Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.

Piezoelectric ultrasonic micromotor with 1.5 mm diameter

Abstract: A piezoelectric ultrasonic micromotor has been developed using a lead zirconate titanate (PZT) ceramic/metal composite tube stator that was 1.5 mm in diameter and 7 mm in length. The micromotor was operated in its first bending vibration mode (/spl sim/70 kHz), producing speeds from hundreds to over 2000 rpm in both rotational directions. The maximum torque-output was 45 /spl mu/N-m, which is far superior to previous PZT thin film-based micromotors. This micromotor showed good reliability and stability for more than 300 hours of continued operation.

Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System

Abstract: Silicon doped hafnium oxide was the material used in the original report of ferroelectricity in hafnia in 2011. Since then, it has been subject of many further publications including the demonstration of the world's first ferroelectric field-effect transistor in the state-of-the-art 28 nm technology. Though many studies are conducted with a strong focus on application in memory devices, a comprehensive study on structural stability in these films remains to be seen. In this work, a film thickness of about 36 nm, instead of the 10 nm used in most previous studies, is utilized to carefully probe how the concentration range impacts the evolution of phases, the dopant distribution, the field cycling effects, and their interplay in the macroscopic ferroelectric response of the films. Si:HfO2 appears to be a rather fragile system: different phases seem close in energy and the system is thus rich in competing phenomena. Nonetheless, it offers ferroelectricity or field-induced ferroelectricity for elevated annealing conditions up to 1000 °C. Similar to the measures taken for conventional ferroelectrics such as lead zirconate titanate, engineering efforts to guarantee stable interfaces and stoichiometry are mandatory to achieve stable performance in applications such as ferroelectric memories, supercapacitors, or energy harvesting devices.

Piezoelectric strain in lead zirconate titante ceramics as a function of electric field, frequency, and dc bias

Abstract: We have investigated the electromechanical response of piezoelectric ceramics as a function of the amplitude and frequency of large electric fields and studied the effects of dc bias fields In order to characterize the materials under these conditions, a ZMI 2000 laser interferometer system from Zygo Corp has been installed and modified to directly measure the strains of ferroelectric ceramics This system uses a heterodyne detection technique and has the advantages of phase detection, wide bandwidth, high stability, and easy optical alignment Our experiment has been used to determine the strain of lead zirconate titanate (PZT) ceramics as a function of electric fields and as a function of frequency in the low frequency range From these measurements the piezoelectric coefficients d33, d31, and d15 have been determined as a function of applied field and frequency In addition the dependence of the piezoelectric coefficients under an applied dc bias field has been studied under quasistatic and under res

Process for making sol-gel deposited ferroelectric thin films insensitive to their substrates

Abstract: A method for producing a thin film of a ferroelectric perovskite material having the steps of providing a first substrate; depositing a first layer of a sol-gel perovskite precursor material wherein the crystallization of this precursor material to the pervoskite phase is insensitive to the first substrate; depositing a second layer of a sol-gel perovskite precursor material wherein the crystallization is sensitive to the first substrate; and heat-treating the deposited layers to form ferroelectric perovskites. A heat treatment step to form perovskites may optionally follow the deposition of the first layer. The first layer of sol-gel perovskite precursor material is selected to produce a perovskite upon heat treatment of: lead titanate (PbTiO3), or strontium titanate (SrTiO3). The second layer of sol-gel perovskite precursor material is selected to produce a perovskite upon heat treatment of: lead zirconate titanate (Pb(Zr,Ti)O3), lead zirconate (PbZrO3), lead lanthanum titanate ((Pb,La)TiO3), lead lanthanum zirconate ((Pb,La)ZrO3), lead lanthanum zirconate titanate ((Pb,La)(Zr,Ti)O3), lead magnesium niobate (Pb(Mg1/3 Nb2/3)O3), lead zinc niobate (Pb(Zn1/3 Nb2/3)O3), barium titanate (BaTiO3), strontium barium titanate ((Sr,Ba)TiO3), barium titanate zirconate (Ba(Ti,Zr)O3), potassium niobate (KNbO3), potassium tantalate (KTaO3), or potassium tantalate niobate (K(Ta,Nb)O3).