Lead zirconate titanate

About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.

Evaluation of domain wall motion in lead zirconate titanate ceramics by nonlinear response measurements

Abstract: Nonlinear response of pure and doped Pb(Zr1−xTix)O3 ceramics, with different compositions, has been analyzed in order to evaluate the domain wall motion in these materials. The study of dielectric and converse piezoelectric response shows a clear dependence of the domain wall mobility on the ferroelectric phase. Large lattice distortion in tetragonal samples produces a low mobility of the ferroelectric-ferroelastic domain walls. The influence of the type of defects on the nonlinear response has been explored. The results show that the relative increase of the domain walls mobility in donor-doped materials is greater than the decrease in acceptor-doped materials due to the pinning produced by complex defects. Rayleigh law has been used to evaluate the irreversible contribution of the domain walls movement to the nonlinear dielectric response. The analysis reveals that in presence of oxygen vacancies, the dielectric response cannot be attributed exclusively to the contribution of the irreversible domain wal...

Vibration-Level Characteristics of Lead-Zirconate-Titanate Ceramics

Abstract: Vibration-level characteristics of lead-zirconate-titanate ceramics were studied using the constant current driving method. It was found that resonant frequency and mechanical Q markedly decreased with increasing vibration level, accompanying heat generation. The heat generation was assumed to be caused by vibration loss. The vibration loss was reduced by doping Fe atoms to the ceramics. On the contrary, the vibration loss was increased by doping Nb atoms.

Influence of donor co-doping by niobium or fluorine on the conductivity of Mn doped and Mg doped PZT ceramics

Abstract: In this study, ac and dc conductivity measurements were performed under ambient atmosphere on doped lead zirconate titanate (PZT) ceramics in order to investigate the defect chemistry by identifying the predominant charge carriers. The considered compositions were acceptor (1% mol Mn or Mg) and donor (Nb or F) co-doped PZTs with [Donor] = 1 or 2% mol. The influence of donor concentration on the conductivity was determined. From the conduction activation energy values calculated in the temperature range 200–700 °C, the principal contributing charge carriers are doubly-ionized oxygen V O ¨ and lead vacancies VPb. For Mg doped PZTs, neither Nb nor F co-doping strongly reduce both conductivity levels and the dominant conducting species V O ¨ . For Mn doped materials, both donor co-dopants niobium and fluorine reduce the conductivity but do not have the same effect on the conduction mechanism at low temperature. With 2% Nb doping, the dominant conducting species are V O ¨ whereas electrical conduction is controlled by electrons from the second-ionization of oxygen vacancies with 2% F doping. The difference of oxygen vacancies content in (Mn, F) and (Mn, Nb) co-doped PZTs may be at the origin of the two distinct conducting species and of the different conductivity levels.

Electrical properties of piezoelectric sodium-potassium niobate

Abstract: Piezoelectric material is one of the most important components of the micro-electro mechanical system (MEMS). Most piezoelectrics have useful multi-functions for MEMS, e.g. sensor, actuator and transducer. An AFM cantilever, scanning mirror device and pumping system for a micro-chamber, are the typical applications of piezoelectric material on MEMS. Lead-based materials, e.g. lead zirconate titanate and lead lanthanum zirconate titanate, have been most popular among many piezoelectric materials. Recently alkali oxide materials, including potassium sodium niobate, have been given attention in view of their ultrasonic application and also as promising candidates for a piezoelectric non lead-based system. But this material system has been reported difficult to sinter only in the conventional method and it is possible to sinter by use of the hot isostatic press (HIP) method. In this report the synthesis process is, however, limited to the conventional solid state reaction method for the wide use of this material system. Several kinds of impurity doping into the base material is carried out in the sample preparation procedure. The physical, electrical properties and crystal structure of the several kinds of sodium-potassium niobate materials will be shown.

Effects of Titanium Buffer Layer on Lead-Zirconate-Titanate Crystallization Processes in Sol-Gel Deposition Technique

Abstract: Effects of the Ti buffer layer on crystallization processes of lead-zirconate-titanate (PZT) films by the sol-gel deposition technique were investigated. The Ti buffer layer was deposited on a Pt/TiN/SiO2/Si substrate by electron beam evaporation at the back-pressure of 1×10-11 Torr. Homogeneous crystalline PZT film of perovskite structure with fine grains were successfully obtained on the substrate with a Ti buffer layer. In contrast, a rosette-structure film which consists of large grains surrounded by a second phase was formed on a pure Pt surface. Ti existing at the interface between Pt and PZT acts as nuclei, and affects the growth of fine grains. Furthermore, leakage current density was drastically reduced from 5×10-5 A/cm2 to 6×10-9 A/cm2 at 4 V for 200-nm-thick film formed on a substrate with a buffer layer. Crystalline orientations and microstructures of PZT films were strongly dependent on the equivalent thickness of the buffer layer and there was an optimum thickness. When the equivalent thickness of the buffer layer was 2 nm, PZT showed -preferred orientation and a homogeneous film structure with fine grains on the -oriented Pt/SiO2/Si substrate.