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Lithography

About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.


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Journal ArticleDOI
27 Jan 2009-ACS Nano
TL;DR: A distinguishing feature of this technique is the use of a thin, sacrificial film to strip and transfer metallic nanopatterns and its ability to directly transfer metallic structures produced by conventional lithography.
Abstract: Conventional lithographic methods (e.g., electron-beam lithography, photolithography) are capable of producing high-resolution structures over large areas but are generally limited to large (>1 cm2) planar substrates. Incorporation of these features on unconventional substrates (i.e., small (<1 mm2) and/or non-planar substrates) would open possibilities for many applications, including remote fiber-based sensing, nanoscale optical lithography, three-dimensional fabrication, and integration of compact optical elements on fiber and semiconductor lasers. Here we introduce a simple method in which a thin thiol-ene film strips arbitrary nanoscale metallic features from one substrate and is then transferred, along with the attached features, to a substrate that would be difficult or impossible to pattern with conventional lithographic techniques. An oxygen plasma removes the sacrificial film, leaving behind the metallic features. The transfer of dense and sparse patterns of isolated and connected gold features ...

147 citations

Journal ArticleDOI
TL;DR: This work deposited neutral-aluminum atoms in thin parallel lines to form a grating with a line separation of 154.7 nm by using near-resonant laser light and direct-write optical lithography techniques, and analyzed the aluminum features with an atomic-force microscope.
Abstract: We deposited neutral-aluminum atoms in thin parallel lines to form a grating with a line separation of 154.7 nm by using near-resonant laser light and direct-write optical lithography techniques. We did this by using the single-frequency closed UV transition from the second ground state 3p2P3/2 (F = 4) to 3d2D5/2 (F = 5) at 309.4 nm. The aluminum features were analyzed with an atomic-force microscope.

146 citations

Journal ArticleDOI
TL;DR: In this article, the authors reported the quantitative characterization and analysis on the solidification of SU-8, a chemically amplified near-ultraviolet ultrathick resist, based on two-photon-absorbed (TPA) near-infrared photopolymerization.
Abstract: We report the quantitative characterization and analysis on the solidification of SU-8, a chemically amplified near-ultraviolet ultrathick resist, based on two-photon-absorbed (TPA) near-infrared photopolymerization. The resolution of TPA photopolymerized SU-8 voxels and lines is studied as a function of laser-pulse energy, single-shot exposure time, and scanning speed. Two-photon microstereolithography using SU-8 as the matrix material was verified by the fabrication of SU-8 photoplastic structures with subdiffraction-limit resolution. We show that the nonlinear velocity dependence of TPA photopolymerization can be used as the shutter mechanism for disruptive three-dimensional (3D) lithography. This mechanism, when combined with low numerical-aperture optics is exploited for the rapid 3D microfabrication of ultrahigh-aspect-ratio (up to 50:1) photoplastic pillars, planes, and cage structures.

146 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigate sub-10-nm light sources that could support extreme-ultraviolet (EUV) lithography at 13.5 nm, which is expected to be introduced in high-volume semiconductor chip production over the next three years.
Abstract: Extreme-ultraviolet (EUV) lithography at 13.5 nm is expected to be introduced in high-volume semiconductor chip production over the next three years. Research is now underway to investigate sub-10-nm light sources that could support lithography over the coming decades.

146 citations

Patent
25 Feb 2003
TL;DR: In this paper, the authors proposed contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications.
Abstract: The present invention is directed towards contact planarization methods that can be used to planarize substrate (32) surfaces having a wide range of topographic feature (34) densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces (38) over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.

146 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023546
20221,116
2021336
2020502
2019612
2018608