About: LED lamp is a(n) research topic. Over the lifetime, 46445 publication(s) have been published within this topic receiving 194447 citation(s). The topic is also known as: LED light bulb & LED bulb.
TL;DR: Based on numerical analyses, it is shown that the proposed indoor visible-light communication system utilizing white LED lights is expected to be the indoor communication of the next generation.
Abstract: White LED offers advantageous properties such as high brightness, reliability, lower power consumption and long lifetime. White LEDs are expected to serve in the next generation of lamps. An indoor visible-light communication system utilizing white LED lights has been proposed from our laboratory. In the proposed system, these devices are used not only for illuminating rooms but also for an optical wireless communication system. Generally, plural lights are installed in our room. So, their optical path difference must be considered. In this paper, we discuss about the influence of interference and reflection. Based on numerical analyses, we show that the system is expected to be the indoor communication of the next generation.
Abstract: Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2 white at 1 A forward current in 1times1 mm2 chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs
Abstract: More than one-fifth of US electricity is used to power artificial lighting. Light-emitting diodes based on group III/nitride semiconductors are bringing about a revolution in energy-efficient lighting.
TL;DR: An AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED, represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.
Abstract: The development of a compact, solid-state light-emitting diode (LED) that emits at 210 nanometres — the shortest wavelength yet achieved for any type of LED — represents an important step towards achieving exciton-related light-emitting devices and replacing inefficient gas light sources with solid-state light sources. Compact high-efficiency ultraviolet solid-state light sources1—such as light-emitting diodes (LEDs) and laser diodes—are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond2 and III–V nitride semiconductors (GaN, AlGaN and AlN; refs 3–10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap11 of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.
•26 Aug 1998
Abstract: The systems and methods described herein relate to LED systems capable of generating light, such as for illumination or display purposes. The light-emitting LEDs may be controlled by a processor to alter the brightness and/or color of the generated light, e.g., by using pulse-width modulated signals. Thus, the resulting illumination may be controlled by a computer program to provide complex, predesigned patterns of light in virtually any environment.