Topic
Lithography
About: Lithography is a research topic. Over the lifetime, 23507 publications have been published within this topic receiving 348321 citations.
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TL;DR: In this article, the method of nanosphere lithography was applied to fabricate arrays of nanometer-scale gold and cobalt particles, which were verified by magnetic force microscopy.
Abstract: We have applied the method of nanosphere lithography to fabricate arrays of nanometer-scale gold and cobalt particles. The individual cobalt particles were found to be in a single domain state as verified by magnetic force microscopy. By tuning the preparation conditions, we also successfully fabricated arrays of mesoscopic gold rings for the first time with potential application for persistent current experiments.
121 citations
TL;DR: In this article, an overview of the progress in thin film and surface physics involved in multilayered systems with nanometer scale periodicity is given, with special attention given to the development of thin diffusion barrier layers between the materials in the multilayers to enhance the optical contrast and to reduce the interdiffusion.
121 citations
Patent•
25 Apr 2009
TL;DR: In this article, a method of printing indicia on a substrate using a tip array comprising a compressible elastomeric polymer is described, which can be customized to have a tip of the number and arrangement to any desired.
Abstract: The present disclosure relates to a method of printing indicia on a substrate using a tip array comprising a compressible elastomeric polymer. The tip array can be fabricated using conventional photolithographic methods, it can be customized to have a tip of the number and / or arrangement to any desired. (E. G., More than 15,000 or more than 11 million), a number of reproductions of the pattern is short may be made in a manner parallel to within 40 minutes.
121 citations
120 citations
TL;DR: In this article, a Lloyd's mirror interferometer was used, reflecting part of an incident beam with a mirror at grazing incidence and letting it interfere with the direct beam at the wafer plane.
Abstract: Extreme ultraviolet (EUV, λ=13 nm) lithography is considered to be the most likely technology to follow ultraviolet (optical) lithography. One of the challenging aspects is the development of suitable resist materials and processes. This development requires the ability to produce high-resolution patterns. Until now, this ability has been severely limited by the lack of sources and imaging systems. We report printing of 38 nm period grating patterns by interferometric lithography technique with EUV light. A Lloyd’s Mirror interferometer was used, reflecting part of an incident beam with a mirror at grazing incidence and letting it interfere with the direct beam at the wafer plane. High-density fringes (38 nm pitch) were easily produced. Monochromatized light of 13 nm wavelength from an undulator in an electron storage ring provided the necessary temporal and spatial coherence along with sufficient intensity flux. This simple technique can be extended to sub-10 nm resolution.
120 citations