Leakage (electronics)

About: Leakage (electronics) is a research topic. Over the lifetime, 32751 publications have been published within this topic receiving 312149 citations. The topic is also known as: leakage current & charge leakage.

Failure analysis mechanisms of miniaturized multilayer ceramic capacitors under normal service conditions

Abstract: The authors report on failure analysis results on miniaturized multilayer ceramic capacitors ('0402', '0603', '0805', and '1206' sizes) which have been subjected to various degrees of thermal shock up to 450/spl deg/C by ice-water or dry-ice quenching. The thermal shock resistance of '0402' multilayer ceramic capacitors is found to be about 400/spl deg/C and considerably better than that of the larger ones. Microstructural and layer-by-layer insulation resistance analyses have clearly identified the physical locations responsible for the electrical leakage of defective capacitors. No evidence of silver migration as a dominant failure mechanism has been observed for any of the defective capacitors under usual operating stresses. Comparisons of I-V characteristics for multilayer ceramic capacitors quenched by ice water and dry ice confirm that water plays a significant role in causing electrical failure at nominal bias. Failure mechanisms are then proposed to explain the failure of miniaturized multilayer ceramic capacitors under normal service conditions. >

Breaker for wiring provided with leakage alarm function

Abstract: PROBLEM TO BE SOLVED: To transmit the break of leakage to a remote monitor without fail, when performing the opening breaking action and the alarm output action at the same time by equipping a breaker with a leakage relay, which outputs a leakage alarm to an external device by a ground fault occurrence signal, and a delay circuit which opens an opening contact after passage of a specified delay time. SOLUTION: When a ground fault occurrence signal is outputted from a ground fault detecting circuit 5 in a state that a changeover switch 1 is closing the path, an electromagnetic tripper 6 is operated by delaying a ground fault occurrence signal with a delay circuit 16 and controlling a thyristor 17 to be electrically continuous. By setting the time when a leakage relay 8 can operate the delay time of a delay circuit 16 in advance, the control current of the leakage relay 8 from an AC electric path by the opening of an opening/closing contact 2 is does not become lost, and the leakage relay 8 can transmit the signal of the leakage break without fail via an alarm connector terminal 9. Moreover, the ground fault occurrence signal is not supplied at the same time to the thyristor 17 and a leakage relay driving thyristor 19, so that the output imposition of the ground fault detecting circuit 5 can be lightened. COPYRIGHT: (C)1998,JPO

Method and device for inspecting function of vessel, in particular, automobile tank ventilation device

Abstract: PROBLEM TO BE SOLVED: To improve furthermore a method and a device for detecting the function of an automobile tank ventilating device to completely prevent the emission. SOLUTION: A leakage diagnostic unit 60 with a pump 50 is mounted to diagnose the function of a tank ventilating device, and a switching valve 70 is mounted in front of the pump 50. A reference leakage 81 is mounted in parallel with the switching valve 70. The switching valve 70 has two switching positions I and II. The air-tightness is inspected by specifying whether the supply flow to be given to the tank ventilating device from the pump 50 is different from the supply flow existing in the application of negative pressure through the reference leakage or not, by measuring the electric current supplied to a pump motor.

Imaging method and apparatus based on magnetic fulx leakage testing

Abstract: An imaging method and an imaging apparatus based on a magnetic flux leakage testing. The imaging method includes: selecting an imaging region having a corrosion defect on a pipeline to be tested; dividing the imaging region into a plurality of grid areas; scanning by a three-dimensional sensor array the pipeline to be tested so as to obtain magnetic flux leakage testing data; creating a three-dimensional orthogonal coordinate system in the imaging region, defining a first two-dimensional matrix of defect images according to the plurality of grid areas based on the three-dimensional orthogonal coordinate system, and creating a second two-dimensional matrix of magnetic flux leakage signals according to the magnetic flux leakage testing data based on the three-dimensional orthogonal coordinate system; and mapping the second two-dimensional matrix to the first two-dimensional matrix using a pre-trained wavelet neural network so as to image the corrosion defect.

Epitaxial Thin Film Growth and Device Development in Monocrystalline Alpha and Beta Silicon Carbide

Abstract: High purity monocrystalline β-SiC films have been chemically vapor deposited on Si (100) and α-SiC (0001) by numerous groups around the world using SiH4 and C3H8 or C2H4 carried in H2. Films grown on nominal Si (100) contain substantial concentrations of dislocations, stacking faults and inversion domain boundaries; those deposited on α-SiC (0001) contain primarily double positioning boundaries. Both types of boundaries may be eliminated by using off-axis orientations of the respective substrates. However, the films grown on off-axis a substrates were the a(6H) polytype. Schottky diode, p-n junction, MESFET, MOSFET and HBT devices have been fabricated with encouraging results for future commercial applications. The barrier heights and ideality factors of Au Schottky diodes on β-SiC ranged from 0.9—1.15 eV and 1.2—1.6, respectively. However, the reverse leakage currents were much lower and the breakdown voltages considerably higher at all temperatures for the diodes on the α-SiC films. MESFETs fabricated using the diodes in the alpha films were superior to those in beta with the transconductance being more than 15 times greater in the former. Enhancement-and depletion-mode MOSFETs exhibited better behavior in terms of saturation, drain voltage and high temperature operation. All films produced on a-SiC substrates were superior to those produced in beta films grown on Si.