Topic
Lithography
About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.
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TL;DR: In this article, a modified scanning electron microscope operated at 35 keV and liftoff of Ni/Au was used to achieve a standard deviation (3σ) of an overlay accuracy (30 deviation) of 50 nm.
Abstract: Gratings of 10 nm wide metal lines 30 nm apart, and quantum transistor gates with 10 nm wide gaps over 300 nm long between two metal rectangles have been repeatedly achieved on thick GaAs substrates using a modified scanning electron microscope operated at 35 keV and liftoff of Ni/Au. Furthermore, multilevel electron beam lithography with a standard deviation (3σ) of an overlay accuracy (30 deviation) of 50 nm has been achieved using the same modified scanning electron microscope.
94 citations
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TSMC1
TL;DR: In this paper, a photo resist is pre-exposed using a lithography mask and then exposed using a post-exposure mask, and the photo resist was then developed.
Abstract: A method includes coating a photo resist on a wafer in a first production tool, and performing a pre-exposure baking on the photo resist in a second production tool separate from the first production tool. After the pre-exposure baking, the photo resist is exposed using a lithography mask. After the step of exposing the photo resist, a post-exposure baking is performed on the photo resist. The photo resist is then developed.
94 citations
TL;DR: In this article, a simple approach to simulating the electron-beam lithography for sub-0.2 μm T-gate fabrication is presented, where both the proximity parameters and the solubility rates of resists are experimentally determined.
94 citations
TL;DR: In this paper, a polymeric matrix is used to encapsulate the nanomaterials and deliver them to surfaces with precise control of feature size, which is a major challenge to the field of nanolithography because of differences in size, shape and solubility of these materials.
Abstract: The controlled patterning of nanomaterials presents a major challenge to the field of nanolithography because of differences in size, shape and solubility of these materials. Matrix-assisted dip-pen nanolithography and polymer pen lithography provide a solution to this problem by utilizing a polymeric matrix that encapsulates the nanomaterials and delivers them to surfaces with precise control of feature size.
93 citations
01 Jan 2012
TL;DR: In this article, the key principles of electron beam lithography (EBL) are summarized and some of the complex interactions between relevant parameters and their effects on the quality of the resulting lithographic structures are discussed.
Abstract: Electron Beam Lithography (EBL) is a fundamental technique of nanofabrication, allowing not only the direct writing of structures down to sub-10 nm dimensions, but also enabling high volume nanoscale patterning technologies such as (DUV and EUV) optical lithography and nanoimprint lithography through the formation of masks and templates. This chapter summarizes the key principles of EBL and explores some of the complex interactions between relevant parameters and their effects on the quality of the resulting lithographic structures. The use of low energy exposure and cold development is discussed, along with their impacts on processing windows. Applications of EBL are explored for the fabrication of very small isolated bridge structures and for high density master masks for nanoimprint lithography. Strategies for using both positive and negative tone resists are explored.
93 citations