Topic
Lithography
About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.
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TL;DR: In this article, a planar multilayered dielectric and metal films were used to cover the total visible wavelength range with simulated and experimental absorption efficiencies higher than 90%.
Abstract: We have proposed and experimentally demonstrated a lithography-free, broadband, thin optical absorber composed of planar multilayered dielectric and metal films, which can cover the total visible wavelength range with simulated and experimental absorption efficiencies higher than 90% Moreover, the absorption is insensitive to the polarization and angle of incidence Such a planar device is much easier to fabricate compared with other broadband absorbers with complicated structures and may have potential applications in solar energy harvesting and controllable thermal emission
72 citations
TL;DR: In this article, the authors present data on the transmission of optical materials at 157 nm, the performance of optical coatings, the issues that must be faced by photomasks, and the considerations related to engineering resists at this wavelength.
Abstract: Projection lithography at 157 nm is a candidate technology for the 100–70 nm generations, and possibly beyond. It would provide an evolutionary extension to the current primary photolithographic processes and components: excimer lasers, refractive optics, and transmissive masks. This article presents data on the transmission of optical materials at 157 nm, the performance of optical coatings, the issues that must be faced by photomasks, and the considerations related to engineering resists at this wavelength.
72 citations
01 Jan 1993-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: The use of focused ion beams for fine pattern writing was examined in this paper, where it was shown that the ability to write original patterns at 0.1 µm and below is a serious candidate for future fine pattern rewriting.
Abstract: Lithography for microelectronics, that is, the exposure and development of resist, is already being carried out in research laboratories at dimensions well below 0.1 μm. In production the minimum dimensions are likely to approach 0.1 μm before the end of the decade. This review will examine the use of focused ion beams for ultrafine lithography. Minimum dimensions down to 0.015 μm have been reported as well as exposure of 0.25 μm thick resist with o.05 μm linewidth for the making of X-ray lithography masks. At this time there are only two techniques for writing original patterns (as opposed to replicating them) at 0.1 μm and below; electron beams and ion beams. Electron beams are at a mature state of development and have advantages in absence of shot noise and in fast deflection capability. Ion beams on the other hand have demonstrated absence of proximity effect and high resist sensitivity, i.e. potentially faster writing speed. The development of the gas field ion source promises hundredfold increase in current density of light ions (H2+, He …) in the beam focal spot. In addition, these light ion beams at high energy can be deflected at the speeds needed for lithography. Thus focused ion beam lithography is a serious candidate for future fine pattern writing.
72 citations
TL;DR: Lithography using neon ions with fluence <1 ion/nm(2), ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch is reported, expected to impact a wide array of fields that are dependent on beam-based lithography.
Abstract: Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm2, ∼1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.
72 citations
TL;DR: Self-aligned, bottom-up and self-assembly based Shrinking-Hole Colloidal Lithography provides unique control of the size and position of subsequently deposited particles forming the nanoantenna itself, and allows delivery of nanoobjects consisting of a material of choice to the antenna hot spot, all in a single lithography step and, if desired, uniformly covering several square centimeters of surface.
Abstract: Plasmonic nanoantennas create locally strongly enhanced electric fields in so-called hot spots. To place a relevant nanoobject with high accuracy in such a hot spot is crucial to fully capitalize on the potential of nanoantennas to control, detect, and enhance processes at the nanoscale. With state-of-the-art nanofabrication, in particular when several materials are to be used, small gaps between antenna elements are sought, and large surface areas are to be patterned, this is a grand challenge. Here we introduce self-aligned, bottom-up and self-assembly based Shrinking-Hole Colloidal Lithography, which provides (i) unique control of the size and position of subsequently deposited particles forming the nanoantenna itself, and (ii) allows delivery of nanoobjects consisting of a material of choice to the antenna hot spot, all in a single lithography step and, if desired, uniformly covering several square centimeters of surface. We illustrate the functionality of SHCL nanoantenna arrangements by (i) an optical hydrogen sensor exploiting the polarization dependent sensitivity of an Au-Pd nanoantenna ensemble; and (ii) single particle hydrogen sensing with an Au dimer nanoantenna with a small Pd nanoparticle in the hot spot.
72 citations