Showing papers on "Lithography published in 1974"
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01 Oct 1974TL;DR: In this article, the techniques of photolithography, electron lithography, X-ray lithography and ion bombardment etching are reviewed, and their advantages and disadvantages assessed from the point of view of fabricating surface-acoustic-wave and thin-film optical devices.
Abstract: The techniques of photolithography, electron lithography, X-ray lithography, ion bombardment etching, and liftoff are reviewed, and their advantages and disadvantages assessed from the point of view of fabricating surface-acoustic-wave and thin-film optical devices.
159 citations
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17 Jan 1974
TL;DR: In this article, material is transferred by a laser beam from a transparent carrier film to a lithographic surface, thereby producing a planographic printing plate and a film having clear areas corresponding to the image on the plate.
Abstract: Material is transferred by a laser beam from a transparent carrier film to a lithographic surface, thereby producing a planographic printing plate and a film having clear areas corresponding to the image on the plate.
101 citations
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15 Feb 1974TL;DR: A mask substrate for use in an x-ray lithographic system comprises a boron nitride member (32, Fig. 2) coated with a polyimide layer (20) whose thickness is approximately the same as that of the BN member as mentioned in this paper.
Abstract: A mask substrate for use in an x-ray lithographic system comprises a boron nitride member (32, Fig. 2) coated with a polyimide layer (20) whose thickness is approximately the same as that of the boron nitride member. The substrate is mechanically strong and both optically and x-ray transparent. Mask patterns formed on the substrate are characterized by low distortion and a low defect density.
44 citations
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TL;DR: A class of negative electron-beam resist copolymers of glycidyl methacrylate and ethyl acrylate is described in this paper, which have excellent lithographic characteristics.
Abstract: A class of negative electron-beam resists is described which have excellent lithographic characteristics. The resists are copolymers of glycidyl methacrylate and ethyl acrylate. Their molecular weights, epoxy contents, and polydispersivities can be controlled to give an adjustable range of electron sensitivity and contrast. The copolymers are compared to other epoxy containing, negative electron-beam resists.
Micrography of resist profiles generated from a single line scan of the electron beam have been used to illustrate the complex interaction of accelerating voltage of the electron beam and resist contrast on resolution. Optical gratings made from single line scans of the beam have feature sizes less than 300 nm in the resist, etched metals, and dielectrics.
37 citations
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TL;DR: In this paper, high-speed low-power x-ray lithography has been accomplished using 834 −A radiation excited by a 75 −W electron beam incident x−ray flux at the polymer film was 50 μW/cm2 Exposure was through a 34 −μm-thick silicon mask substrate with patterns in a 4000 −A−thick gold film Resist thickness was 4000 −5000 A Both positive and negative resists have been used Exposure times were 4 min for both poly(diallyl orthophthalate) and poly(butene‐1 sulfone
Abstract: High‐speed low‐power x‐ray lithography has been accomplished using 834‐A radiation excited by a 75‐W electron beam Incident x‐ray flux at the polymer film was 50 μW/cm2 Exposure was through a 34‐μm‐thick silicon mask substrate with patterns in a 4000‐A‐thick gold film Resist thickness was 4000–5000 A Both positive and negative resists have been used Exposure times were 4 min for both poly(diallyl orthophthalate) and poly(butene‐1 sulfone), 100 sec for poly(glycidyl methacrylate‐co‐ethyl acrylate), and 15 sec for epoxidized polybutadiene
22 citations
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16 Jan 1974
TL;DR: In this paper, the applied finish or lithography of articles, such as flat metal plates or cylindrical containers is removed by passing the article through a zone of intense heat and then immediately into a second zone where the surface of the article is brushed while hot and while the lithography is soft.
Abstract: The applied finish or lithography of articles, such as flat metal plates or cylindrical containers is removed by passing the article through a zone of intense heat and then immediately into a second zone where the surface of the article is brushed while hot and while the lithography is soft. A plurality of articles are urged seriatim along a linear path through an induction heating coil and are then engaged by one or more wire brushes which also rotate a container during the brushing operation. The process may be carried out rapidly and automatically without damage to the soldered seam or metallurgy of a container.
6 citations
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4 citations
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01 Dec 1974TL;DR: In this paper, a new approach to X-ray lithography based on the use of X-rays with wavelengths of 4-6 A rather than the 8-34 A wavelength used in previous work is described.
Abstract: We have developed, and describe herein, a new approach to X-ray lithography based on the use of X-rays with wavelengths of 4–6 A rather than the 8–34 A wavelength used in previous work. The principal advantage of the shorter wavelengths is that they allow the exposure system to have X-ray windows for increased throughput. We have achieved the replication of submicron size features in metal films using a 4.6 A Rh L α source, a new X-ray mask and new X-ray resist with high sensitivity to the shorter wavelengths and improved ion milling techniques.
1 citations
01 Jan 1974
1 citations