Topic
Lead zirconate titanate
About: Lead zirconate titanate is a research topic. Over the lifetime, 7141 publications have been published within this topic receiving 150878 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, a material with piezoelectric coefficients similar to those of PZT (lead zirconate titanate, Pb[ZrxTi1-x]O3) has not been yet found.
Abstract: According to the EU-Directives 2002/95/EC, 2002/96/EC, lead-based piezoceramics must be substituted in the future with more environmentally friendly alternatives, only when a reliable alternative is found. This is why an increasing interest has grown in the research community to find lead free piezoelectric materials that fulfil the requirements for this substitution. Different families of compounds have been shown to be possible candidates for this use, such as bismuth and niobates based perovskites, pyrochlores, etc. However, a material with piezoelectric coefficients similar to those of PZT (lead zirconate titanate, Pb[ZrxTi1-x]O3) has not been yet found. Besides, each of these families has its specific characteristics in terms of remnant polarization, coercive field or application temperature. Thus, the choice of each material should be made according to the specific needs of the application. In this sense, Aurivillius-type structure materials (also known as Bismuth Layered Structure Ferroelectrics, BLSF) can take advantage of their specific properties for uses as Lead Free Piezoelectric systems. Some of them have a high Curie temperature, which make them good candidates to be used as high temperature piezoelectrics; high coercive fields, which facilitates their use as actuators; or a high switching fatigue resistance, which can be useful for future applications as Ferroelectric Random Access Memories (FERAM).
84 citations
TL;DR: In this paper, the effects of low-temperature processing on texture development were investigated. And the profound influence of low temperature processing steps, hitherto assumed benign from the viewpoint of texture development, was reported.
Abstract: The profound influence of low-temperature processing steps, hitherto assumed benign from the viewpoint of texture development, is reported. On inclusion of a 400°C step and further heat treatment at 700°C, PZT (40/60) sol-gel thin films with a strong (111) texture were obtained. When the 400°C step was excluded, the films exhibited a strong (100) texture. The (111) PZT texture development is nucleation-controlled and is attributed to the solid-phase epitaxial effect. The (100) texture is considered growth-controlled in that (100) oriented grains grow preferentially so as to minimize surface energy.
84 citations
TL;DR: In this paper, a method based on the use of four piezoelectric resonances for three sample geometries is presented that allows one to obtain all the dielectric permittivities, compliances, and pieziolectric coefficients of a piezoceramics in complex form and, therefore, all related losses.
Abstract: A method based on the use of four piezoelectric resonances for three sample geometries is presented that allows one to obtain all the dielectric permittivities, compliances, and piezoelectric coefficients of a piezoelectric ceramic in complex form and, therefore, all related losses. Piezoelectric losses are responsible for heat generation and hysteresis in actuators. The method is applied to a Navy type II PZT-based piezoelectric ceramic (PZT = lead zirconate titanate), for which the full set of linear electric, mechanical, and electromechanical coefficients is given in complex form. Full sets of coefficients for the available piezoceramics are required for exploiting all the possibilities of finite element analysis, both in fundamental research (mechanisms of degradation) and in development (element design). This numerical technique is necessary to explore arbitrary shapes provided by solid free-form-fabrication technologies.
84 citations
TL;DR: In this article, a 40-fold increase in the strength of magnetoelectric coupling was reported in layered samples of Ni1−xZnxFe2O4 (x=0.5) compared to bulk composites.
84 citations
TL;DR: In this article, the residual tensile stresses of three sol-gel derived Pb(Zr0.53Ti0.47)O3 thin film specimens of different thicknesses integrated onto Pt∕Ti∕SiO2‖Si substrates are investigated to delineate the influence of residual stress on the strain-field response characteristics from other thickness related effects.
Abstract: Piezoelectric properties of three sol-gel derived Pb(Zr0.53Ti0.47)O3 thin film specimens of different thicknesses integrated onto Pt∕Ti∕SiO2‖Si substrates are investigated to delineate the influence of residual stress on the strain-field response characteristics from other thickness related effects. Residual tensile stresses are determined from wafer curvature measurements for films ranging in thickness from 190to500nm. Field-induced strains are measured interferometrically for each film under either a large ac driving voltage or a small ac ripple applied over a range of dc biases. Higher residual stresses decrease measured piezoelectric response, while thickness variations with no accompanying change in residual stress state produce little change in strain-field behavior. The diminished performance associated with high residual stresses is attributed to reductions in both linear and nonlinear contributions, including decreased polarization switching and domain motion.
84 citations