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Lithography

About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.


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Journal ArticleDOI
TL;DR: In this paper, the spectral distribution of the BESSY I wavelength shifter, Berlin (0.8 GeV, 5 T) equipped with several vacuum windows and a mask membrane made of beryllium with a thickness of 500 μm.
Abstract: Deep x-ray lithography (DXRL) with synchrotron radiation represents the technological core of the Lithographie, Galvanoformung, Abformung (LIGA) microfabrication process, thus defining the lateral shape and the accuracy of the final product. High aspect ratio microcomponents with a height of some micrometers up to several millimeters can be manufactured with submicron precision. We report on recently performed theoretical investigations on the structure transfer accuracy in the shadow printing process. Model calculations revealed the importance of photoelectron emission compared to Fresnel diffraction and beam divergence for typical DXRL conditions. The parameters used to model the effects correspond to the spectral distribution of the BESSY I wavelength shifter, Berlin (0.8 GeV, 5 T) equipped with several vacuum windows and a mask membrane made of beryllium with a thickness of 500 μm. A poly(methylmethacrylate) resist layer of 300 μm thickness with a bottom dose of 5 kJ cm−3 is assumed. The calculated do...

100 citations

Journal ArticleDOI
TL;DR: In this paper, a novel class of low molecular-weight organic resist materials for nanometer lithography, 1,3,5,tris[4,4′,4″]-tris(allylsuccinimido) triphenylamine (ASITPA), was designed and synthesized.
Abstract: A novel class of low molecular‐weight organic resist materials for nanometer lithography, 1,3,5‐tris[4‐(4‐toluenesulfonyloxy)phenyl]benzene (TsOTPB) and 4,4′,4″‐tris(allylsuccinimido) triphenylamine (ASITPA), was designed and synthesized. TsOTPB with a glass‐transition temperature (Tg) of 64 °C and ASITPA with a Tg of 80 °C were found to function as positive and negative resists, respectively, enabling the fabrication of 150 and 70 nm line patterns on exposure to an electron beam at 50 keV.

100 citations

Patent
15 Oct 1997
TL;DR: In this article, a method for determining if an undesirable feature on a photomask will adversely affect the performance of the semiconductor integrated circuit device that the mask is being used to create is presented.
Abstract: A method for determining if an undesirable feature on a photomask will adversely affect the performance of the semiconductor integrated circuit device that the mask is being used to create. The method includes inspecting the photomask for undesirable features and analyzing the designed features close to the defects. This analysis is performed on lithographic images that represent the image that is transferred onto the semiconductor wafer by the lithography process. This analysis takes into account the effect of variations that are present in the lithography process. Through knowledge of the effects of variations in mask critical dimension of a feature on the lithographic image of that feature, the analysis results in the assignment of an equivalent critical dimension error to the defect. This equivalent critical dimension error is then compared to the mask critical dimension error specification to determine whether or not the defect will adversely affect the device.

99 citations

Patent
16 Mar 1995
TL;DR: In this article, the authors described a method for the exposure of sparse hole and mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material.
Abstract: Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.

99 citations

Journal ArticleDOI
TL;DR: In this paper, the potential for imprinting nanostructures with flexible molds in UV-curable resists in the 100nm regime is explored and the limitations analyzed, and the resolution, dimension stability, and reproducibility of the Soft UV-Nanoimprint is investigated.
Abstract: The resolution, dimension stability, and reproducibility of the Soft UV-Nanoimprint is investigated. The potential for imprinting nanostructures with flexible molds in UV-curable resists in the 100nm regime are explored and the limitations analyzed. The dimensional stability of imprinted patterns is determined by the deformation of the mold that in term depends on the geometry of the structures and the imprint pressure applied.

99 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023546
20221,116
2021336
2020502
2019612
2018608