Showing papers on "Lithography published in 1973"

Ion beam micromachining of integrated optics components.

Abstract: Thin film integrated optics components such as light guides, modulators, directional couplers, and polarizers demand high quality edge smoothness and high resolution pattern formation in dimensions down to submicrometer size. Fabrication techniques combining holographic and scanning electron beam lithography with ion beam micromachining have produced planar phase gratings with intervals as small as 2800 A, guiding channel couplers in GaAs, and also wire- grid polarizers for 10.6-µm radiation.

Laser production of lithographic printing plates

Abstract: The use of a laser beam to etch the surface of a printing plate made from a polymer composition on a metal or plastic base and a thin top coating of a hard hydrophilic material produces a lithographic printing plate capable of accepting ink in the etched region and accepting water in the unetched regions.

Fountain solution image apparatus for electronic lithography

Abstract: A method and apparatus for printing an image in scanned electronic form on an ink receiving surface using ordinary printer''s ink. The method and apparatus employ quasi-lithographic techniques and equipment, but unlike conventional lithography, the method does not require the preparation, prior to the printing process, of a lithographic plate containing in permanent form the image to be printed. The scanned electronic image is used to form a fountain solution image on a lithographically blank plate by the selective deposition and/or removal of the fountain solution from the plate. Lithographic ink is applied to the fountain solution imaged plate and then transferred to an ink receiving surface, such as paper or an offset blanket. Thereafter, the lithographically blank plate is cleaned and ready for the formation of the same or a different fountain solution image.

X-Ray Lithography: A Complementary Technique to Electron Beam Lithography

Abstract: X-ray lithography provides a means of replicating, in a single large-area exposure, submicron linewidth patterns made by scanning electron beam lithography. The technique is complementary to existing electron beam technology, and provides a number of unique advantages: (i) it is simple and inexpensive; (ii) the penetrating character of x-rays makes it relatively insensitive to contamination; (iii) both positive and negative type resists can be used; and (iv) because of the absence of backscattering effects, both positive and negative type patterns can be made with equal facility. Exposure times of seven minutes have been achieved for 3 μ mask-sample gaps. This can be decreased to less than one minute by using a rotating anode, or by reducing the mask-sample gap. The most recent results in x-ray lithography are reported, including the fabrication of surface wave devices. The elements of a multiple-mask alignment system are described. This system should permit the rapid and automatic superposition on a substrate of patterns from several different masks, to a precision of 1/10 μ.

Fundamental aspects of electron beam lithography. II. Low‐voltage exposure of negative resists

Abstract: A study has been made of the use of low‐voltage exposure of negative resists for electron lithography. Three resists have been investigatd; an esterified terpolymer, epoxidized polybutadiene, and polyglycidyl methacrylate. The optimum exposure conditions have been determined for each material, and the use of a low accelerating voltage (5 kV) found to be advantageous. The application of this technique for the pattern delineation of silicon dioxide and tungsten is described.

Photosensitive polymer composition

Abstract: Light-sensitive film forming polymers are disclosed which comprise recurring units of benzoate- and furoate-esterified polyvinyl alcohol as well as their utilization as photographic resist materials and printing plates for lithography

IGFET Inverter Circuits made with Electron Lithography

Abstract: In IGFET circuitry, it has been predicted that halving the lateral dimensions should bring about approximately a fourfold speed advantage; providing doping levels, vertical dimensions, and applied voltages are constant. We have used electron lithography to make p-channel IGFET inverter circuits with 9- and 4-μ gates and have demonstrated a sixfold improvement in the propagation delay for smaller circuits. The devices were made using a refractory metal and ion implantation as described by Moline et al., and by Boll and Lynch. (IEDM, Washington, 1972). The electron resist (used for all four lithographic stages) was much more sensitive than polymethylmethacrylate.

A high-speed p-channel random access 1024-bit memory made with electron lithography

Abstract: A switched capacitor, p-channel, 1024-- bit random access memory has been made with electron lithography. The circuit was the same as that described by Boll and Lynch (IEDM, 1972) but with halved lateral dimensions. For a given cell the gate length of the switching transistor was 4µm, and the chip size was 1.2×1.8mm. In order to fabricate the device, a 1µm alignment accuracy was required. Even with the modest shrinking of feature size, the minimum access time of the memory was reduced to less than 50 ns.

Fabrication of Integrated CMOS Transistors using Electron Lithography and Ion Implantation

Abstract: Electron lithography and ion implantation have been used in the fabrication of integrated complementary P-channel and N-channel transistors. A digitally controlled single electron beam system, the Electron Micropattern Generator, aligned and exposed the eight mask levels required. The cumulative alignment tolerance was 3 μ. Fabricated devices had channel lengths of 1, 2, and 6 μ, and drain-source breakdown voltages of − 22 and + 12 V for the P- and N-type, respectively. Ion implantation was used to produce self-aligned gate structures by extending the diffused source and drain contact regions to the gate edges. The implantation masks consisted of 3000 A aluminum and 7700 A PMM resist. Boron and phosphorus ions were implanted at 50 and 100 keV, respectively at dosages ranging from 1×1014 to 1×1015 ions/cm2. Sintering and annealing operations were performed at 500 °C for 10 min in N2 atmosphere. Sheet resistances ranged from 2700 to 1000 Ω/□ for implanted boron and 700−240 Ω/□ for the phosphorus. Evolving h...

Microfabrication using a Computer-Controlled Scanning Transmission

Abstract: Fabrication and inspection of two-dimensional lattice structures in thin polymer films have been carried out using a computer-controlled scanning electron microscope (CCSEM). Periods of 0.2 μ are quite regular, finer resolutions show some irregularities possibly due to film instabilities. Using the CCSEM permits great flexibility, and using thin films eliminates the problem of backscattered electrons from the substrate, which severely limits the resolution of periodic structures fabricated on a solid substrate. These structures should be useful in integrated optics, and may be used as x-ray lithography or evaporation masks.

A Simple Flying Spot Scanner Design for Electron Lithography

Abstract: A simple, inexpensive flying spot scanner system is described which enables a conventional scanning electron microscope (SEM) to be used for research projects in electron beam lithography. The unit, built almost entirely from readily purchased parts, bolts onto the SEM without any modification of the microscope itself. The ultimate resolution of the system exceeds 45 line pairs/cm over a 9 cm square frame, giving over 900 beam on, beam off operations per frame. The system has been used with electron lithography to etch thin films into patterns of considerable complexity with linewidths of less than 5000 A.

The Tamarind Book of Lithography: Art and Technique by Garo Antreasian and Clinton Adams (review)

Abstract: says, ‘is a relationship of direction and proportion’ and he goes on to discuss methods for training in observing and rendering these. One of these methods, triangulation, is explained in relation to copying a triangle, however, its application to figure drawing is not made very clear and the drawing reproduced as an example is not too helpful. He indicates the importance of negative shapes that are often overlooked. The treatment of light and shadow is especially good, fully and clearly elaborated with numerous illustrations. A chapter on clothing and other accessories and a number of reproductions of master drawings add to the value of this volume in the Studio Handbook series. Taubes’ book is also on introductory anatomy, which the author claims to have ‘undertaken a precise, graphic presentation of the human body, free from any confusing irrelevancies’. Far from being precise, however, the drawings and diagrams are crude and often incorrect and the text is superficial. He is inconsistent in his use of nomenclature, labelling a muscle ‘hood muscle’, for example, on some drawings and ‘trapezius’ on others, resulting in confusion rather than simplification. Some examples of anatomical errors are the following: Page 14-the author states that the ‘head’ of the thighbone creates a form on the body’s surface when it is really the ‘great trochanter’; the head is buried in the pelvic socket. In Figure 32 he repeats the error, labelling the great trochanter as the head of the thighbone, whereas in Figure 23 it is correctly indicated. Figure 40-what he labels as the ‘group of extensors’ on the forearm should be ‘flexors’. Figure 43-the labeling of biceps and outer vastus on the thigh are reversed and the semitendinosus is incorrectly indicated. Figure 47-what is labeled ‘flank pad’, otherwise known as ‘external oblique’, is actually the ‘gluteus medius’. Errors such as these, along with the poor quality of drawings and text, make the book just about useless except for the few master drawings that are reproduced. A great contrast is offered by Hogarth’s two books. Here drawings and diagrams are clear, generally accurate and with a strong feeling for three-dimensional form. The author gives simplified schemata and patterns for the muscle masses, showing the body in rhythmic movement and foreshortened perspective views. Each section ends with an indication of important points to remember in drawing. Both volumes are profusely illustrated with simple and concise texts. It is too bad that there is not more attention given to the skeleton structure in ‘Dynamic Anatomy’-the author takes this knowledge for granted in the reader-as it would have helped to make it much more complete and useful. The book on the head does treat the skull in some detail and also analyzes movement, wrinkle patterns, facial change due to ageing and different head types. A gallery of great heads from ancient Greece to the 20th century completes this volume. Both of these excellent works can be highly recommended to both students and experienced artists. Finally, almost a classic, first published in 1928 and often reprinted, Victor Perard‘s Anatomy and Drawing is a comprehensive atlas of the human body, the most thorough and accurate of those reviewed here. It has very little text but many drawings of bones and muscles, going into deeper layers than the other works. Though some of the deeper muscles may not be visible on the surface, they often affect the form and help one to understand the structure and function of the body. The figures are drawn in many positions, including foreshortened ones and there is a complete table of muscles, their origin and insertion. Though the drawings do not have Hogarth’s sense of volume, they are very complete and make an excellent, almost encyclopedic reference and a complement to the other books discussed.

The Fabrication of Bipolar Transistors using Electron Lithography, Ion Implantation, and Nickel-Masked Gold Metallization

Abstract: Bipolar microwave transistors have been fabricated using ion implantation and electron lithography, with a sputter-etched nickel-masked gold metallization process as originally developed by Herb and Labuda. The resulting devices showed the fine definition associated with the latter two technologies, together with the uniformity of electrical properties associated with ion implantation. The electrical properties of the transistors were found to be comparable to similar devices also made with ion implantation but employing conventional photolithography and electroplated gold metallization. It is suggested that the combination of technologies illustrated in the work will be generally applicable to bipolar integrated circuits.

Fabrication Procedure for Silicon Membrane X-Ray Lithography Masks.

Abstract: : CH LEXINGTON LINCOLN LABFabrication Procedure for Silicon Membrane X-Ray Lithography Masks.Technical note,Cohen,Ronald A. ;Mountain,Robert W. ;Smith,Henry I. ;Lemma,Muriel A. ;Spears,David L. ;TN-1973-38F19628-73-C-0002DA-7-X-263304-D-215ESDTR-73-248(*X ray diffraction, *Masking), (*Wafers, X ray diffraction), Silicon, Membranes, Etching, Boron, FabricationA step-by-step procedure for the fabrication of silicon membrane x-ray lithography masks is described. The procedure involves the diffusion of boron into the polished face of an n-type silicon wafer, the formation of gold absorber patterns on the boron diffused face, and the selective etching of the n-type silicon so as to produce thin membranes (2 to 5 microns thick) of silicon supporting the absorber patterns. (Author)

Lithographic printing - using a modified electrographic technique for producing the printing plate

Abstract: Lithographic printing by providing a recording material with a photoconducting layer, consisting of an inorganic photoconducting pigment and an organic binder, and contg. a surface modifying agent for the prodn. of a contact angle of water thereon of >135 degrees, and thereafter charging and exposing the photoconducting layer to produce an electrostatic latent image thereon and finally using the image-bearing recording material forming the lithographic plate for printing after inking it with an aqs. printing ink.

Method of making lithographic and offset printing plates

Abstract: A lithographic and offset printing plate comprising an aluminum support having thereon image areas comprising copper electroplated on a metallic silver image formed in openings of or on an anodic oxidation film corresponding to said image areas of said support is disclosed.