Topic
Lithography
About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.
Papers published on a yearly basis
Papers
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TL;DR: In this article, the potentials of ionbeam lithography using masks and focused ion beams are discussed. And an ionbeam-transmission mask is described, and results are presented showing 1X replicated mask patterns with 0.6μm features that were exposed in PMMA resist by irradiating the mask with a conventional size 150kV proton beam.
Abstract: Ion beams have increased usefulness for high‐resolution microstructure fabrication if they are patterned to small dimensions before they strike a target. First, results are presented of maskless micromachining, doping, and resist exposure with a scanning focused gallium ion beam of sub‐1000‐A diameter. Secondly, an ion‐beam‐transmission mask is described, and results are presented showing 1X replicated mask patterns with 0.6‐μm features that were exposed in PMMA resist by irradiating the mask with a conventional size 150‐kV proton beam. The potentials of ion‐beam lithography using masks and focused ion beams are discussed.
136 citations
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13 Jun 2005
TL;DR: Guided by the EPE map, effective RET-aware detailed routing (RADAR) techniques are developed that can handle full-chip capacity to enhance the overall printability while maintaining other design closure.
Abstract: This paper attempts to reconcile the growing interdependency between nanometer lithography and physical design. We first introduce the concept of lithography hotspots and the edge placement error (EPE) map to measure the overall printability and manufacturing effort. We then adapt fast lithography simulation models to generate EPE map. Guided by the EPE map, we develop effective RET-aware detailed routing (RADAR) techniques that can handle full-chip capacity to enhance the overall printability while maintaining other design closure. RADAR is implemented in an industry strength detailed router, and tested using some 65nm designs. Our experimental results show that we can achieve up to 40% EPE reduction with reasonable CPU time.
136 citations
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TL;DR: In this article, a single layer of polymethylmethacrylate (PMMA) was exposed by an approximately 2-nm−diam electron beam with energies ranging from 20 to 120 keV.
Abstract: Metal features with 10‐nm linewidths were produced on thick GaAs substrates using electron beam lithography. A single layer of polymethylmethacrylate (PMMA) was exposed by an approximately 2‐nm‐diam electron beam with energies ranging from 20 to 120 keV. Gold‐palladium lines less than 20 nm wide, and 15 nm thick, with center‐to‐center spacings of 70 nm, were produced over 15‐μm square fields at all electron beam energies by lift off. The exposure latitude increased significantly for higher electron energies, with 10‐nm‐wide metal lines formed using a 120‐keV writing beam.
136 citations
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TL;DR: Many technologies for resolution improvement and new optical image formation technologies such as phase shifting and focus latitude enhancement exposure (FLEX) are reviewed, and a future perspective on optical lithography is discussed.
Abstract: The development of optical lithography has promoted the development of ultralarge scale integration (ULSI) devices. However, optical lithography is now facing serious obstacles due to the limitations in wavelength. Higher resolution with sufficient depth of focus is the most important requirement for ULSI engineers. To satisfy this requirement, many technologies for resolution improvement and new optical image formation technologies such as phase shifting and focus latitude enhancement exposure (FLEX) are reviewed, and a future perspective on optical lithography is also discussed in this paper.
135 citations
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TL;DR: In this article, an angularly limiting filter is used to distinguish electrons that have traversed a transparent mask in terms of the degree of scattering between the patterned and unpatterned regions.
Abstract: We present a new approach to projection‐electron lithography which allows sub‐0.1 μm resolution to be achieved with short exposure times and a parallel illumination system. We have printed a grating pattern into PMMA with 0.1 μm linewidths. Our new technique consists of using an angularly limiting filter which differentiates electrons that have traversed a transparent mask in terms of the degree of scattering between the patterned and unpatterned regions.
135 citations