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Lithography

About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, a soft lithography technique was employed to fabricate a polydimethylsiloxane (PDMS) replica of the multi-layered scales on the upper surface of a Morpho butterfly.

75 citations

Journal ArticleDOI
TL;DR: In this article, the surface roughness of the AlN/diamond structure was measured by atomic force microscopy and showed a very low surface roughing, less than 1 nm.
Abstract: We report in this paper on the study and the realization of surface acoustic wave devices based on an AlN/diamond layered structure intended for the X band (8 GHz). Both x-ray diffraction and transmission electronic microscopy, used for characterization of the structural properties of the AlN/diamond structure, have shown (002) highly oriented sputtered AlN films on free-standing chemical vapor deposition diamond films. Surface roughness of the AlN/diamond structure was measured by atomic force microscopy and showed a very low surface roughness, less than 1 nm. Low surface roughness is very important to reduce the acoustic propagation losses. SAW devices operating in the range of 8 GHz were realized by the combination of the high velocity of the AlN/diamond layered structure and the high lateral resolution obtained using e-beam lithography (EBL). Due to high electrical resistivity of the AlN film, interdigital transducers with submicronic resolution were patterned by an adapted technological EBL process. ...

75 citations

Patent
14 Jul 2003
TL;DR: In this article, a line and space pattern is used to construct a structure from a masking layer and a sidewall spacer is formed on a line from the masking layers used in the formation of the structure.
Abstract: The invention is an apparatus and a method of manufacturing a structure. The method includes the step of patterning a layer to include a line and space pattern. A space of the line and space pattern in a first region includes a first critical dimension less than achievable at a resolution limit of lithography. A line of the line and space pattern in a second region includes a second critical dimension achievable at a resolution limit of lithography. A sidewall spacer is formed on a line from a masking layer used in the formation of the structure. The method uses one critical masking step and two non-critical masking steps.

75 citations

Proceedings ArticleDOI
28 May 2004
TL;DR: In this paper, the authors proposed a new optimization procedure for mask and source geometries in optical projection lithography, which evaluates the imaging performance of specific patterns over a certain focus range.
Abstract: The application of resolution enhancement techniques pushes optical projection lithography close to its theoretical limit with a k1-factor of 0.25. For the imaging close to this limit the interaction between the mask and the shape of the illumination aperture gains increasing importance. By jointly optimizing the mask and the source low k1 images can be printed with process latitudes not achievable otherwise. This paper proposes a new optimization procedure for mask and source geometries in optical projection lithography. A general merit function is introduced, that evaluates the imaging performance of specific patterns over a certain focus range. It also takes certain technological aspects, that are defined by the manufacturability and inspectability criteria for the mask, into account. Automatic optimization of the mask and illumination parameters with a genetic algorithm identifies optimum imaging conditions without any additional a-priori knowledge about lithographic processes. Several examples demonstrate the potential of the proposed concept.

75 citations

01 Jan 2015
TL;DR: In this article, the authors demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions.
Abstract: Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning integrated circuits and reaching sub-10-nm resolution within the next decade. Should photon-based lithography still be used for patterning smaller feature sizes, beyond EUV (BEUV) lithography at 6.x nm wavelength is an option that could potentially meet the rigid demands of the semiconductor industry. We demonstrate simultaneous characterization of the resolution, line-edge roughness, and sensitivity of distinct photoresists at BEUV and compare their properties when exposed to EUV under the same conditions. By using interference lithography at these wavelengths, we show the possibility for patterning beyond 22 nm resolution and characterize the impact of using higher energy photons on the line-edge roughness and exposure latitude. We observe high sensitivity of the photoresist performance on its chemical content and compare their overall performance using the Z-parameter criterion. Interestingly, inorganic photoresists have much better performance at BEUV, while organic chemically-amplified photoresists would need serious adaptations for being used at such wavelength. Our results have immediate implications for deeper understanding of the radiation chemistry of novel photoresists at the EUV and soft X-ray spectra.

75 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023546
20221,116
2021336
2020502
2019612
2018608