Lithography

About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.

Microlens array imaging system for photolithography

Abstract: Keywords: flat panel displays ; compound eye ; microlenses ; micro-optics ; multi-aperture imaging ; optical images ; photolithography ; photoresists Reference EPFL-ARTICLE-183166 Record created on 2013-01-17, modified on 2017-05-10

Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic

Abstract: The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient, and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time. As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS, a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (s) of 1 and support the full 200′600 design printed field of view. In addition to a new illuminator design, new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.

Nanogaps by direct lithography for high-resolution imaging and electronic characterization of nanostructures

Abstract: We report a method for fabricating nanogaps directly with electron beam lithography (EBL). The primary resolution-limit of EBL, electron back-scattering, is reduced dramatically by using a thin-film as a substrate. We show that this resolution enhancement allows one to fabricate metal electrodes with separation from arbitrarily large to under one nanometer. Furthermore, because these nanogaps are on a thin film, they can be imaged with high-resolution transmission electron microscopy (HRTEM). Using these nanogaps we measured the charge transport through several coupled PbSe nanocrystals and correlated the data with detailed structural information obtained by performing HRTEM on the same device.

Arrayed miniature electron beam columns for high throughput sub-100 nm lithography

Abstract: In recent years, considerable progress has been made on an approach based on a novel concept which combines scanning tunneling microscope, microfabricated lenses, and field emission technologies to achieve microminiaturized low‐voltage electron beam columns with performance surpassing the conventional column. High throughput lithography is a potentially very important application for these microfabricated columns which measure only millimeters in dimensions. This is to be achieved using an array of these minicolumns in parallel in a multibeam mode with one or more columns per chip. The low‐voltage operation is attractive because proximity effect corrections may not need to be applied. In addition, an arrayed microcolumn system also has the potential of reducing the cost of the overall system through the compaction of the mechanical system. The throughout advantages for such an arrayed system based on different beam forming optics and pattern generation approaches will be discussed. In addition to lithography, a wide range of other applications for such an arrayed system such as testing, metrology, storage, etc., can also be considered.

Deep-submicrometer MOS device fabrication using a photoresist-ashing technique

Abstract: A photoresist-ashing process has been developed which, when used in conjunction with conventional g-line optical lithography, permits the controlled definition of deep-submicrometer features. The ultrafine lines were obtained by calibrated ashing of the lithographically defined features in oxygen plasma. The technique has been successfully used to fabricate MOSFETs with effective channel length as small as 0.15 mu m that show excellent characteristics. An NMOS ring oscillator with 0.2- mu m devices has been fabricated with a room-temperature propagation delay of 22 ps/stage. Studies indicate that the thinning is both reproducible and uniform so that it should be usable in circuit as well as device fabrication. Since most polymer-based resist materials are etchable with an oxygen plasma, the basic technique could be extended to supplement other lithographic processes, including e-beam and X-ray processes, for fabricating both silicon and nonsilicon devices and circuits. >