Lithography

About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.

Lithography-Based Additive Manufacturing of Cellular Ceramic Structures†

Abstract: Lithography-based additive manufacturing technology is a layered manufacturing approach where liquid photopolymerizable resins are solidified with ultraviolet, visible, or infrared light. Using a system based on digital mirror devices, photopolymers can be exposed selectively in order to build parts with defined geometries. By modifying the system with a rotating building platform, suspensions with a high solid loading of ceramic powders can be processed, despite the high viscosity of these resins. Depending on the field of application, various formulations were developed for fabricating customized ceramic parts made of alumina, tricalcium phosphate, or bioactive glasses, respectively. On the one hand the influence of the ceramic filler on the mechanical properties is characterized, on the other hand the good precision and the high surface quality of the process system is discussed. For alumina filled resins a solid loading of 50 vol% was used to obtain fully dense parts (>99% of theoretical density) with high fracture strength (biaxial strength of 516 MPa).

GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography

Abstract: There is a significant gap between the internal and external efficiencies of conventional GaN light-emitting diodes (LEDs). The reason for this shortfall is the narrow escape cone for light in high refractive index semiconductors. In this letter, the p-side-up GaN∕sapphire LEDs with surface textured indium tin oxide (ITO) widow layers were investigated using natural lithography with polystyrene spheres as the etching mask. Under optimum etching conditions, the surface roughness of the ITO film can reach 140 nm while the polystyrene sphere on the textured ITO surface is maintained at about 250–300 nm in diameter. The output power of the ITO∕GaN LED with and without surface texturing is 10.9, and 8.5 mW at 20 mA, respectively. The LEDs fabricated using the surface-textured ITO produced an output power that exceeded that of the planar-surface LED by about 28% at 20 mA.

Double patterning with multilayer hard mask shrinkage for sub-0.25 k1 lithography

Abstract: In order to reduce the overall size of device features, continuing development in the low k1 lithography process is essential for achieving the feature reduction. Although ArF immersion lithography has extended the feature size scaling to 45nm node, investigation of low k1 lithography process is still important for either ArF dry or wet lithography. Double patterning is one procedure pushing down the k1 limit below 0.25. It combines the multilayer hard mask application and resist shrinkage process to get the feature size reduced to quarter pitch of the illumination limit. In recent spin-on hard mask studies, silicon containing bottom antireflective coatings (BARC) have been developed to combine the function of reflective control and great etching selectivity to the photoresist. Trilayer resist including the photoresist, silicon containing BARC and planarizing organic underlay can improve the reflectivity by optical index tuning of dual hard mask layer effectively and reduce photoresist thickness to avoid the pattern collapse with small features. In our study, we found some interesting characteristics of trilayer resist could be used for double patterning technology and made the low k1 process more feasible. This procedure we investigated can make the feature size of half pitch reduce to 37nm and beyond at 0.92NA under ArF dry lithography. Among the resolution enhancement for ArF dry illumination, double patterning scheme, overlay controllability and pattern transfer process by reactive ion etching (RIE) will be discussed in this paper.

Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope

Abstract: We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphenes using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.

Nanoimprinted optical fibres: Biotemplated nanostructures for SERS sensing

Abstract: Nanoimprint lithography is used to pattern the endface of an optical fiber. A biological nanotemplate is replicated into polymer and coated with metal. Observed enhancement of through-fibre Raman scattering validates the approach.