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Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, an approach for embedding high-permittivity dielectric thin films into glass epoxy laminate packages has been developed, where the capacitance density was 300-400 nF/cm2, and the loss tangent was 0.01-0.02 over a frequency range of 1-1000 kHz.
Abstract: An approach for embedding high-permittivity dielectric thin films into glass epoxy laminate packages has been developed. Lead lanthanum zirconate titanate (Pb0.85La0.15(Zr0.52Ti0.48)0.96O3, PLZT) thin films were prepared using chemical solution deposition on nickel-coated copper foils that were 50 μm thick. Sputter-deposited nickel top electrodes completed the all-base-metal capacitor stack. After high-temperature nitrogen-gas crystallization anneals, the PLZT composition showed no signs of reduction, whereas the base-metal foils remained flexible. The capacitance density was 300–400 nF/cm2, and the loss tangent was 0.01–0.02 over a frequency range of 1–1000 kHz. These properties represent a potential improvement of 2–3 orders of magnitude over currently available embedded capacitor technologies for polymeric packages.

98 citations

PatentDOI
TL;DR: In this paper, a tunable ultrasonic probe includes a body of a first piezoelectric material acoustically coupled in series with another body of another, relaxor ferroelectric material.
Abstract: A tunable ultrasonic probe includes a body of a first piezoelectric material acoustically coupled in series with a body of a second piezoelectric material. The second piezoelectric material has a Curie temperature that is substantially different than that of the first piezoelectric material. Preferably, the first piezoelectric material is a conventional piezoelectric ceramic, such as lead zirconate titanate, while the second piezoelectric material is a relaxor ferroelectric ceramic, such as lead magnesium niobate. At an operating temperature of the probe, the first piezoelectric material has a fixed polarization. In contrast, the second piezoelectric material has a polarization that is variable relative to the fixed polarization of the first piezoelectric material. A preferred novel arrangement of electrodes electrically couples the bodies in parallel with one another. An oscillating voltage for exciting the acoustic signals in the probe is coupled with the electrodes. The polarization of the second piezoelectric material is variably controlled by a bias voltage coupled with the electrodes. In a preferred embodiment, the bias voltage has a reversible electrical polarity for selecting one resonant frequency from a plurality of resonant frequencies of the probe. In another preferred embodiment, the bias voltage source has a variable voltage level for selecting at least one of a plurality of resonant frequencies of the probe.

98 citations

Journal ArticleDOI
TL;DR: In this paper, the electrical and acoustic properties of porous PZT ceramics were investigated, and the electrical properties were associated with porosity and the interconnection of pores, but only slightly associated with the shape of pores.

97 citations

Journal ArticleDOI
TL;DR: In this paper, a single-phase, low-loss, room-temperature multiferroic with magnetoelectric coupling was proposed, which combines x-ray scattering, magnetic and polarization hysteresis in both phases, plus a second-order dielectric divergence for an unambiguous assignment as a C2v-C4v (Pmm2-P4mm) transition.
Abstract: Mixing 60-70% lead zirconate titanate with 40-30% lead iron tantalate produces a single-phase, low-loss, room-temperature multiferroic with magnetoelectric coupling: (PbZr0.53Ti0.47O3) (1-x)- (PbFe0.5Ta0.5O3)x. The present study combines x-ray scattering, magnetic and polarization hysteresis in both phases, plus a second-order dielectric divergence (to epsilon = 6000 at 475 K for 0.4 PFT; to 4000 at 520 K for 0.3 PFT) for an unambiguous assignment as a C2v-C4v (Pmm2-P4mm) transition. The material exhibits square saturated magnetic hysteresis loops with 0.1 emu/g at 295 K and saturation polarization Pr = 25 μC/cm2, which actually increases (to 40 μC/cm2) in the high-T tetragonal phase, representing an exciting new room temperature oxide multiferroic to compete with BiFeO3. Additional transitions at high temperatures (cubic at T>1300 K) and low temperatures (rhombohedral or monoclinic at T<250 K) are found. These are the lowest-loss room-temperature multiferroics known, which is a great advantage for magnetoelectric devices.

97 citations

Journal ArticleDOI
TL;DR: In this article, the effect of standard photolithography and micromachining upon the printed lead zirconate titanate (PZT) layer has been investigated, in particular the adhesion of the printed layer to the substrate and its internal structure after exposure to each process.
Abstract: Thick-film printed lead zirconate titanate (PZT) structures can be combined with micromachined silicon structures and offer relatively large actuation forces compared to alternative techniques. This paper describes the initial investigation into the compatibility issues of micromachining silicon wafers with PZT layers printed on the surface. It assesses the effect of many standard photolithography and micromachining upon the printed PZT layer. In particular the adhesion of the printed layer to the substrate and its internal structure have been studied after exposure to each process. Standard photolithography using positive resists has been found to destroy the adhesion of the platinum electrode and an alternative masking technique using a thick-film printed dielectric polymer has been developed. Aluminium top electrodes have been fabricated using this masking technique combined with ion beam milling. Finally many standard micromachining etching processes have been carried out on a range of silicon substrates incorporating platinum electrode/thick-film PZT structures. Wet silicon and silicon dioxide etches were found to be unsuitable since they also attacked the adhesion of the bottom electrode. Plasma etching processes appear to be well suited for the combination of materials since there is a wide range of etches available that do not affect the PZT. These can therefore be used for the micromachining of the silicon substrate after thick-film processing greatly expanding the range of applications suited to this combination of technologies.

96 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023116
2022267
2021168
2020180
2019189
2018206