Lithography

About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.

Deep alignment marks on edge chips for subsequent alignment of opaque layers

Abstract: A method of forming alignment marks on edge chips in a kerf region of a semiconductor workpiece. The alignment marks are formed in at least one material layer of the semiconductor device. The alignment marks are formed using a separate lithography mask, and may extend into lower layers, including the workpiece, of the semiconductor device. An opaque material layer is deposited, and depressions are formed in the opaque layer over the deep alignment mark trenches. The depressions in the opaque material layer are used to align a lithography process to open the opaque material layer over alignment marks in an underlying metallization layer. The alignment marks in the metallization layer are then used to align the lithography process used to pattern the opaque material layer.

Lithographic printing plate original plate and lithographic printing method

Abstract: A lithographic printing plate original plate capable of producing a large number of good printed sheets with a practical amount of energy while exhibiting excellent developing performance and printing wear resistance in a printing press and reducing contamination by wetting water, and a lithographic printing method The lithographic printing plate original plate having an image recording layer on a support is characterized in that at least a part of unexposed portion of the image recording layer does not dissolve into the print ink and/or the wetting water but is removed as a film in a step of developing the original plate by supplying the print ink and/or the wetting water after it is set in a printing press and exposed imagewise or after it is exposed imagewise and set in a printing press A lithographic printing method employing that original plate is also provided

Circular Dichroism from Chiral Nanomaterial Fabricated by On‐Edge Lithography

Abstract: A novel-shaped plasmonic chiral nanomaterial exhibiting circular dichroism in the near-infrared spectral range is presented. Applying on-edge lithography, a large area with these nanostructures is efficiently covered. This fabrication method offers tunability of the operation bandwidth by tailoring the chiral shape.

Full-wafer fabrication by nanostencil lithography of micro/nanomechanical mass sensors monolithically integrated with CMOS.

Abstract: Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 μm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of 2000 nanodevices per wafer by post-processing standard CMOS substrates using one single metal evaporation, pattern transfer to silicon and subsequent etch of the sacrificial layer. Resonance frequencies in the MHz range were measured in air and vacuum. As proof-of-concept towards an application as high performance sensors, CMOS integrated nano/micromechanical resonators are successfully implemented as ultra-sensitive areal mass sensors. These devices demonstrate the ability to monitor the deposition of gold layers whose average thickness is smaller than a monolayer. Their areal mass sensitivity is in the range of 10−11 gcm−2 Hz−1, and their thickness resolution corresponds to approximately a thousandth of a monolayer.

Electron-beam cell projection lithography: A new high-throughput electron-beam direct-writing technology using a specially tailored Si aperture

Abstract: Electron‐beam cell projection lithography realizes a high throughput capability suitable for ultra‐large‐scale integration (ULSI) manufacturing. This method makes it possible to drastically reduce the number of electron‐beam exposure shots by utilizing a specially shaped beam. This shaped beam is created by an Si aperture which forms various shapes, coinciding with the array of each unit cell of an ULSI pattern. The aperture also forms a rectangular shape for conventional variable‐shaped method in order to create random patterns. An aperture made of a single crystal of Si is fabricated using ULSI process techniques. As the reduction ratio of electron optics is larger than that of an optical stepper, pattern size errors caused by aperture inaccuracies can be reduced significantly.