titanate (PZT) ceramics for operation in the thickness mode at frequencies as high as 80 MHz are reported. Each of the ceramics tested showed a reduction in k/sub t/ with increasing frequency. In a fine-grained PZT, values of k/sub t/ as high as 0.44 were measured at 80 MHz. The effects of grain size were also evident in the measurement of frequency dependent mechanical losses. Experimental and theoretical analysis of a 1 mm*1 mm, 45 MHz PZT transducer verified the validity of the measurements of the properties and demonstrated excellent insertion loss and bandwidth characteristics. The minimum insertion loss of -17.5 dB is in good agreement with theory and is a marked improvement over the performance of polymer devices. Details on the fabrication and testing of high frequency ceramic transducers are described. >
136 citations