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Lithography

About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.


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Journal ArticleDOI
TL;DR: In this article, the authors present a collection of fast level set methods, each aimed at a particular application, including photoresist development, etching/deposition problems under the effects of masking, visibility, complex flux integrations over sources, nonconvex sputter deposition problems, and simultaneous deposition and etch phenomena.
Abstract: The range of surface evolution problems in etching, deposition, and lithography development offers significant challenge for numerical methods in front tracking. Level set methods for evolving interfaces are specifically designed for profiles which can develop sharp corners, change topology, and undergo orders of magnitude changes in speed. They are based on solving a Hamilton-Jacobi type equation for a level set function, using techniques borrowed from hyperbolic conservation laws. Over the past few years, a body of level set methods have been developed with application to microfabrication problems. In this paper, we give an overview of these techniques, describe the implementation in etching, deposition, and lithography simulations, and present a collection of fast level set methods, each aimed at a particular application. In the case of photoresist development and isotropic etching/deposition, the fast marching level set method, introduced by Sethian (1996), can track the three-dimensional photoresist process through a 200/spl times/200/spl times/200 rate function grid in under 55 s on a Sparc10. In the case of more complex etching and deposition, the narrow band level set method, introduced in Adalsteinsson and Sethian (1995), can be used to handle problems in which the speed of the interface delicately depends on the orientation of the interface versus an incoming beam, the effects of visibility, surface tension, reflection and re-emission, and complex three-dimensional effects. Our applications include photoresist development, etching/deposition problems under the effects of masking, visibility, complex flux integrations over sources, nonconvex sputter deposition problems, and simultaneous deposition and etch phenomena.

170 citations

Journal ArticleDOI
Shinji Matsui1, Yukinori Ochiai1
TL;DR: In this article, the current state of focused ion beam (FIB) applications in relation to solid state devices is reviewed, and recent use of FIB technology for lithography, etching, deposition, and doping are described.
Abstract: The current state of focused ion beam (FIB) applications in relation to solid state devices is reviewed, and recent use of FIB technology for lithography, etching, deposition, and doping are described. Etching and deposition have become essential processes for failure analysis and for mask repair in silicon ULSL production. Furthermore, the FIB doping technique has been used to fabricate quantum effect devices.

169 citations

Journal ArticleDOI
19 Jun 2009-Small
TL;DR: The fabrication of three-dimensional architectures withnanoscale dimensions with various methodologies including photolitho-graphy, scanning beam lithography, molding, embossing, and imprinting is studied.
Abstract: The fabrication of three-dimensional (3D) architectures withnanoscale dimensions is still an evolving research area ofnanotechnology. Various methodologies including conven-tional and unconventional fabrications, such as photolitho-graphy, scanning beam lithography, molding, embossing, andimprinting, have been developed in the past decade.

169 citations

Journal ArticleDOI
TL;DR: In this paper, the authors proposed an approach to reduce the feature size to the nanometer scale by using laser cooling to localize atoms, which brought laser-processing technology to a new era of atomic engineering.
Abstract: Laser precision engineering is being extensively applied in industries for device microfabrication due to its unique advantages of being a dry and noncontact process, coupled with the availability of reliable light sources and affordable system cost. To further reduce the feature size to the nanometer scale, the optical diffraction limit has to be overcome. With the combination of advanced processing tools such as SPM, NSOM, transparent and metallic particles, feature sizes as small as 20 nm have been achieved by near-field laser irradiation, which has extended the application scope of laser precision engineering significantly. Meanwhile, parallel laser processing has been actively pursued to realize large-area and high-throughput nanofabrication by the use of microlens arrays (MLA). Laser thermal lithography using a DVD optical storage process has also been developed to achieve low-cost and high-speed nanofabrication. Laser interference lithography, another large area nanofabrication technique, is also capable of fabricating sub-100 nm periodic structures. To further reduce the feature size to the atomic scale, atomic lithography using laser cooling to localize atoms is being developed, bringing laser-processing technology to a new era of atomic engineering.

169 citations

Journal ArticleDOI
TL;DR: In this article, the authors present an approach to size reduction using topographically directed etching with neutral metastable atoms (NMT) and near field phase-shifting photolithography.
Abstract: 4.1. Nanomachining with Scanning Probes 1831 4.2. Soft Lithography 1832 4.3. Embossing with Rigid Masters 1835 4.4. Near-Field Phase-Shifting Photolithography 1835 4.5. Topographically Directed Photolithography 1837 4.6. Topographically Directed Etching 1837 4.7. Lithography with Neutral Metastable Atoms 1838 4.8. Approaches to Size Reduction 1839 5. Techniques for Making Regular or Simple Patterns 1839

169 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023546
20221,116
2021336
2020502
2019612
2018608