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Lead zirconate titanate
About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.
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TL;DR: In this paper, the d31 coefficient of a number of sputtered lead zirconate titanate (PZT) thin films with thicknesses between 0.6 and 3 μm was analyzed.
Abstract: The wafer flexure technique was used to characterize the d31 coefficient of a number of sol–gel and radio frequency (rf) sputtered lead zirconate titanate (PZT) thin films with thicknesses between 0.6 and 3 μm. Typical d31 values for well-poled 52/48 sol–gel films were found to be between −50 and −60 pC/N. The rf sputtered films possessed large as-deposited polarizations which produced d31 coefficients on the order of −70 pC/N in some unpoled films. The subsequent poling of the material, in a direction parallel to the preferred direction increased the d31 coefficient to values of about −85 pC/N. The aging behavior of the d31 coefficient was also investigated. For sol–gel films the aging rate was found to be independent of poling direction and to range from 4% per decade for a 2.5 μm film to 8% per decade for a 0.6 μm film. In contrast, the aging rate of sputtered films was strongly dependent on poling direction, with maximum and minimum rates of 26% and 2% per decade recorded. These aging rates are very h...
123 citations
TL;DR: In this article, a thin film of antiferroelectric compositions in the lead zirconate titanate stannate family of solid state solutions has been fabricated by sol-gel methods on platinum-buffered silicon substrates.
Abstract: Thick (∼5 μm) films of antiferroelectric compositions in the lead zirconate titanate stannate family of solid state solutions have been fabricated by sol–gel methods on platinum-buffered silicon substrates. Dielectric properties, electric field induced ferroelectric polarization, and associated elastic strain and the temperature dependence of the dielectric response have been explored as a function of composition. Films with high tin content are shown to undergo a diffuse antiferroelectric–paraelectric phase transition with temperature, probably because of compositional inhomogeneity associated with the high tin content. This type of film also demonstrates a diffuse field-induced antiferroelectric–ferroelectric phase switching under high electric field with the appearance of “slim loop” double hysteresis, which can be attributed to the compositional heterogeneity and the high level of tensile stress in the film because of the thermal mismatch between the film and substrate. On the other hand, the film wit...
123 citations
TL;DR: The use of pyroelectric lead titanate thin films for infrared detection and integrated, piezoelectric lead zirconate titanate (PZT) thin film for actuator applications is discussed in this paper.
123 citations
TL;DR: In this paper, the authors measured the switching current upon removal of the applied electric field and showed that the obtained antiferroelectric thin films are very promising for decoupling capacitor applications in high speed multichip modules.
Abstract: The charge release speed and backward phase switching time of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films were investigated by directly measuring the switching current upon removal of the applied electric field. The backward switching time is about 6 ns. The maximum switching current density can reach 9400 A/cm2, and more than half of the stored charge can be released in 10 ns. These results show that the obtained antiferroelectric thin films are very promising for decoupling capacitor applications in high speed multichip modules.
123 citations
TL;DR: In this article, the fabrication of thin films of lead zirconate titanate (PZT) on platinum-buffered silicon substrates by screen printing was reported.
Abstract: This article reports the fabrication of thick films of lead zirconate titanate (PZT) on platinum‐buffered silicon substrates by screen printing. Crack‐free films, up to 12 μm on a single pass, show a dielectric permittivity of 200, tangent losses of 0.05, remanent polarization of 2.5 μC/cm2, and coercive field of 40 kV/cm. The field‐induced longitudinal piezoelectric coefficient d33 at 40 kV/cm dc bias and 4 kV/cm alternating field corresponded to 50 pC/N. The magnitude of the piezoelectric voltage coefficient g33, computed from the strain coefficient and dielectric permittivity, under the same conditions, was found to be 36×10−3 V m/N, higher than that of a poled PZT bulk ceramic in comparison. These results are promising for a broad variety of sensor applications.
122 citations