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Lithography

About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.


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Journal ArticleDOI
TL;DR: In this article, the basic principles of interference lithography (IL) are described and a review of the most powerful and relatively inexpensive methodologies for creating large-area patterns with micron-to sub-micron periodicities is presented.
Abstract: In this review the basic principles of interference lithography (IL) are described. IL is emerging as one of the most powerful yet relatively inexpensive methodologies for creating large-area patterns with micron- to sub-micron periodicities. N-dimensional periodic structures (N ≤ 3) can be obtained by interfering (N + 1) non-coplanar beams in a photoresist. The symmetry and shape of the "unit cell" can be conveniently controlled by varying the intensities, geometries, polarizations, and phases of the beams involved. IL done with shorter wave-length lasers and/or liquid immersion lithography can create features with sub-50nm dimensions. Such periodic structures are beginning to find wide use in photonic crystal science, optical telecommunications, data storage, and the integrated circuit industry. Newer innovations such as diffraction element assisted lithography or DEAL and phase-controlled IL for making two-dimensional structures are also discussed. SEM images of two-dimensional patterns created by three-beam non-coplanar interference lithography. The upper left hand image corresponds to the case when the phases of the three beams used to make the exposure are equal. The remaining images correspond to situations where one laser beam has been given a different phase relative to the other two beams when making the exposure.

237 citations

Journal ArticleDOI
22 Aug 2011-ACS Nano
TL;DR: With this method, densely packed gold nanostructures of varying geometries separated by ultrasmall gaps are fabricated by controlling structure sizes during lithography with nanometer precision, so the plasmon resonances of the resulting patterns could be accurately tuned.
Abstract: Nanoscale gaps in metal films enable strong field enhancements in plasmonic structures. However, the reliable fabrication of ultrasmall gaps (<10 nm) for real applications is still challenging. In this work, we report a method to directly and reliably fabricate sub-10-nm gaps in plasmonic structures without restrictions on pattern design. This method is based on a lift-off process using high-resolution electron-beam lithography with a negative-tone hydrogen silsesquioxane (HSQ) resist, where the resulting nanogap size is determined by the width of the patterned HSQ structure, which could be written at less than 10 nm. With this method, we fabricated densely packed gold nanostructures of varying geometries separated by ultrasmall gaps. By controlling structure sizes during lithography with nanometer precision, the plasmon resonances of the resulting patterns could be accurately tuned. Optical and surface-enhanced Raman scattering (SERS) measurements on the patterned structures show that this technique has ...

236 citations

Journal ArticleDOI
16 Aug 2005-Langmuir
TL;DR: A scaling law among the stamp modulus, punch height and spacing, and work of adhesion between the stamp and substrate is established, which leads to a simple criterion against the unwanted roof collapse.
Abstract: We have studied the so-called roof collapse in soft lithography. Roof collapse is due to the adhesion between the PDMS stamp and substrate, and it may affect the quality of soft lithography. Our analysis accounts for the interactions of multiple punches and the effect of elastic mismatch between the PDMS stamp and substrate. A scaling law among the stamp modulus, punch height and spacing, and work of adhesion between the stamp and substrate is established. Such a scaling law leads to a simple criterion against the unwanted roof collapse. The present study agrees well with the experimental data.

236 citations

Journal ArticleDOI
TL;DR: This work presents the use of silk as a natural and biofunctional resist for electron-beam lithography, and fabricates nanoscale photonic lattices using both neat silk and silk doped with quantum dots, green fluorescent proteins (GFPs) or horseradish peroxidase (HRP) as a proof of principle of the viability.
Abstract: Traditional nanofabrication techniques often require complex lithographic steps and the use of toxic chemicals. To move from the laboratory scale to large scales, nanofabrication should be carried out using alternative procedures that are simple, inexpensive and use non-toxic solvents. Recent efforts have focused on nanoimprinting and the use of organic resists (such as quantum dot-polymer hybrids, DNA and poly(ethylene glycol)), which still require, for the most part, noxious chemicals for processing. Significant advances have been achieved using 'green' resists that can be developed with water, but so far these approaches have suffered from low electron sensitivity, line edge roughness and scalability constraints. Here, we present the use of silk as a natural and biofunctional resist for electron-beam lithography. The process is entirely water-based, starting with the silk aqueous solution and ending with simple development of the exposed silk film in water. Because of its polymorphic crystalline structure, silk can be used either as a positive or negative resist through interactions with an electron beam. Moreover, silk can be easily modified, thereby enabling a variety of 'functional resists', including biologically active versions. As a proof of principle of the viability of all-water-based silk electron-beam lithography (EBL), we fabricate nanoscale photonic lattices using both neat silk and silk doped with quantum dots, green fluorescent proteins (GFPs) or horseradish peroxidase (HRP).

236 citations

Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits, and demonstrate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5mum radius.
Abstract: High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5-mum radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits.

235 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023546
20221,116
2021336
2020502
2019612
2018608